Apparatus and method for removing contaminants from semiconductor copper electroplating baths
    2.
    发明申请
    Apparatus and method for removing contaminants from semiconductor copper electroplating baths 失效
    从半导体铜电镀浴中去除污染物的设备和方法

    公开(公告)号:US20030150736A1

    公开(公告)日:2003-08-14

    申请号:US10074569

    申请日:2002-02-11

    发明人: Nicolay Kovarsky

    摘要: The present invention generally provides an apparatus and method for removing contaminants from a plating solution. The apparatus generally includes a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and an electrodialysis chamber in fluid communication with the electrolyte drain, wherein the electrodialysis chamber is generally configured to receive a portion of used electrolyte solution and remove contaminants therefrom. The method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with an electrodialysis cell.

    摘要翻译: 本发明通常提供一种从电镀液中除去污染物的装置和方法。 该设备通常包括具有电解质入口和电解液排泄物的电镀池,与电解质入口流体连通的电解质储存单元以及与电解液排出流体连通的电渗析室,其中电渗析室通常构造成接收 使用的电解质溶液的一部分并从其中除去污染物。 该方法通常包括向镀铜电池提供电解质溶液,用电解液将铜镀在电镀液中的基底上,从电镀槽中除去使用的电解质溶液,并用电渗析池刷新一部分使用的电解液 。