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    Non-linear quantization at pixel sensor
    5.
    发明授权
    Non-linear quantization at pixel sensor 有权

    公开(公告)号：US11943561B2

    公开(公告)日：2024-03-26

    申请号：US16896130

    申请日：2020-06-08

    申请人： Meta Platforms Technologies, LLC

    发明人： Tsung-Hsun Tsai ,  Xinqiao Liu

    IPC分类号： H04N25/533 ,  H04N25/71 ,  H04N25/75

    CPC分类号： H04N25/533 ,  H04N25/745 ,  H04N25/75

    摘要： In one example, an apparatus comprises: a photodiode to generate a charge in response to light within an exposure period having a first duration; a charge sensing unit to accumulate at least a part of the charge within the exposure period; a quantizer; and a controller to: determine, using the quantizer and within a measurement period having a second duration, whether a first quantity of the at least a part of the charge accumulated at the charge sensing unit exceeds a threshold, and a time it takes for the first quantity to exceed the threshold, wherein the first duration and the second duration are individually programmable; and based on whether the first quantity exceeds the threshold, output a first value representing the time or a second value representing a second quantity of the charge generated by the photodiode within the exposure period to represent an intensity of the light.

    IMAGE SENSOR AND OPERATION METHOD THEREOF
    7.
    发明公开
    IMAGE SENSOR AND OPERATION METHOD THEREOF 审中-公开

    公开(公告)号：US20240040276A1

    公开(公告)日：2024-02-01

    申请号：US18310750

    申请日：2023-05-02

    申请人： Samsung Electronics Co., Ltd.

    发明人： Eun Sub SHIM

    IPC分类号： H04N25/531 ,  H04N25/533 ,  H04N25/77

    CPC分类号： H04N25/531 ,  H04N25/533 ,  H04N25/77

    摘要： Disclosed is an image sensor including a plurality of first pixels arranged in a first row and configured to generate first charges in response to a first exposure and a plurality of second pixels arranged in a second row different from the first row and configured to generate second charges in response to a second exposure. At least one pixel of the plurality of first pixels includes a photo diode, a first floating diffusion, a first transfer transistor, a gate electrode of the first transfer transistor partially overlapping the first floating diffusion area when viewed in a horizontal direction, a second floating diffusion area spaced apart from the first floating diffusion area, one end of the second floating diffusion area being connected to a gate of a drive transistor, and a second transfer transistor that electrically connects the first floating diffusion area to the second floating diffusion area.