公开(公告)号：US11955571B2

公开(公告)日：2024-04-09

申请号：US18336711

申请日：2023-06-16

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Ruifeng Li ,  Wenqi Li ,  Yankai Qiu ,  Ning Zhang ,  Bin Li

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02168 ,  H01L31/02167 ,  H01L31/1868

摘要： The photovoltaic cell includes a silicon substrate, a first passivation layer, a second passivation layer, at least one silicon oxynitride layer, and at least one silicon nitride layer. The second passivation layer includes a first silicon oxide layer and at least one aluminum oxide layer, a ratio of the number of oxide atoms to the number of aluminum atoms in the at least one aluminum oxide layer is greater than 0.8 and less than 1.6. The number of silicon atoms is greater than the number of oxygen atoms in the at least one silicon oxynitride layer and the number of oxygen atoms is greater than the number of nitrogen atoms in the at least one silicon oxynitride layer. A ratio of the number of silicon atoms to the number of nitrogen atoms in the at least one silicon nitride layer is greater than 1 and less than 4.

公开(公告)号：US11600731B2

公开(公告)日：2023-03-07

申请号：US17857169

申请日：2022-07-04

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Ruifeng Li ,  Yankai Qiu ,  Ning Zhang ,  Bin Li

IPC分类号： H01L31/0216 ,  H01L31/18

摘要： A photovoltaic cell is provided, which includes a substrate; a first passivation layer and a first anti-reflection layer disposed on a front surface of the substrate; and a second passivation layer, a PPW layer and at least one silicon nitride layer SiuNv (1 s>t), a refractive index and a thickness of which are respectively in ranges of 1.5 to 1.8 and 1 nm to 30 nm.

公开(公告)号：US11437529B2

公开(公告)日：2022-09-06

申请号：US17386442

申请日：2021-07-27

申请人： ZHEJIANG JINKO SOLAR CO., LTD. ,  JINKO SOLAR CO., LTD.

发明人： Ruifeng Li ,  Yankai Qiu ,  Ning Zhang ,  Bin Li

IPC分类号： H01L31/0216 ,  H01L31/18

摘要： A photovoltaic cell is provided, which includes a substrate; a first passivation layer and a first anti-reflection layer disposed on a front surface of the substrate; and a second passivation layer, a PPW layer and at least one silicon nitride layer SiuNv (1 s>t), a refractive index and a thickness of which are respectively in ranges of 1.5 to 1.8 and 1 nm to 30 nm.