公开(公告)号：US06556603B1

公开(公告)日：2003-04-29

申请号：US09659601

申请日：2000-09-11

申请人： Yukio Yamasaki ,  Toshiyuki Okumura

发明人： Yukio Yamasaki ,  Toshiyuki Okumura

IPC分类号： H01S5343

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/3211 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

摘要： A nitride-contained semiconductor laser element includes a layer formed of an Alx1Ga1−x1N (0.08≦x1≦0.2) lower clad layer, an active layer formed of an alternate multilayer structure including an InwGa1−wN well layer and an InvGa1−vN barrier layer, and an Alx2Ga1−x2N (0.08≦x2≦0.2) upper clad layer layered in this order on a substrate, one or a plurality of InzGa1−zN (0≦z≦0.2) buffer layer(s) of 200 nm or less in thickness being disposed in the lower clad layer and/or the upper clad layer.

摘要翻译： 含氮化物的半导体激光元件包括由Al x Ga 1-x N（0.08 <= x1 <0.2）下包层形成的层，由包括InwGa1-wN阱层和InvGa1-vN的交替多层结构形成的有源层 一个或多个InzGa1-zN（0≤z≤0.2）的缓冲层，其中所述第一和第二阻挡层以及依次层叠在其上的Alx2Ga1-x2N（0.08 <= x2 <= 0.2） 200nm以下的厚度设置在下包层和/或上覆层中。

公开(公告)号：US08124431B2

公开(公告)日：2012-02-28

申请号：US12805750

申请日：2010-08-18

申请人： Yukio Yamasaki

发明人： Yukio Yamasaki

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0201 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3211

摘要： A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.

摘要翻译： 一种生产氮化物半导体激光器件的方法包括：形成包括第一导电类型的氮化物半导体层，氮化物半导体的有源层，第二导电类型的氮化物半导体层和第二导电类型的电极焊盘的晶片 导电类型依次堆叠在导电基板的主表面上，并且还包括平行于有源层的条状波导结构; 切割晶片以获得第一类型和第二类型的激光器件芯片; 并通过自动图像识别区分第一类型和第二类型的芯片。 第一类型和第二类型的芯片在条形波导结构相对于每个芯片的宽度方向的位置上彼此不同，并且电极焊盘与基板的主表面的面积比也不同。

公开(公告)号：US20050226295A1

公开(公告)日：2005-10-13

申请号：US10510324

申请日：2003-03-26

申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01S5/20 ,  H01S5/00

CPC分类号： H01S5/20

摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2

摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上的折射率n C 1的第一覆盖层 折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层， 指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率 （N c1，n3，c3，...，n3）的关系，N > N（N N，N，N）满足。}

公开(公告)号：US20090251883A1

公开(公告)日：2009-10-08

申请号：US12382282

申请日：2009-03-12

申请人： Yukio Yamasaki ,  Katsuhiko Kishimoto

发明人： Yukio Yamasaki ,  Katsuhiko Kishimoto

IPC分类号： F21V9/16

CPC分类号： H01S5/34326 ,  B82Y20/00 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01S5/005 ,  H01S5/0202 ,  H01S5/02288 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0658 ,  H01S5/2215 ,  H01S5/4031 ,  H01S2301/02 ,  H01L2924/00014

摘要： A light-emitting device including a semiconductor laser element having at least a substrate, a first conductive type clad layer, an active layer, and a second conductive type clad layer in this order; and a phosphor absorbing a laser light emitted from the semiconductor laser element and radiating fluorescence, wherein the semiconductor laser element is a self-oscillation laser element.

摘要翻译： 一种发光器件，其包括依次具有至少衬底，第一导电型覆盖层，有源层和第二导电型覆盖层的半导体激光元件; 以及吸收从半导体激光元件发射的激光并发出荧光的荧光体的荧光体，其中，所述半导体激光元件为自激振荡激光元件。

公开(公告)号：US20070217462A1

公开(公告)日：2007-09-20

申请号：US11715443

申请日：2007-03-08

申请人： Yukio Yamasaki

发明人： Yukio Yamasaki

IPC分类号： H01L21/00 ,  H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0201 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3211

摘要： A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.

摘要翻译： 一种生产氮化物半导体激光器件的方法包括：形成包括第一导电类型的氮化物半导体层，氮化物半导体的有源层，第二导电类型的氮化物半导体层和第二导电类型的电极焊盘的晶片 导电类型依次堆叠在导电基板的主表面上，并且还包括平行于有源层的条状波导结构; 切割晶片以获得第一类型和第二类型的激光器件芯片; 并通过自动图像识别区分第一类型和第二类型的芯片。 第一类型和第二类型的芯片在条形波导结构相对于每个芯片的宽度方向的位置上彼此不同，并且电极焊盘与基板的主表面的面积比也不同。

公开(公告)号：US07142575B2

公开(公告)日：2006-11-28

申请号：US10769244

申请日：2004-01-30

申请人： Yukio Yamasaki ,  Shigetoshi Ito

发明人： Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34333

摘要： A semiconductor laser element has the following structure. In the clad layer, a difference in a light radiation loss between the basic horizontal-lateral mode and the 1st-order horizontal-lateral mode is 10 cm−1 or more. The refractive index of the clad layer is below an effective index against light in the basic horizontal-lateral mode, and the refractive index of the clad layer is equal to or more than an effective index against light in the 1st-order horizontal-lateral mode. The upper clad layer is provided only above a portion of the active layer, and thus is at least included in the ridge-stripe structure. This structure inhibits the I-L characteristic from suffering kink and realizes oscillations in the basic horizontal-lateral mode until output power reaches as high as 60–100 mW, in a peak output power of the semiconductor laser element at the time of a pulse current operation. This structure also enables the FFP to have an ellipticity of close to 1, thus making the spot of the semiconductor laser element close to a circular shape.

摘要翻译： 半导体激光元件具有以下结构。 在包覆层中，基本水平横向模式和一阶水平横向模式之间的光辐射损失之差为10cm -1以上。 包覆层的折射率低于基本水平横向模式中的光的有效折射率，并且包覆层的折射率等于或大于一阶水平横向模式中的光的有效折射率 。 上覆盖层仅设置在有源层的一部分上方，因此至少包括在脊条结构中。 这种结构在脉冲电流操作时抑制了半导体激光器元件的峰值输出功率，从而抑制I-L特性遭受扭结并实现基本水平横向模式的振荡，直到输出功率达到高达60-100mW。 该结构也使得FFP具有接近1的椭圆率，从而使半导体激光元件的光斑接近圆形。

公开(公告)号：US06670647B1

公开(公告)日：2003-12-30

申请号：US09652101

申请日：2000-08-30

申请人： Yukio Yamasaki ,  Shigetoshi Ito

发明人： Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  B82Y20/00 ,  G11B7/127 ,  H01L33/06 ,  H01S5/0213 ,  H01S5/1057 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/14 ,  H01S2304/04

摘要： A semiconductor light emitting element includes: a first conductive type layer made of a nitride semiconductor which is deposited on a substrate; a quantum well active layer made of AlPGaQIn1−P−QN (O≦P, O≦Q, P+Q

摘要翻译： 半导体发光元件包括：沉积在基板上的由氮化物半导体制成的第一导电类型层; 由沉积在第一导电类型层上的AlPGaQIn1-P-QN（O <= P，O <= Q，P + Q <1）制成的量子阱有源层，量子阱活性层包括一对势垒层 以及插入其间的阱层; 以及沉积在量子阱有源层上的由氮化物半导体制成的第二导电类型层，其中从量子阱有源层的端面自发地发射到与基板平行的方向偏振的光。

公开(公告)号：US08059691B2

公开(公告)日：2011-11-15

申请号：US12801831

申请日：2010-06-28

申请人： Yukio Yamasaki

发明人： Yukio Yamasaki

IPC分类号： H01S3/097

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0201 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3211

摘要： A method of producing a nitride semiconductor laser device includes forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.

摘要翻译： 一种氮化物半导体激光器件的制造方法，其特征在于，包括：形成包括第一导电型的氮化物半导体层，氮化物半导体的有源层，第二导电型的氮化物半导体层和第二导电型的电极焊盘的晶片 类型堆叠在导电衬底的主表面上，并且还包括平行于有源层的条状波导结构; 切割晶片以获得第一类型和第二类型的激光器件芯片; 并通过自动图像识别区分第一类型和第二类型的芯片。 第一类型和第二类型的芯片在条形波导结构相对于每个芯片的宽度方向的位置上彼此不同，并且电极焊盘与基板的主表面的面积比也不同。

公开(公告)号：US07724793B2

公开(公告)日：2010-05-25

申请号：US11605305

申请日：2006-11-29

申请人： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Shuichiro Yamamoto

发明人： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Shuichiro Yamamoto

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01S5/227

摘要： At each side of a ridge stripe 110, a trench is formed as a region carved relative to a wafer surface so that, at the time of cleaving, a surface irregularity that develops at a mirror facet near an active layer is prevented from reaching the ridge stripe 110.

摘要翻译： 在脊条110的每一侧，沟槽形成为相对于晶片表面雕刻的区域，使得在分裂时，在有源层附近的镜面处产生的表面不规则性被防止到达脊 条纹110。

公开(公告)号：US07372885B2

公开(公告)日：2008-05-13

申请号：US11304689

申请日：2005-12-16

申请人： Yukio Yamasaki

发明人： Yukio Yamasaki

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2022 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2301/18

摘要： A semiconductor laser device that offers higher coupling efficiency to a pickup optical system by dramatically reducing the amount of difference between the shape of an FFP in the vertical direction and a Gaussian shape, and that can be produced at lower cost by reducing the operating power needed. The semiconductor laser device is provided with a negative electrode, a GaN substrate, a first n-type clad layer, an n-type light shielding layer that shields light, a second n-type clad layer, an n-type optical waveguide layer, a first carrier stop layer, an active layer, a second carrier stop layer, a p-type optical waveguide layer, a p-type clad layer, a p-type contact layer, and a positive electrode laid in this order.

摘要翻译： 一种半导体激光器件，其通过显着地减少FFP在垂直方向上的形状和高斯形状之间的差异，从而对拾取光学系统提供更高的耦合效率，并且可以通过降低所需的功率来以更低的成本产生 。 半导体激光装置设置有负极，GaN衬底，第一n型覆盖层，屏蔽光的n型遮光层，第二n型覆盖层，n型光波导层， 第一载流子停止层，有源层，第二载流子停止层，p型光波导层，p型覆盖层，p型接触层和正极。