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    Extended wavelength strained layer lasers having nitrogen disposed therein
    2.
    发明授权
    Extended wavelength strained layer lasers having nitrogen disposed therein 失效
    具有氮的扩展波长应变层激光器设置在其中

    公开(公告)号：US06920165B2

    公开(公告)日：2005-07-19

    申请号：US10373566

    申请日：2003-02-26

    申请人： Jack L. Jewell ,  Henryk Temkin

    发明人： Jack L. Jewell ,  Henryk Temkin

    IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3235 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/343 ,  H01S5/34306 ,  H01S2302/00

    摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 μm or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），以及（4）使用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其它材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

    Method for fabricating a semiconductor device
    6.
    发明授权
    Method for fabricating a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US5882948A

    公开(公告)日：1999-03-16

    申请号：US965009

    申请日：1997-11-05

    申请人： Jack L. Jewell

    发明人： Jack L. Jewell

    IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01S5/20 ,  H05L21/20

    CPC分类号： H01S5/18341 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18372 ,  H01S5/2059 ,  H01S5/2081

    摘要： A method for fabricating a semiconductor device is provided in which a first layer having a first conductivity type is grown, a current aperture region comprising at least one layer of an oxidizable material is grown, a second layer is grown, an impurity material is diffused through a first region of the layer of oxidizable material to decrease the susceptibility to oxidation in the first region and to provide a conductive channel through the layer of oxidizable material, the semiconductor device is etched to expose a sidewall of the oxidizable layer, and the oxidizable layer is oxidized in a region outside of the first region to form an oxidized region while leaving at least a portion of the first region non-oxidized to form a current aperture in the oxidizable layer.

    摘要翻译： 提供了一种制造半导体器件的方法，其中生长具有第一导电类型的第一层，生长包括至少一层可氧化材料的电流孔径区域，生长第二层，杂质材料通过 所述可氧化材料层的第一区域，以降低所述第一区域中的氧化敏感性，并且通过所述可氧化材料层提供导电通道，所述半导体器件被蚀刻以暴露所述可氧化层的侧壁，并且所述可氧化层 在第一区域外部的区域中被氧化以形成氧化区域，同时留下第一区域的至少一部分未被氧化以在可氧化层中形成电流孔。

    Lens comprising at least one oxidized layer and method for forming same
    7.
    发明授权
    Lens comprising at least one oxidized layer and method for forming same 失效
    包含至少一个氧化层的透镜及其形成方法

    公开(公告)号：US5881085A

    公开(公告)日：1999-03-09

    申请号：US686489

    申请日：1996-07-25

    申请人： Jack L. Jewell

    发明人： Jack L. Jewell

    IPC分类号： G02B3/00 ,  H01L33/02 ,  H01L33/10 ,  H01S5/183 ,  H01S3/19

    CPC分类号： H01S5/18313 ,  G02B3/00 ,  H01L33/02 ,  H01L33/105 ,  H01S2301/18 ,  H01S5/0267 ,  H01S5/1833 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18372

    摘要： A lens having at least one oxidized layer is provided. Numerous structures for the lens are discussed. Additionally, methods for manufacturing the lens are also discussed. The methods include: 1) variation in thickness of oxidizable layers; 2) variation in thickness of non-oxidizable layers; 3) variation in Al concentration of oxidizable layers; 4) variation in Al concentration of non-oxidizable layers; 5) variation in doping concentration of oxidizable layers; 6) use of interdiffusion between oxidizable and non-oxidizable; 7) local variation in ion implantation dose; and 8) variation in mesa diameter.

    摘要翻译： 提供具有至少一个氧化层的透镜。 讨论了镜头的许多结构。 此外，还讨论了制造透镜的方法。 方法包括：1）可氧化层厚度变化; 2）不可氧化层厚度的变化; 3）可氧化层的Al浓度变化; 4）不可氧化层的Al浓度变化; 5）可氧化层的掺杂浓度变化; 6）使用可氧化和不可氧化的相互扩散; 7）离子注入剂量的局部变化; 和8）台面直径的变化。

    Intra-cavity lens structures for semiconductor lasers
    8.
    发明授权
    Intra-cavity lens structures for semiconductor lasers 失效
    用于半导体激光器的腔内透镜结构

    公开(公告)号：US5822356A

    公开(公告)日：1998-10-13

    申请号：US796111

    申请日：1997-02-06

    申请人： Jack L. Jewell

    发明人： Jack L. Jewell

    IPC分类号： H01S3/00 ,  H01S5/00 ,  H01S5/183 ,  H01S3/0941

    CPC分类号： H01S5/18361 ,  H01S5/18311 ,  H01S5/18372 ,  H01S5/18388

    摘要： An improved lens structure is provided which reduces the scattering and/or reflection losses in an optical cavity. The lens comprising at least a first, second and third lens layer arranged vertically, the first and third lens layers being oxidized in first and third oxidized regions adjacent to first and third non-oxidized regions, the second layer disposed between the first and third layers and comprising a non-oxidized semiconductor material, the first and third non-oxidized regions comprising a semiconductor material, each of the oxidized regions having an aluminum contents greater than 20%; and appropriately spacing the first lens layer from the third lens layer to reduce the scattering and/or reflection losses in an optical cavity.

    摘要翻译： 提供了改进的透镜结构，其减少了光腔中的散射和/或反射损失。 所述透镜包括至少垂直布置的第一，第二和第三透镜层，所述第一和第三透镜层在与第一和第三非氧化区域相邻的第一和第三氧化区域中被氧化，所述第二层设置在所述第一和第三层之间 并且包括非氧化半导体材料，所述第一和第三非氧化区域包含半导体材料，所述氧化区域的铝含量大于20％; 并且适当地将第一透镜层与第三透镜层间隔开以减少光腔中的散射和/或反射损失。

    Extended wavelength strained layer lasers having short period superlattices
    10.
    发明授权
    Extended wavelength strained layer lasers having short period superlattices 失效
    具有短周期超晶格的扩展波长应变层激光器

    公开(公告)号：US5719895A

    公开(公告)日：1998-02-17

    申请号：US721769

    申请日：1996-09-25

    申请人： Jack L. Jewell ,  Henryk Temkin

    发明人： Jack L. Jewell ,  Henryk Temkin

    IPC分类号： H01S5/183 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/103

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/18311 ,  H01S2302/00 ,  H01S5/2215 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/34306

    摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），（4）采用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其他材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。