Masking methods for ALD processes for electrode-based devices
    4.
    发明申请
    Masking methods for ALD processes for electrode-based devices 有权
    用于基于电极的器件的ALD工艺的掩蔽方法

    公开(公告)号:US20170025272A1

    公开(公告)日:2017-01-26

    申请号:US15210095

    申请日:2016-07-14

    申请人: Ultratech, Inc.

    发明人: Ritwik Bhatia

    摘要: Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.

    摘要翻译: 公开了用于基于电极的器件的原子层沉积工艺的掩模方法,其中使用焊料作为掩模材料。 这些方法包括暴露具有有源器件区域和通过原子层沉积形成的势垒层的电气器件的电接触构件。 这包括在电接触构件上沉积焊料元素,然后使用原子层沉积形成阻挡层,其中阻挡层覆盖有源器件区域并且还覆盖分别覆盖电接触构件的焊料元件。 焊料元件然后被熔化,这消除了覆盖焊料元件的阻挡层的各个部分。 当形成层状电容器时,采用类似的方法来曝光接触。