Wide-swing intrinsic MOSFET cascode current mirror

    公开(公告)号:US11966247B1

    公开(公告)日:2024-04-23

    申请号:US18160536

    申请日:2023-01-27

    Inventor: Rogelio Cicili

    CPC classification number: G05F3/262 G05F3/205

    Abstract: Methods and devices for a wide-swing cascode current mirror with low headroom voltage and high output impedance are presented. An input leg of the current mirror includes a composite transistor in series connection with an intrinsic transistor. The composite transistor includes two series-connected regular transistors with respective sizes that are twice the size of the intrinsic transistor. An output leg of the current mirror includes a regular transistor in series connection with an intrinsic transistor. A gate voltage of the composite transistor, provided at a node that is common to gates of the two series-connected regular transistors, self-establishes when a reference current flows through the input leg. The self-established gate voltage is used to bias the regular transistor of the output leg. Biasing voltages to gates of the intrinsic transistors is provided by an intermediate node that provides the series connection of the regular transistors of the composite transistor.

    SEMICONDUCTOR DEVICE, SENSOR TERMINAL, AND SEMICONDUCTOR DEVICE CONTROL METHOD

    公开(公告)号:US20190187737A1

    公开(公告)日:2019-06-20

    申请号:US16173576

    申请日:2018-10-29

    Abstract: There is a need to ensure operations at a predetermined operating frequency when a temperature changes in an operating state. A semiconductor device includes: a bias-applied portion applied with a substrate bias; a temperature sensor to detect a temperature; and a substrate bias generator to apply the bias-applied portion with a substrate bias corresponding to the temperature detected by the temperature sensor. The bias-applied portion, while applied with a substrate bias by the substrate bias generator, shifts between an operating state and a stopped state. The substrate bias generator applies the bias-applied portion with a substrate bias configured so as not to cause an upper limit of an operating frequency for the bias-applied portion to be smaller than a predetermined value under condition of the temperature detected by the temperature sensor.

    Charge pump circuit and voltage generating device including the same

    公开(公告)号:US10044260B2

    公开(公告)日:2018-08-07

    申请号:US15665493

    申请日:2017-08-01

    Applicant: Sk hynix Inc.

    Inventor: Chung-Hun Jeon

    Abstract: A charge pump circuit may include: input units suitable for receiving a first input pulse signals and outputting second input pulse signals that are out of phase; an internal voltage generation unit suitable for generating an internal voltage by performing a voltage pumping operation in response to an external voltage and the second input pulse signals, and adjusting a well bias voltage at a power-up period and a normal operation period after the power-up period, in response to a switching control signal; and a switching control signal generation unit suitable for generating the switching control signal which is activated differently on the power-up period and the normal operation period.

    CHARGE PUMP CIRCUIT AND VOLTAGE GENERATING DEVICE INCLUDING THE SAME

    公开(公告)号:US20180183328A1

    公开(公告)日:2018-06-28

    申请号:US15665493

    申请日:2017-08-01

    Applicant: SK hynix Inc.

    Inventor: Chung-Hun JEON

    Abstract: A charge pump circuit may include: input units suitable for receiving a first input pulse signals and outputting second input pulse signals that are out of phase; an internal voltage generation unit suitable for generating an internal voltage by performing a voltage pumping operation in response to an external voltage and the second input pulse signals, and adjusting a well bias voltage at a power-up period and a normal operation period after the power-up period, in response to a switching control signal; and a switching control signal generation unit suitable for generating the switching control signal which is activated differently on the power-up period and the normal operation period.

    Reference Voltage Generator System
    10.
    发明申请

    公开(公告)号:US20180059703A1

    公开(公告)日:2018-03-01

    申请号:US15805904

    申请日:2017-11-07

    CPC classification number: G05F3/02 G05F3/205 G05F3/225 G05F3/30

    Abstract: One example includes a reference voltage generator system. The system includes an amplifier configured to generate a reference voltage based on a respective input voltage provided at each of at least one input of the amplifier. The system also includes at least one input transistor that is coupled to the at least one input of the amplifier and is statically-biased to conduct a current to set an amplitude of the respective input voltage provided at each of the at least one input of the amplifier. Each of the at least one input transistor includes an input terminal that is coupled in series with an input resistor.

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