公开(公告)号：US09777395B2

公开(公告)日：2017-10-03

申请号：US14418820

申请日：2014-06-05

Applicant: LG Siltron Inc.

Inventor： Su-In Jeon

IPC: C30B15/20 ,  C30B29/06 ,  C30B15/14 ,  C30B15/26

CPC classification number: C30B15/206 ,  C30B15/14 ,  C30B15/26 ,  C30B29/06

Abstract: An apparatus for growing a silicon single crystal according to embodiments includes a chamber including a crucible accommodating silicon melt; a support shaft rotating and lifting the crucible while supporting the crucible; a main heater part for applying heat to the crucible side, the heater disposed beside the crucible; an upper heat insulation member located over the crucible; and upper heater parts located at a lower end portion of the upper heat insulation member, wherein the upper heater parts have diameters different from each other with respect to a center of the crucible, and include a plurality of ring-shaped heaters which are spaced apart from each other. Due to the individually controllable upper heater parts, a uniform thermal environment can be provided for silicon melt accommodated in a crucible, and localized solidification of the silicon melt can be prevented so that the quality of a silicon single crystal and the ingot pulling speed can be readily controlled.

公开(公告)号：US09592584B2

公开(公告)日：2017-03-14

申请号：US14761930

申请日：2014-01-20

Applicant: LG SILTRON INC.

Inventor： Dae-Hoon Kim

IPC: B24B37/08 ,  H01L21/67 ,  B24B37/16

CPC classification number: B24B37/08 ,  B24B37/16 ,  H01L21/67092

Abstract: An embodiment of the present invention provides a surface plate provided at a wafer double-side grinding device for grinding a wafer. The surface plate includes a plurality of first surface plate grooves formed in a first direction, and a plurality of second surface plate grooves formed in a second direction different from the first direction. The first surface plate grooves and the second surface plate grooves have first and second surface plate groove portions arranged therein, the first and second surface plate groove portions having steps formed in a direction toward the center or an outer periphery of a lower surface plate.

Abstract translation: 本发明的一个实施例提供一种设置在用于研磨晶片的晶片双面研磨装置上的表面板。 表面板包括沿第一方向形成的多个第一表面板槽和沿与第一方向不同的第二方向形成的多个第二表面板槽。 第一表面板槽和第二表面板槽具有布置在其中的第一和第二表面板槽部分，第一和第二表面板槽部分沿着朝向下表面板的中心或外周的方向形成。

公开(公告)号：US09085092B2

公开(公告)日：2015-07-21

申请号：US13821618

申请日：2012-02-23

Applicant: Dae Hyun Jeon

Inventor： Dae Hyun Jeon

IPC: B28D5/04 ,  B28D5/00

CPC classification number: B28D5/045 ,  B28D5/007 ,  Y02P70/179

Abstract: Provided is an apparatus for slicing an ingot. The apparatus for slicing the ingot includes a mounting part on which the ingot is mounted, a wire saw disposed under the mounting part, a slurry supply part supplying slurry from an upper side of the wire saw, and a slurry blocking part disposed on the mounting part. The slurry blocking part includes a fixing part coupled to one side of the mounting part and a slurry collection part to which a central portion thereof is coupled to a lower portion of the fixing part.

Abstract translation: 提供了一种用于切割锭的装置。 用于切割锭的装置包括安装铸锭的安装部件，设置在安装部下方的线锯，从线锯的上侧供给浆料的浆料供给部和设置在该安装部上的浆料阻挡部 部分。 浆料阻挡部分包括连接到安装部分的一侧的固定部分和浆料收集部分，其中心部分连接到固定部分的下部。

公开(公告)号：US08574033B2

公开(公告)日：2013-11-05

申请号：US12899131

申请日：2010-10-06

Applicant: Jae Chel Sung

Inventor： Jae Chel Sung

IPC: B24B1/00

CPC classification number: B24B37/32

Abstract: Disclosed is a wafer support member including a base substrate, a support adhered at a predetermined width to the edge of the base substrate, the support having a round outermost part, and a coating layer provided on the outermost edge of the support.

Abstract translation: 公开了一种晶片支撑构件，其包括基底基板，以基本基板的边缘以预定宽度附着的支撑件，支撑件具有圆形最外部分，以及设置在支撑体的最外边缘上的涂层。

公开(公告)号：US08414360B2

公开(公告)日：2013-04-09

申请号：US12700362

申请日：2010-02-04

Applicant: Chi-Bok Lee ,  Heui-Don Cho

Inventor： Chi-Bok Lee ,  Heui-Don Cho

IPC: B24B7/17 ,  B24B41/06

CPC classification number: B24B37/08 ,  B24B37/28

Abstract: A double side polishing apparatus comprises an upper polishing plate and a lower polishing plate for polishing both sides of a wafer; a plurality of carriers, each including a center plate and a circumferential plate, the center plate having a mounting hole where the wafer is mounted, the circumferential plate having a fitting hole where the center plate is fitted and a gear part formed along the outer periphery thereof, the center of the mounting hole being eccentric from the center of the center plate, the center of the fitting hole being eccentric from the center of the circumferential plate; and a sun gear and an internal gear engaged with the gear part to transmit a rotational force to the plurality of carriers, wherein a fitting direction of a center plate into a fitting hole is adjustable for at least two carriers among the plurality of carriers.

Abstract translation: 双面抛光装置包括用于抛光晶片两侧的上抛光板和下抛光板; 多个载体，每个载体包括中心板和周向板，所述中心板具有安装所述晶片的安装孔，所述圆周板具有装配所述中心板的嵌合孔和沿着所述外周形成的齿轮部分 安装孔的中心偏离中心板的中心，装配孔的中心偏离圆周板的中心; 以及太阳齿轮和内齿轮，与所述齿轮部分接合以向所述多个载体传递旋转力，其中，所述多个载体中的至少两个载体的中心板的装配方向可调整到装配孔中。

公开(公告)号：US08216372B2

公开(公告)日：2012-07-10

申请号：US11352917

申请日：2006-02-13

Applicant: Hyon-Jong Cho

Inventor： Hyon-Jong Cho

IPC: C30B35/00

CPC classification number: C30B29/06 ,  C30B15/14 ,  C30B35/00 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/1088

Abstract: The invention relates to an apparatus and method for growing a high quality Si single crystal ingot and a Si single crystal ingot and wafer produced thereby. The growth apparatus controls the oxygen concentration of the Si single crystal ingot to various values thereby producing the Si single crystal ingot with high productivity and extremely controlled growth defects.

Abstract translation: 本发明涉及一种用于生长由其制造的高质量Si单晶锭和Si单晶锭及其晶片的装置和方法。 生长装置将Si单晶锭的氧浓度控制在各种值，从而以高生产率和极其可控的生长缺陷生产Si单晶锭。

公开(公告)号：US08138003B2

公开(公告)日：2012-03-20

申请号：US13031425

申请日：2011-02-21

Applicant: Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

Inventor： Doo-Soo Kim ,  Ho-Jun Lee ,  Yong-Jin Kim ,  Dong-Kun Lee

IPC: H01L21/00

CPC classification number: H01L21/02658 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/0254

Abstract: The present invention relates to a nitride semiconductor substrate such as gallium nitride substrate and a method for manufacturing the same. The present invention forms a plurality of trenches on a lower surface of a base substrate that are configured to absorb or reduce stresses applied larger when growing a nitride semiconductor film on the base substrate from a central portion of the base substrate towards a peripheral portion. That is, the present invention forms the trenches on the lower surface of the base substrate such that pitches get smaller or widths or depths get larger from the central portion of the base substrate towards the peripheral portion.

Abstract translation: 氮化镓半导体衬底及其制造方法技术领域本发明涉及氮化镓衬底等氮化物半导体衬底及其制造方法。 本发明在基底基板的下表面上形成多个沟槽，该多个沟槽被配置为当从基底基板的中心部分向周边部分生长氮化物半导体膜时，吸收或减小施加更大的应力。 也就是说，本发明在基底基板的下表面上形成沟槽，使得间距变得较小，或者宽度或深度从基底基板的中心部朝向周边部分变大。

公开(公告)号：US08124497B2

公开(公告)日：2012-02-28

申请号：US12955222

申请日：2010-11-29

Applicant: Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

Inventor： Yong-Jin Kim ,  Dong-Kun Lee ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Kye-Jin Lee

IPC: H01L21/762

CPC classification number: H01L21/0254 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079

Abstract: A method of manufacturing a nitride semiconductor device is disclosed. The method includes forming a gallium nitride (GaN) epitaxial layer on a first support substrate, forming a second support substrate on the GaN epitaxial layer, forming a passivation layer on a surface of the other region except for the first support substrate, etching the first support substrate by using the passivation layer as a mask, and removing the passivation layer and thereby exposing the second support substrate and the GaN epitaxial layer.

Abstract translation: 公开了一种制造氮化物半导体器件的方法。 该方法包括在第一支撑衬底上形成氮化镓（GaN）外延层，在GaN外延层上形成第二支撑衬底，在除第一支撑衬底之外的另一个区域的表面上形成钝化层，蚀刻第一衬底 通过使用钝化层作为掩模来支撑衬底，以及去除钝化层，从而暴露第二支撑衬底和GaN外延层。

公开(公告)号：US20110092055A1

公开(公告)日：2011-04-21

申请号：US12967897

申请日：2010-12-14

Applicant: Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

Inventor： Yong-Jin Kim ,  Doo-Soo Kim ,  Ho-Jun Lee ,  Dong-Kun Lee

IPC: H01L21/20

CPC classification number: H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/20 ,  H01L33/38

Abstract: The present invention relates to a compound semiconductor substrate and a method for manufacturing the same. The present invention provides the manufacturing method which coats spherical balls on a substrate, forms a metal layer between the spherical balls, removes the spherical balls to form openings, and grows a compound semiconductor layer from the openings. According to the present invention, the manufacturing method can be simplified and grow a high quality compound semiconductor layer rapidly, simply and inexpensively, as compared with a conventional ELO (Epitaxial Lateral Overgrowth) method or a method for forming a compound semiconductor layer on a metal layer. And, the metal layer serves as one electrode of a light emitting device and a light reflecting film to provide a light emitting device having reduced power consumption and high light emitting efficiency.

Abstract translation: 化合物半导体基板及其制造方法技术领域本发明涉及化合物半导体基板及其制造方法。 本发明提供一种制造方法，其在基板上涂布球形球，在球形球之间形成金属层，去除球形球以形成开口，并从开口生长化合物半导体层。 根据本发明，与传统的ELO（外延横向生长）方法或在金属上形成化合物半导体层的方法相比，可以简化和简单且廉价地生产高质量的化合物半导体层 层。 并且，金属层用作发光器件和光反射膜的一个电极，以提供具有降低的功率消耗和高发光效率的发光器件。

公开(公告)号：US07906408B2

公开(公告)日：2011-03-15

申请号：US12195229

申请日：2008-08-20

Applicant: In Kyum Kim ,  Suk June Kang ,  Hyung Sang Yuk

Inventor： In Kyum Kim ,  Suk June Kang ,  Hyung Sang Yuk

IPC: H01L21/30

CPC classification number: H01L21/76254

Abstract: Provided is a method of manufacturing a strained silicon-on-insulator (SSOI) substrate that can manufacture an SSOI substrate by separating a bonded substrate using a low temperature heat treatment. The manufacturing method includes: providing a substrate; growing silicon germanium (SiGe) on the substrate to thereby form a SiGe layer; growing silicon (Si) with a lattice constant less than a lattice constant of SiGe on the SiGe layer to thereby form a transformed Si layer; and implanting ions on the surface of the transformed Si layer, wherein, while growing of the SiGe layer, the SiGe layer is doped with impurity at a depth the ions are to be implanted. Accordingly, it is possible to manufacture a substrate with an excellent surface micro-roughness. Since a bonded substrate can be separated using low temperature heat treatment by interaction between implanted ions and impurity, it is possible to reduce manufacturing costs and facilitate an apparatus.

Abstract translation: 提供了一种制造应变绝缘体上硅（SSOI）衬底的方法，其可以通过使用低温热处理分离键合衬底来制造SSOI衬底。 该制造方法包括：提供基板; 在衬底上生长硅锗（SiGe），从而形成SiGe层; 在SiGe层上生长具有小于SiGe的晶格常数的晶格常数的硅（Si），从而形成转变的Si层; 以及在所转化的Si层的表面上注入离子，其中，当SiGe层生长时，SiGe层在要注入离子的深度掺杂有杂质。 因此，可以制造具有优异的表面微粗糙度的基板。 由于键合衬底可以通过使用注入离子和杂质之间的相互作用的低温热处理来分离，所以可以降低制造成本并促进设备。