公开(公告)号：US11632107B1

公开(公告)日：2023-04-18

申请号：US17492180

申请日：2021-10-01

Applicant: pSemi Corporation

Inventor： Ravindranath D. Shrivastava ,  Alper Genc

IPC: H03K17/16 ,  H03K17/041 ,  H03K17/0412 ,  H03K17/693 ,  H04B1/44 ,  H03K17/687 ,  H03K17/06 ,  H01L27/06

Abstract: A FET switch stack has a stacked arrangement of FET switches, a gate resistor network with ladder resistors and common gate resistors, and a gate resistor bypass arrangement. The bypass arrangement has a first set of bypass switches connected across the gate resistors and a second set of bypass switches connected across the ladder resistors. Bypass occurs during at least a portion of the transition state of the stacked arrangement of FET switches.

公开(公告)号：US10790390B2

公开(公告)日：2020-09-29

申请号：US16377026

申请日：2019-04-05

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L27/12 ,  H01L29/78 ,  H01L49/02 ,  H01L29/06 ,  H01L29/08 ,  H03K17/16 ,  H01L29/10 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US12074217B2

公开(公告)日：2024-08-27

申请号：US17206436

申请日：2021-03-19

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/36 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L49/02 ,  H03K17/16

CPC classification number: H01L29/7841 ,  H01L27/1203 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4908 ,  H01L29/78615 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US10629733B2

公开(公告)日：2020-04-21

申请号：US16046974

申请日：2018-07-26

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/06 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786 ,  H03K17/16 ,  H01L49/02 ,  H01L29/08 ,  H01L29/10

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US20190088781A1

公开(公告)日：2019-03-21

申请号：US16046974

申请日：2018-07-26

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L49/02 ,  H01L29/49 ,  H01L29/36 ,  H01L29/786 ,  H01L27/12 ,  H03K17/16

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US10074746B2

公开(公告)日：2018-09-11

申请号：US15693182

申请日：2017-08-31

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L27/12 ,  H01L29/78 ,  H03K17/16 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/7841 ,  H01L27/1203 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4908 ,  H01L29/78615 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US20210320206A1

公开(公告)日：2021-10-14

申请号：US17206436

申请日：2021-03-19

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  H03K17/16 ,  H01L49/02 ,  H01L29/08 ,  H01L29/10

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US11011633B2

公开(公告)日：2021-05-18

申请号：US16739093

申请日：2020-01-09

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/06 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786 ,  H03K17/16 ,  H01L49/02 ,  H01L29/08 ,  H01L29/10

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US12176888B2

公开(公告)日：2024-12-24

申请号：US18307446

申请日：2023-04-26

Applicant: pSemi Corporation

Inventor： Alper Genc

IPC: H03K17/0812 ,  H03K17/16 ,  H03K17/693

Abstract: Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and/or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.

公开(公告)号：US20240421227A1

公开(公告)日：2024-12-19

申请号：US18815809

申请日：2024-08-26

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786 ,  H03K17/16

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.