公开(公告)号：US10090153B2

公开(公告)日：2018-10-02

申请号：US15598763

申请日：2017-05-18

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L21/02 ,  H01L21/268 ,  B23K26/12 ,  H01L29/20 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  C23C16/22 ,  B23K103/00

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170256394A1

公开(公告)日：2017-09-07

申请号：US15598763

申请日：2017-05-18

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/12 ,  B23K26/122 ,  H01L21/268 ,  H01L29/20

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170241019A1

公开(公告)日：2017-08-24

申请号：US15417896

申请日：2017-01-27

申请人： Ultratech, Inc.

发明人： Mark J. Sowa ,  Adam Bertuch ,  Ritwik Bhatia

IPC分类号： C23C16/455 ,  H01J37/32 ,  C23C16/505

CPC分类号： C23C16/45536 ,  C23C16/452 ,  C23C16/45553 ,  C23C16/505 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0228

摘要： Methods of performing PE-ALD on a substrate with reduced quartz-based contamination are disclosed. The methods include inductively forming in a quartz plasma tube a hydrogen-based plasma from a feed gas that consists essentially of either hydrogen and nitrogen or hydrogen, argon and nitrogen. The nitrogen constitutes 2 vol % or less of the feed gas. The hydrogen-based plasma includes one or more reactive species. The one or more reactive species in the hydrogen-based plasma are directed to the substrate to cause the one or more reactive species to react with a initial film on the substrate. The trace amounts of nitrogen serve to reduce the amount of quartz-based contamination in the initial film as compared to using no nitrogen in the feed gas.

公开(公告)号：US09691613B2

公开(公告)日：2017-06-27

申请号：US14899552

申请日：2014-06-25

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/04 ,  H01L21/02 ,  C23C16/22 ,  H01L29/20 ,  H01L21/268 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  B23K26/12 ,  B23K103/00

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US09633850B2

公开(公告)日：2017-04-25

申请号：US15210095

申请日：2016-07-14

申请人： Ultratech, Inc.

发明人： Ritwik Bhatia

IPC分类号： H01L21/033 ,  H01L23/00 ,  H01L49/02 ,  H01G9/00 ,  H01G9/045 ,  H01G9/04

CPC分类号： H01L21/0331 ,  H01G4/0085 ,  H01G9/0029 ,  H01G9/045 ,  H01G2009/0408 ,  H01L24/03 ,  H01L28/40 ,  H01L28/60 ,  H01L2224/03472 ,  H01L2924/014 ,  H01L2924/1205

摘要： Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.

公开(公告)号：US09768016B2

公开(公告)日：2017-09-19

申请号：US14899552

申请日：2014-06-25

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/04 ,  H01L21/02 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  B23K26/12 ,  C23C16/22 ,  C23C16/56 ,  H01L21/268 ,  H01L21/324 ,  H01L29/20 ,  B23K103/00

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170025272A1

公开(公告)日：2017-01-26

申请号：US15210095

申请日：2016-07-14

申请人： Ultratech, Inc.

发明人： Ritwik Bhatia

IPC分类号： H01L21/033 ,  H01G9/045 ,  H01G9/00 ,  H01L23/00 ,  H01L49/02

CPC分类号： H01L21/0331 ,  H01G4/0085 ,  H01G9/0029 ,  H01G9/045 ,  H01G2009/0408 ,  H01L24/03 ,  H01L28/40 ,  H01L28/60 ,  H01L2224/03472 ,  H01L2924/014 ,  H01L2924/1205

摘要： Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the electrical contact members, then forming the barrier layer using atomic layer deposition, wherein the barrier layer covers the active device region and also covers the solder elements that respectively cover the electrical contact members. The solder elements are then melted, which removes respective portions of the barrier layer covering the solder elements. Similar methods are employed for exposing contacts when forming layered capacitors.

摘要翻译： 公开了用于基于电极的器件的原子层沉积工艺的掩模方法，其中使用焊料作为掩模材料。 这些方法包括暴露具有有源器件区域和通过原子层沉积形成的势垒层的电气器件的电接触构件。 这包括在电接触构件上沉积焊料元素，然后使用原子层沉积形成阻挡层，其中阻挡层覆盖有源器件区域并且还覆盖分别覆盖电接触构件的焊料元件。 焊料元件然后被熔化，这消除了覆盖焊料元件的阻挡层的各个部分。 当形成层状电容器时，采用类似的方法来曝光接触。

公开(公告)号：US09929011B2

公开(公告)日：2018-03-27

申请号：US15597680

申请日：2017-05-17

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L21/02 ,  H01L21/268 ,  B23K26/12 ,  H01L29/20 ,  B23K26/03 ,  B23K26/073 ,  B23K26/122 ,  C23C16/56 ,  H01L21/324 ,  C23C16/22 ,  B23K103/00

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20170250070A1

公开(公告)日：2017-08-31

申请号：US15597680

申请日：2017-05-17

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/02 ,  B23K26/12 ,  B23K26/122 ,  B23K26/03 ,  B23K26/073 ,  H01L21/268 ,  H01L29/20

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

公开(公告)号：US20160155629A1

公开(公告)日：2016-06-02

申请号：US14899552

申请日：2014-06-25

申请人： Ultratech, Inc.

发明人： Andrew M. Hawryluk ,  Ganesh Sundaram ,  Ritwik Bhatia

IPC分类号： H01L21/02 ,  C23C16/56 ,  H01L21/324

CPC分类号： H01L21/0262 ,  B23K26/034 ,  B23K26/0738 ,  B23K26/122 ,  B23K26/1224 ,  B23K2103/56 ,  C23C16/22 ,  C23C16/56 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/02675 ,  H01L21/02694 ,  H01L21/268 ,  H01L21/3245 ,  H01L29/2003

摘要： Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550° C. and preferable below 350° C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500° C. for less than 12 msec.

摘要翻译： 公开了通过使用原子层沉积（ALD）在硅衬底上生长氮化镓层，然后快速热退火来制造氮化镓器件的装置制造方法和装置。 氮化镓直接生长在硅或硅衬底上生长的氮化铝阻挡层上。 通过快速热退火对一层或两层进行热处理。 优选地，ALD方法使用低于550℃的反应温度，并且优选低于350℃。快速热退火步骤将涂层表面的温度升高至550至1500℃的温度小于12毫秒。