公开(公告)号：US06459713B2

公开(公告)日：2002-10-01

申请号：US09826952

申请日：2001-04-06

申请人： Jack L. Jewell

发明人： Jack L. Jewell

IPC分类号： H01D500

CPC分类号： H01S5/18355 ,  G02B3/00 ,  H01L33/105 ,  H01S5/0042 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18372 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/2068 ,  H01S5/2215 ,  H04L67/34 ,  H04L69/329

摘要： A conductive element with a lateral oxidation barrier is provided for the control of lateral oxidation processes in semiconductor devices such as lasers, vertical cavity surface emitting lasers and light emitting diodes. The oxidation barrier is formed through modification of one or more layers which initially were receptive to oxidation. The quality of material directly below the oxidation barrier may be preserved. Related applications include the formation of vertical cavity surface emitting lasers on non-GaAs substrates and on GaAs substrates.