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公开(公告)号：US07809965B2
公开(公告)日：2010-10-05
申请号：US12133729
申请日：2008-06-05
申请人： Gregory P. Ziarnik , Mark D. Tupa
发明人： Gregory P. Ziarnik , Mark D. Tupa
IPC分类号： G05D16/00
CPC分类号： H05K7/20209 , G05D23/1906 , G05D23/26 , G06F1/206
摘要： A computer system including a processor and a fan. The computer system can determine a power usage of the computer system and throttle the processor if the power usage corresponds to operating the fan at an increased acoustic level. The processor is throttled to cool the computer system prior to operating the fan at the increased acoustic level.
摘要翻译： 包括处理器和风扇的计算机系统。 如果电力使用对应于以增加的声级操作风扇，则计算机系统可以确定计算机系统的电力使用并节流处理器。 在增加声级操作风扇之前，处理器被节流以冷却计算机系统。
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2.发明授权Use of miniature magnetic sensors for real-time control of the induction heating process 有权使用微型磁传感器实时控制感应加热过程公开(公告)号：US06455825B1
公开(公告)日：2002-09-24
申请号：US09718289
申请日：2000-11-21
IPC分类号： H05B608
摘要： A method of monitoring the process of induction heating a workpiece. A miniature magnetic sensor located near the outer surface of the workpiece measures changes in the surface magnetic field caused by changes in the magnetic properties of the workpiece as it heats up during induction heating (or cools down during quenching). A passive miniature magnetic sensor detects a distinct magnetic spike that appears when the saturation field, Bsat, of the workpiece has been exceeded. This distinct magnetic spike disappears when the workpiece's surface temperature exceeds its Curie temperature, due to the sudden decrease in its magnetic permeability. Alternatively, an active magnetic sensor can also be used to measure changes in the resonance response of the monitor coil when the excitation coil is linearly swept over 0-10 MHz, due to changes in the magnetic permeability and electrical resistivity of the workpiece as its temperature increases (or decreases).
摘要翻译： 一种监测感应加热工件过程的方法。 位于工件外表面附近的小型磁传感器测量在感应加热期间加热时（或淬火期间冷却）时工件的磁特性变化引起的表面磁场变化。 被动微型磁传感器检测到超过工件的饱和场Bsat时出现的不同磁尖。 由于其导磁率的突然下降，当工件的表面温度超过其居里温度时，这种不同的磁尖消失。 或者，主动磁传感器也可用于测量当激励线圈线性扫描超过0-10MHz时监测线圈的谐振响应的变化，这是由于工件的导磁率和电阻率随其温度的变化 增加（或减少）。
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3.发明授权
公开(公告)号：US5783804A
公开(公告)日：1998-07-21
申请号：US813368
申请日：1997-03-07
CPC分类号： G05D23/27 , G01K11/14 , G03F7/70616 , G05D23/1919 , G05D23/26 , H01L22/12
摘要： A nondestructive product level calibration method which is based on reflectance of intensity of UV and visible light that is measured from the top surface of a semiconductor wafer in a RTP closed loop process control environment in which the temperature of the wafer is regulated as a function of reflectivity of radiation at a preselected wavelength from the top surface of the wafer. In the method, sheet resistance of the wafer is measured as a function of the intensity of the UV and IR light directed at the wafer over a predetermined temperature and time range. Then, the reflectance intensity off wafer is measured to develop a model of the top surface. The reflectance model will indicate a wavelength where the reflectance is the greatest. Next, the wafer is subjected to UV radiation at the most sensitive wavelength and the reflectance is plotted against intensity of heat treatment. Then, notice is taken that the reflectance detected directly corresponds to a ratio of temperature over time measured in the first step. Thus, the reflectance at a particular wavelength of UV light corresponds to a specific and discrete temperature so that the degree of heat treatment to which the wafer has been exposed is known.
摘要翻译： 一种非破坏性的产品水平校准方法，其基于在封闭环路过程控制环境中从半导体晶片的顶表面测量的UV和可见光强度的反射率，其中晶片的温度被调节为 来自晶片顶表面的预选波长的辐射的反射率。 在该方法中，测量晶片的薄层电阻作为在预定温度和时间范围内指向晶片的UV和IR光的强度的函数。 然后，测量离开晶片的反射率强度，以形成顶表面的模型。 反射率模型将表示反射率最大的波长。 接下来，晶片经受最敏感波长的紫外线辐射，反射率相对于热处理强度作图。 然后，注意到直接检测到的反射率对应于在第一步中测量的随时间的温度比。 因此，UV光的特定波长处的反射率对应于特定和离散的温度，使得已经暴露了晶片的热处理程度是已知的。
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4.发明授权Reflectance method for accurate process calibration in semiconductor wafer heat treatment 失效半导体晶片热处理中精确工艺校准的反射方法
公开(公告)号：US5618461A
公开(公告)日：1997-04-08
申请号：US346764
申请日：1994-11-30
CPC分类号： G05D23/27 , G01K11/14 , G03F7/70616 , G05D23/1919 , G05D23/26 , H01L22/12
摘要： A nondestructive product level calibration method which is based on reflectance of intensity of UV and visible light that is measured from the top surface of a semiconductor wafer in a RTP closed loop process control environment in which the temperature of the wafer is regulated as a function of reflectivity of radiation at a preselected wavelength from the top surface of the wafer. In the method, sheet resistance of the wafer is measured as a function of the intensity of the UV and IR light directed at the wafer over a predetermined temperature and time range. Then, the reflectance intensity off wafer is measured to develop a model of the top surface. The reflectance model will indicate a wavelength where the reflectance is the greatest. Next, the wafer is subjected to UV radiation at the most sensitive wavelength and the reflectance is plotted against intensity of heat treatment. Then, notice is taken that the reflectance detected directly corresponds to a ratio of temperature over time measured in the first step. Thus, the reflectance at a particular wavelength of UV light corresponds to a specific and discrete temperature so that the degree of heat treatment to which the wafer has been exposed is known.
摘要翻译： 一种非破坏性的产品水平校准方法，其基于在封闭环路过程控制环境中从半导体晶片的顶表面测量的UV和可见光强度的反射率，其中晶片的温度被调节为 来自晶片顶表面的预选波长的辐射的反射率。 在该方法中，测量晶片的薄层电阻作为在预定温度和时间范围内指向晶片的UV和IR光的强度的函数。 然后，测量离开晶片的反射率强度，以形成顶表面的模型。 反射率模型将表示反射率最大的波长。 接下来，晶片经受最敏感波长的紫外线辐射，反射率相对于热处理强度作图。 然后，注意到直接检测到的反射率对应于在第一步中测量的随时间的温度比。 因此，UV光的特定波长处的反射率对应于特定和离散的温度，使得已经暴露了晶片的热处理程度是已知的。
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公开(公告)号：US5149929A
公开(公告)日：1992-09-22
申请号：US677246
申请日：1991-03-29
摘要： A microwave oven with an invertor control power source produces a microwave by the use of the magnetron in relation to the high frequency power generated by the invertor control power source. The heat sensitive ferreit beads provided on the lead wire for transmitting the high frequency power to the magnetron changes the inductance of the wire from the high level to the low level at around a threshold temperature lower than the working equilibrium temperature of the magnetron. The cathode filament current remains within the allowable range, and the moding of the magnetron is prevented. The magnetron can operate in a long life time.
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公开(公告)号：US4769519A
公开(公告)日：1988-09-06
申请号：US3288
申请日：1987-01-14
申请人： William D. Hall
发明人： William D. Hall
CPC分类号： H05B6/06 , G05D23/26 , H05B3/0023
摘要： A ferromagnetic element has current passed through it either by direct electrical connections or by induction. The current through the ferromagnetic element may be far greater than is necessary to heat the element above its effective Curie temperature. As the element is heated and is passing through its effective Curie transition (that is its temperature is rising from below its effective Curie temperature to, or above, its effective Curie temperature) the change in permeability of the element is sensed and the current through the element is cut off. The element then cools. When the temperature falls below the effective Curie temperature, the full current is restored. The heating and cooling process repeats itself indefinitely. The result is that the element is maintained at its effective Curie by a pulsating current fed to the element. The Curie transition may be sensed by directly sensing changes in permeability as by an auto-transformer winding, on the element; or by sensing changes in the power to the element by reason of the change in resistance of the element as it passes through the effective Curie temperature.
摘要翻译： 铁磁元件的电流通过直接电连接或通过感应通过。 通过铁磁元件的电流可能远大于将元件加热到高于其有效居里温度所需的电流。 当元件被加热并且通过其有效居里转变（即其温度从低于其有效居里温度升高到或高于其有效居里温度）时，元件的磁导率的变化被感测并且通过 元素被切断。 然后元素冷却。 当温度低于有效居里温度时，恢复全电流。 加热和冷却过程无限期地重复。 结果是通过馈送到元件的脉动电流将元件保持在其有效居里。 可以通过在元件上直接感测通过自动变压器绕组的磁导率变化来感测居里转变; 或者通过感测元件在通过有效居里温度时的电阻的变化来检测元件的功率的变化。
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公开(公告)号：US3917970A
公开(公告)日：1975-11-04
申请号：US53547574
申请日：1974-12-23
申请人： ILLINOIS TOOL WORKS
发明人： SIDOR EDWARD F , EIKELBERGER RAND J
CPC分类号： G01K7/38 , G01K3/005 , G05D23/1906 , G05D23/26 , Y10T307/773
摘要： A temperature sensor is disclosed which produces an electrical output signal when a predetermined high temperature is reached and which maintains that signal until the temperature has fallen to a predetermined low temperature so as to achieve temperature hysteresis. The sensor includes two magnetic cores which are wound with wires to form inductances. The cores are constructed of different material so that their transition points occur at different temperatures. Sensors are disclosed which include circuitry that sense the change of state of the high temperature core at its transition temperature when the temperature is increased to the high predetermined temperature, and the change of state of the low temperature coil at its transition temperature when the temperature is decreased to the low predetermined temperature.
摘要翻译： 公开了一种温度传感器，其在达到预定的高温时产生电输出信号，并且维持该信号直到温度已经下降到预定的低温以达到温度滞后。 传感器包括两根磁芯，它们用线缠绕以形成电感。 芯由不同的材料构成，使得它们的转变点在不同的温度下发生。 公开了传感器，其包括当温度升高到高预定温度时感测高温芯在其转变温度下的状态变化的电路，以及当温度为温度时低温线圈在其转变温度下的状态变化 降低到低预定温度。
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8.发明授权
公开(公告)号：US3328561A
公开(公告)日：1967-06-27
申请号：US31974863
申请日：1963-10-29
发明人： TATSUO SAKAMOTO , YOSHIAKI SANO
CPC分类号： A47J27/62 , A47J27/004 , G05D23/26 , H01H37/58 , H05B3/68
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公开(公告)号：US20150160144A1
公开(公告)日：2015-06-11
申请号：US14626415
申请日：2015-02-19
申请人： Jentek Sensors, Inc.
发明人： Neil J. Goldfine , Vladimir A. Zilberstein , Ian C. Shay , Christopher A. Craven , David C. Grundy , Volker Weiss , Andrew P. Washabaugh
CPC分类号： G01N27/02 , G01N19/00 , G01N25/00 , G01N27/60 , G01N27/72 , G05D23/1931 , G05D23/22 , G05D23/24 , G05D23/26
摘要： The condition of internal or hidden material layers or interfaces is monitored and used for control of a process that changes a condition of a material system. The material system has multiple component materials, such as layers or embedded constituents, or can be represented with multiple layers to model spatial distributions in the material properties. The material condition changes as a result of a process performed on the material, such as by cold working, or from functional operation. Sensors placed proximate to the test material surface or embedded between material layers are used to monitor a material property using magnetic, electric, or thermal interrogation fields. The sensor responses are converted into states of the material condition, such as temperature or residual stress, typically with a precomputed database of sensor responses. The sensor responses can also be used to determine properties of the test material, such as electrical conductivity or magnetic permeability, prior to conversion to the material state. The states are used to support control decisions that control the process or operation causing the material condition to change.
摘要翻译： 监控内部或隐藏的材料层或界面的状况，并用于控制改变材料系统状态的过程。 材料系统具有多种组分材料，例如层或嵌入组分，或者可以用多层来表示材料性质中的空间分布。 材料状态由于通过冷加工或功能操作在材料上进行的过程而改变。 使用放置在测试材料表面附近或嵌入材料层之间的传感器用于使用磁，电或热询问场监测材料特性。 传感器响应被转换为材料状态的状态，例如温度或残余应力，通常具有传感器响应的预计算数据库。 在转换到材料状态之前，传感器响应也可用于确定测试材料的性质，例如导电性或磁导率。 这些状态用于支持控制过程或操作的控制决策，从而导致材料状况发生变化。
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公开(公告)号：US08266461B2
公开(公告)日：2012-09-11
申请号：US12869729
申请日：2010-08-26
申请人： Gregory P. Ziarnik , Mark D. Tupa
发明人： Gregory P. Ziarnik , Mark D. Tupa
IPC分类号： G05D16/00
CPC分类号： H05K7/20209 , G05D23/1906 , G05D23/26 , G06F1/206
摘要： A computer system includes a processor and a fan operative to provide cooling airflow for reducing a temperature of the processor, the fan having a temperature threshold corresponding to operation of the fan at a speed greater than low speed. The computer system also includes a temperature-monitoring unit selectively operative in one of a reduced-acoustic mode and a normal-acoustic mode such that in the normal-acoustic mode, the temperature-monitoring unit attempts to control the temperature of the computer system by adjusting the speed of the fan and in the reduced-acoustic mode, the temperature-monitoring unit attempts to control the temperature of the computer system by throttling the processor.
摘要翻译： 计算机系统包括处理器和风扇，其可操作以提供用于降低处理器温度的冷却气流，所述风扇具有对应于大于低速的速度的风扇的操作的温度阈值。 计算机系统还包括温度监视单元，其选择性地以降声模式和正常声模式之一操作，使得在正常声学模式中，温度监测单元试图通过以下方式控制计算机系统的温度 调节风扇的速度，在减声模式下，温度监控单元试图通过调节处理器来控制计算机系统的温度。
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