Temperature sensor
    8.
    发明授权
    Temperature sensor 有权
    温度感应器

    公开(公告)号:US08449180B2

    公开(公告)日:2013-05-28

    申请号:US12161760

    申请日:2007-01-19

    CPC classification number: G01K7/22 G01K7/40

    Abstract: This invention is to provide a temperature sensor which can measure a precise temperature of a minute region, which can measure a temperature in a wide range from a low temperature to a high temperature, and which has a simple structure. The temperature sensor comprises a two-dimensional electron gas. A resistance of the two-dimensional electron gas is used to measure a temperature. The two-dimensional electron gas may have a heterostructure selected from the group consisting of an AlGaN/GaN system, an AlGaAs/GaAs system, an InAs/GaAs system, an InAs/GaSb/AlSb system, a SiGe/Si system, a SiC/Si system, a CdTe/HgTe/CdTe system, an InGaAs/InAlAs/InP system, and nanocrystalline silicon.

    Abstract translation: 本发明提供一种温度传感器,其可以测量微区域的精确温度,其可以测量从低温到高温的宽范围内的温度,并且具有简单的结构。 温度传感器包括二维电子气。 使用二维电子气的电阻来测量温度。 二维电子气体可以具有选自AlGaN / GaN系统,AlGaAs / GaAs系统,InAs / GaAs系统,InAs / GaSb / AlSb系统,SiGe / Si系统,SiC / Si系统,CdTe / HgTe / CdTe系统,InGaAs / InAlAs / InP系统和纳米晶硅。

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