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公开(公告)号：US20240235164A9
公开(公告)日：2024-07-11
申请号：US18546593
申请日：2022-01-27
发明人： Bruno Jentzsch , Hubert Halbritter , Alexander Behres , Alvaro Gomez-lglesias , Christian Lauer , Simon Baumann
CPC分类号： H01S5/343 , H01S5/2031 , H01S5/3013 , H01S5/3095
摘要： In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.
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公开(公告)号：US11867375B2
公开(公告)日：2024-01-09
申请号：US17924778
申请日：2021-05-11
发明人： Laura Kreiner , Bruno Jentzsch
IPC分类号： F21S43/00 , F21S43/13 , G01S17/931 , B60Q1/30 , G01S7/481 , H01L33/00 , H01L33/46 , H01S5/028 , H01S5/10 , F21Y115/30
CPC分类号： F21S43/13 , B60Q1/302 , G01S7/4814 , G01S17/931 , H01L33/0045 , H01L33/46 , H01S5/0287 , H01S5/1085 , F21Y2115/30
摘要： A radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer for generating electromagnetic radiation. The semiconductor chip also includes a reflector at a side surface of the semiconductor layer sequence having a reflector surface facing the semiconductor layer sequence and extending obliquely with respect to the active layer. The semiconductor chip further includes a top surface extending transversely with respect to the reflector surface and having a first emission region. The semiconductor chip additionally includes a further reflector situated opposite the reflector. The semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the reflector and emerges from the semiconductor chip via the emission region of the top surface. A main emission direction of the emerging electromagnetic radiation together with the active layer form an emergence angle of between 30° and 80° inclusive.
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公开(公告)号：US20240136800A1
公开(公告)日：2024-04-25
申请号：US18546593
申请日：2022-01-27
发明人： Bruno Jentzsch , Hubert Halbritter , Alexander Behres , Alvaro Gomez-lglesias , Christian Lauer , Simon Baumann
CPC分类号： H01S5/343 , H01S5/2031 , H01S5/3013 , H01S5/3095
摘要： In an embodiment a semiconductor emitter includes a semiconductor layer sequence having a plurality of active zones, each active zone including at least one quantum well layer and at least two barrier layers between which the at least one quantum well layer is embedded, and at least one tunnel diode located along a growth direction of the semiconductor layer sequence between adjacent active zones, wherein a thickness of the at least one tunnel diode is at most 40 nm, and wherein a distance between adjacent barrier layers of adjacent active zones, facing the at least one tunnel diode, is at most 50 nm.
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公开(公告)号：US20240022044A1
公开(公告)日：2024-01-18
申请号：US18253256
申请日：2021-11-19
IPC分类号： H01S5/10 , H01S5/02255 , H01S5/028
CPC分类号： H01S5/1021 , H01S5/02255 , H01S5/1092 , H01S5/0287
摘要： In an embodiment a semiconductor laser includes a semiconductor body having a plurality of resonator regions, wherein the resonator regions are arranged side by side along a lateral direction, each resonator region having an active region configured to generate radiation, wherein the semiconductor body extends between two side faces, wherein the resonator regions are configured to emit laser radiation at one of the two side faces, and a layer sequence attached to at least one of the side faces, wherein the layer sequence forms at least part of a resonator mirror for at least one resonator region.
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