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公开(公告)号：US12119423B2
公开(公告)日：2024-10-15
申请号：US18488909
申请日：2023-10-17
IPC分类号： H01L31/18 , H01L31/02 , H01L31/0288
CPC分类号： H01L31/1868 , H01L31/02008 , H01L31/0288 , H01L31/182
摘要： The solar cell includes a silicon substrate, multiple first electrodes, and multiple second electrodes. The solar cell further includes a tunneling oxide layer, multiple doped polysilicon layers, and at least one barrier layer. The at least one barrier layer is arranged between every adjacent two doped polysilicon layers in the multiple doped polysilicon layers, and the multiple first electrodes are electrically connected to different doped polysilicon layers. The solar cell provided according to the present application can reduce the total thickness of the polycrystalline silicon layer, so that a thinner polycrystalline silicon layer can reduce parasitic absorption, thereby increasing short-circuit current. Moreover, the risk of slurry burning through the tunneling oxide layer is reduced by the barrier layer, while reducing metal recombination, which increases the open circuit voltage of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell.
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公开(公告)号：US11749768B2
公开(公告)日：2023-09-05
申请号：US18054495
申请日：2022-11-10
发明人： Wenqi Li , Jie Yang , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/0216 , H01L31/068 , H01L31/18 , H01L31/054
CPC分类号： H01L31/0543 , H01L31/02167 , H01L31/0682 , H01L31/1868
摘要： A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/jϵ[0.97, 7.58].
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公开(公告)号：US11955571B2
公开(公告)日：2024-04-09
申请号：US18336711
申请日：2023-06-16
发明人： Ruifeng Li , Wenqi Li , Yankai Qiu , Ning Zhang , Bin Li
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/02167 , H01L31/1868
摘要： The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, a ratio of the number of oxide atoms to the number of aluminum atoms in the at least one aluminum oxide layer is greater than 0.8 and less than 1.6. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitrogen atoms in the at least one silicon oxynitride layer. A ratio of the number of silicon atoms to the number of nitrogen atoms in the at least one silicon nitride layer is greater than 1 and less than 4.
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公开(公告)号：US11545590B2
公开(公告)日：2023-01-03
申请号：US17203743
申请日：2021-03-16
发明人： Wenqi Li , Jie Yang , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/0216 , H01L31/068 , H01L31/054 , H01L31/18
摘要： A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/j∈[0.97, 7.58].
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公开(公告)号：US11605748B2
公开(公告)日：2023-03-14
申请号：US17203743
申请日：2021-03-16
发明人： Wenqi Li , Jie Yang , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/0216 , H01L31/068 , H01L31/054 , H01L31/18
摘要： A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/j∈[0.97, 7.58].
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公开(公告)号：US11848392B2
公开(公告)日：2023-12-19
申请号：US17529705
申请日：2021-11-18
发明人： Xiaowen Zhang , Wenqi Li , Shijie Zhao , Ding Yu , Jialei Chai , Jie Yang , Menglei Xu
IPC分类号： H01L31/0224 , H01L31/0216 , H01L31/028
CPC分类号： H01L31/022425 , H01L31/028 , H01L31/02167
摘要： Provided are a solar cell and a photovoltaic module. The solar cell includes: a silicon substrate; a passivation layer provided on a surface of the silicon substrate; a first electrode conductor at least partially arranged on the passivation layer and including a body portion and protruding portions located on two ends of the body portion; and a second electrode conductor at least partially arranged on the passivation layer and at least partially overlapping with the protruding portions. A length of each of the protruding portions in a width direction of the body portion is greater than a width of the body portion.
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公开(公告)号：US10991834B1
公开(公告)日：2021-04-27
申请号：US16901242
申请日：2020-06-15
发明人： Wenqi Li , Jie Yang , Xueting Yuan , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/0216 , H01L31/18
摘要： A solar cell is provided. The solar cell at least includes a semiconductor layer and a plurality of passivation layers provided on a back surface of the semiconductor layer. The passivation layers include a first silicon oxynitride film layer having a first refractive index, a second silicon oxynitride film layer having a second refractive index and provided on a surface of the first silicon oxynitride film layer, and a silicon nitride film layer having a third refractive index and provided on a surface of the second silicon oxynitride film layer.
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公开(公告)号：US11784266B2
公开(公告)日：2023-10-10
申请号：US17504498
申请日：2021-10-18
发明人： Wenqi Li , Peiting Zheng , Jie Yang , Menglei Xu , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/048 , H01L31/0216 , H01L31/18 , H01L31/0236
CPC分类号： H01L31/048 , H01L31/02167 , H01L31/1864 , H01L31/1868 , H01L31/02366
摘要： A solar cell includes a substrate having a front surface and a back surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface of the substrate and in a direction away from the substrate; where the first passivation layer includes a dielectric material; the second passivation layer includes a first SiuNv material, and a value of v/u is 1.3≤v/u≤1.7; and the third passivation layer includes a SirOs material, and a value of s/r is 1.9≤s/r≤3.2; and a tunneling oxide layer and a doped conductive layer sequentially formed on the back surface of the substrate and in a direction away from the back surface; the doped conductive layer and the substrate are doped to have a same conductivity type.
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公开(公告)号：US10991838B1
公开(公告)日：2021-04-27
申请号：US16901143
申请日：2020-06-15
发明人： Jie Yang , Wenqi Li , Xueting Yuan , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/054 , H01L31/18 , H01L31/048
摘要： Provided is a solar cell. The solar cell may include a semiconductor layer and a passivation film stack provided on a back surface of the semiconductor layer. The passivation film stack may include a first passivation layer provided on the back surface of the semiconductor layer and including a silicon-rich layer with a silicon atom concentration ranging from 5×1021/cm3 to 2.5×1022/cm3; a second passivation layer provided on a surface of the first passivation layer and including an oxygen-rich and nitrogen-rich layer; and a third passivation layer provided on a surface of the second passivation layer and including at least one silicon nitride film with a gradient-varied refractive index. A first refractive index of the first passivation layer may be greater than a second refractive index of the second passivation layer and smaller than a third refractive index of the third passivation layer.
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公开(公告)号：US11742447B2
公开(公告)日：2023-08-29
申请号：US17197912
申请日：2021-03-10
发明人： Jie Yang , Wenqi Li , Xueting Yuan , Xinyu Zhang , Hao Jin
IPC分类号： H01L31/054 , H01L31/048 , H01L31/18
CPC分类号： H01L31/0543 , H01L31/0481 , H01L31/1868 , Y02E10/50
摘要： Provided is a solar cell. The solar cell may include a semiconductor layer and a passivation film stack provided on a back surface of the semiconductor layer. The passivation film stack may include a first passivation layer provided on the back surface of the semiconductor layer and including a silicon-rich layer with a silicon atom concentration ranging from 5×1021/cm3 to 2.5×1022/cm3; a second passivation layer provided on a surface of the first passivation layer and including an oxygen-rich and nitrogen-rich layer; and a third passivation layer provided on a surface of the second passivation layer and including at least one silicon nitride film with a gradient-varied refractive index. A first refractive index of the first passivation layer may be greater than a second refractive index of the second passivation layer and smaller than a third refractive index of the third passivation layer.
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