公开(公告)号：US06359920B1

公开(公告)日：2002-03-19

申请号：US09320945

申请日：1999-05-26

申请人： Jack L. Jewell ,  Henryk Temkin

发明人： Jack L. Jewell ,  Henryk Temkin

IPC分类号： H01S5343

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3235 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/343 ,  H01S5/34306 ,  H01S2302/00

摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），以及（4）使用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其它材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

公开(公告)号：US06618413B2

公开(公告)日：2003-09-09

申请号：US10024239

申请日：2001-12-21

申请人： David P. Bour ,  Michael A. Kneissl

发明人： David P. Bour ,  Michael A. Kneissl

IPC分类号： H01S5343

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/321 ,  H01S5/34333

摘要： Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.

摘要翻译： 基于氮化物的半导体激光器结构中的GaN和AlGaN层之间的梯度半导体层通过降低GaN和AlGaN层之间的界面处的电位势垒来降低激光器结构的阈值电压。 分级层可以分级，连续分级或数字分级。

公开(公告)号：US06556603B1

公开(公告)日：2003-04-29

申请号：US09659601

申请日：2000-09-11

申请人： Yukio Yamasaki ,  Toshiyuki Okumura

发明人： Yukio Yamasaki ,  Toshiyuki Okumura

IPC分类号： H01S5343

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/3211 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

摘要： A nitride-contained semiconductor laser element includes a layer formed of an Alx1Ga1−x1N (0.08≦x1≦0.2) lower clad layer, an active layer formed of an alternate multilayer structure including an InwGa1−wN well layer and an InvGa1−vN barrier layer, and an Alx2Ga1−x2N (0.08≦x2≦0.2) upper clad layer layered in this order on a substrate, one or a plurality of InzGa1−zN (0≦z≦0.2) buffer layer(s) of 200 nm or less in thickness being disposed in the lower clad layer and/or the upper clad layer.

摘要翻译： 含氮化物的半导体激光元件包括由Al x Ga 1-x N（0.08 <= x1 <0.2）下包层形成的层，由包括InwGa1-wN阱层和InvGa1-vN的交替多层结构形成的有源层 一个或多个InzGa1-zN（0≤z≤0.2）的缓冲层，其中所述第一和第二阻挡层以及依次层叠在其上的Alx2Ga1-x2N（0.08 <= x2 <= 0.2） 200nm以下的厚度设置在下包层和/或上覆层中。

公开(公告)号：US06219365B1

公开(公告)日：2001-04-17

申请号：US09185354

申请日：1998-11-03

申请人： Luke J. Mawst ,  Dan Botez ,  Abdulrahman Al-Muhanna ,  Jerome Kent Wade

发明人： Luke J. Mawst ,  Dan Botez ,  Abdulrahman Al-Muhanna ,  Jerome Kent Wade

IPC分类号： H01S5343

CPC分类号： B82Y20/00 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34326

摘要： The semiconductor laser emitting light in the wavelength range of about 700 nm to 800 nm utilizes an aluminum-free active region layer. An epitaxial structure is grown on a GaAs or AlGaAs substrate and includes an active region layer, confinement layers adjacent the active region layer, and cladding layers adjacent the confinement layers. The active region layer comprises at least one compressively strained InGaAsP quantum well surrounded by transitional layers, with the composition and width of the active region selected to emit light at a selected wavelength, particularly between about 700 nm and 800 nm. High band-gap InGaAlP cladding layers and confinement layers may be utilized to suppress carrier leakage, and the epitaxial structure may be grown on a misoriented substrate to further reduce carrier leakage from the quantum well and improve the crystalline quality of the quantum well. The lasers are capable of operating at high powers with high reliability for longer lifetimes than are obtainable with laser structures emitting the same wavelength range which require the use of aluminum in the active region.

摘要翻译： 在约700nm至800nm的波长范围内发射光的半导体激光器使用无铝活性区域层。 在GaAs或AlGaAs衬底上生长外延结构，并且包括有源区域层，与有源区域层相邻的限制层以及邻近限制层的覆层。 有源区层包括由过渡层包围的至少一个压缩应变的InGaAsP量子阱，其中有源区的组成和宽度被选择为发射选定波长，特别是在约700nm与800nm之间的光。 可以利用高带隙InGaAlP包覆层和限制层来抑制载流子泄漏，并且外延结构可以在取向错误的衬底上生长，以进一步减少量子阱中的载流子泄漏并提高量子阱的结晶质量。 激光器能够以高功率运行，具有比需要在有源区域中使用铝的相同波长范围的激光结构可获得更长寿命的更长寿命。