公开(公告)号：US20080136693A1

公开(公告)日：2008-06-12

申请号：US11950481

申请日：2007-12-05

申请人： Yi Gyeong KIM ,  Kwi Dong KIM ,  Chong Ki KWON ,  Jong Dae KIM

发明人： Yi Gyeong KIM ,  Kwi Dong KIM ,  Chong Ki KWON ,  Jong Dae KIM

IPC分类号： H03M3/00

CPC分类号： H03M3/374 ,  H03M3/338 ,  H03M3/424 ,  H03M3/45 ,  H03M3/452 ,  H03M3/454

摘要： Provided is a delta-sigma modulator including: a first integrator for integrating an input signal; an analog-to-digital converter for converting the integrated signal into a digital signal; and delay circuit for delaying an output signal of the analog-to-digital converter; and a differential delay circuit for differentially delaying the output signal of the analog-to-digital converter.

摘要翻译： 提供一种Δ-Σ调制器，包括：用于对输入信号进行积分的第一积分器; 用于将积分信号转换为数字信号的模拟 - 数字转换器; 以及用于延迟模数转换器的输出信号的延迟电路; 以及用于差分地延迟模数转换器的输出信号的差分延迟电路。

公开(公告)号：US20080128817A1

公开(公告)日：2008-06-05

申请号：US12018317

申请日：2008-01-23

申请人： Kwi Dong KIM ,  Chong Ki KWON ,  Jong Dae KIM

发明人： Kwi Dong KIM ,  Chong Ki KWON ,  Jong Dae KIM

IPC分类号： H01L23/62

CPC分类号： H01L29/7436 ,  H01L29/749 ,  H01L29/87 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well corresponding to a substrate of a ggNMOS device. Thus, a trigger voltage of the SCR is reduced. In addition, two discharge paths are formed using two SCRs including PNP and NPN bipolar transistors. As a result, the ESD protection circuit can have greater discharge capacity.

摘要翻译： 提供了一种应用于半导体集成电路（IC）的使用可控硅整流器（SCR）的静电放电（ESD）保护电路。 半导体衬底具有三重阱结构，使得偏置被施加到对应于ggNMOS器件的衬底的p阱。 因此，SCR的触发电压降低。 此外，使用包括PNP和NPN双极晶体管的两个SCR形成两个放电路径。 因此，ESD保护电路可以具有更大的放电容量。

公开(公告)号：US20090033530A1

公开(公告)日：2009-02-05

申请号：US12027495

申请日：2008-02-07

申请人： Young Deuk JEON ,  Young Kyun CHO ,  Kwi Dong KIM ,  Jong Kee KWON ,  Jong Dae KIM ,  Seung Chul LEE

发明人： Young Deuk JEON ,  Young Kyun CHO ,  Kwi Dong KIM ,  Jong Kee KWON ,  Jong Dae KIM ,  Seung Chul LEE

IPC分类号： H03M1/00

CPC分类号： H03M1/1245 ,  H03M1/002 ,  H03M1/44

摘要： Provided are a pipeline Analog-to-Digital Converter (ADC) without a front-end Sample-and-Hold Amplifier (SHA) and a method of controlling the same. The method includes the steps of: simultaneously sampling, at an ADC and a residual signal generator included in a first stage, an analog input signal and respectively generating a first sampling value and a second sampling value; holding, at the residual signal generator, the second sampling value, and simultaneously amplifying and converting, at the ADC, the first sampling value into a corresponding digital code; and generating, at the residual signal generator, a residual signal using the digital code. The pipeline ADC and method of controlling the same minimize sampling mismatch caused by removing a front-end SHA, thereby ensuring stable performance without a front-end SHA. Since a front-end SHA is not used, it is possible to reduce chip size and power consumption, and improve the performance of the ADC.

摘要翻译： 提供了没有前端采样保持放大器（SHA）的管线模数转换器（ADC）及其控制方法。 该方法包括以下步骤：在ADC和包括在第一级中的残余信号发生器同时对模拟输入信号进行采样，并分别产生第一采样值和第二采样值; 在剩余信号发生器处保持​​第二采样值，并且同时在ADC处放大并转换第一采样值为相应的数字代码; 以及在剩余信号发生器处产生使用数字码的残留信号。 流水线ADC和控制相同的方法最小化了通过去除前端SHA引起的采样失配，从而确保了没有前端SHA的稳定性能。 由于不使用前端SHA，因此可以减少芯片尺寸和功耗，并提高ADC的性能。

公开(公告)号：US20120324721A1

公开(公告)日：2012-12-27

申请号：US13607645

申请日：2012-09-07

申请人： Young Gi LEE ,  Kwang Man KIM ,  Min Gyu CHOI ,  Sang Hyo LEE ,  Jong Dae KIM

发明人： Young Gi LEE ,  Kwang Man KIM ,  Min Gyu CHOI ,  Sang Hyo LEE ,  Jong Dae KIM

IPC分类号： H01M6/00

CPC分类号： H01M6/40 ,  H01M4/366 ,  H01M4/76 ,  H01M6/02 ,  H01M6/181 ,  H01M10/0472

摘要： A method of manufacturing a flexible-film primary battery includes forming a first conductive carbon layer on a surface-treated inner surface of a first pouch film to form a positive electrode collector, and forming a positive electrode layer on the first conductive carbon layer to form a positive electrode plate. A second conductive carbon layer is formed on a surface-treated inner surface of a second pouch film to form a negative electrode collector, and a negative electrode layer is formed on the second conductive carbon layer to form a negative electrode plate. An adhesion/post-injection polymer electrolyte layer is inserted between the positive electrode plate and the negative electrode plate to manufacture a battery assembly. An electrolyte is injected into the polymer electrolyte layer of the battery assembly. The battery assembly is sealed completely to form a primary battery.

摘要翻译： 制造柔性膜一次电池的方法包括：在第一袋膜的表面处理内表面上形成第一导电性碳层，形成正极集电体，在第一导电性碳层上形成正极层，形成 正极板。 在第二袋膜的表面处理内表面上形成第二导电性碳层，形成负极集电体，在第二导电性碳层上形成负极层，形成负极板。 在正极板和负极板之间插入粘合/后注入聚合物电解质层以制造电池组件。 将电解质注入到电池组件的聚合物电解质层中。 电池组件被完全密封以形成一次电池。

公开(公告)号：US20080294875A1

公开(公告)日：2008-11-27

申请号：US12045844

申请日：2008-03-11

申请人： Chun Gi LYUH ,  Yil Suk YANG ,  Se Wan HEO ,  Soon Il YEO ,  Tae Moon ROH ,  Jong Dae KIM ,  Ki Chul KIM ,  Se Hoon YOO

发明人： Chun Gi LYUH ,  Yil Suk YANG ,  Se Wan HEO ,  Soon Il YEO ,  Tae Moon ROH ,  Jong Dae KIM ,  Ki Chul KIM ,  Se Hoon YOO

IPC分类号： G06F15/76 ,  G06F9/02

CPC分类号： G06F15/8007

摘要： Provided is a parallel processor for supporting a floating-point operation. The parallel processor has a flexible structure for easy development of a parallel algorithm involving multimedia computing, requires low hardware cost, and consumes low power. To support floating-point operations, the parallel processor uses floating-point accumulators and a flag for floating-point multiplication. Using the parallel processor, it is possible to process a geometric transformation operation in a 3-dimensional (3D) graphics process at low cost. Also, the cost of a bus width for instructions can be minimized by a partitioned Single-Instruction Multiple-Data (SIMD) method and a method of conditionally executing instructions.

摘要翻译： 提供了一种用于支持浮点运算的并行处理器。 并行处理器具有灵活的结构，便于开发涉及多媒体计算的并行算法，需要较低的硬件成本，并且消耗低功耗。 为了支持浮点运算，并行处理器使用浮点累加器和浮点乘法的标志。 使用并行处理器，可以以低成本在三维（3D）图形处理中处理几何变换操作。 此外，可以通过分区单指令多数据（SIMD）方法和有条件执行指令的方法来最小化用于指令的总线宽度的成本。

公开(公告)号：US20080132052A1

公开(公告)日：2008-06-05

申请号：US11947139

申请日：2007-11-29

申请人： Seung Eon MOON ,  Eun Kyoung KIM ,  Hong Yeol LEE ,  Jong Hyurk PARK ,  Kang Ho PARK ,  Jong Dae KIM ,  So Jeong PARK ,  Gyu Tae KIM

发明人： Seung Eon MOON ,  Eun Kyoung KIM ,  Hong Yeol LEE ,  Jong Hyurk PARK ,  Kang Ho PARK ,  Jong Dae KIM ,  So Jeong PARK ,  Gyu Tae KIM

IPC分类号： H01L21/44

CPC分类号： H01L21/76892 ,  H01L2221/1094

摘要： A method of fabricating an electronic device using nanowires, minimizing the number of E-beam processing steps and thus improving a yield, includes the steps of: forming electrodes on a substrate; depositing a plurality of nanowires on the substrate including the electrodes; capturing an image of the substrate including the nanowires and the electrodes; drawing virtual connection lines for connecting the nanowires with the electrodes on the image using an electrode pattern simulated through a computer program, after capturing the image; coating an E-beam photoresist on the substrate; removing the photoresist from regions corresponding to the virtual connection lines and the electrode pattern using E-beam lithography; depositing a metal layer on the substrate after removing the photoresist from the regions of the virtual connection lines; and removing remaining photoresist from the substrate using a lift-off process. It is possible to reduce the time and cost associated with fabricating electronic devices with nanowires because the number of E-beam processing steps remarkably decreases compared to the conventional method that fabricates electronic devices only by means of the E-beam lithography processes. After calling upon an image of the substrate having nanowires on a computer program, the electronic devices are fabricated with reference to the substrate image, thus enhancing the product yield.

摘要翻译： 使用纳米线制造电子器件的方法，使电子束处理步骤的数量最小化并因此提高产量，包括以下步骤：在衬底上形成电极; 在包括电极的基板上沉积多个纳米线; 捕获包括纳米线和电极的衬底的图像; 绘制虚拟连接线，用于在捕获图像之后，使用通过计算机程序模拟的电极图案将纳米线与图像上的电极连接; 在基板上涂覆电子束光致抗蚀剂; 使用电子束光刻从与虚拟连接线对应的区域和电极图案中去除光致抗蚀剂; 在从虚拟连接线的区域去除光致抗蚀剂之后，在基板上沉积金属层; 以及使用剥离工艺从衬底去除剩余的光致抗蚀剂。 与仅通过电子束光刻工艺制造电子器件的常规方法相比，电子束处理步骤的数量显着降低，可以减少与制造具有纳米线的电子器件相关联的时间和成本。 在计算机程序上调用具有纳米线的衬底的图像之后，参考衬底图像制造电子器件，从而提高产品产量。

公开(公告)号：US20110140579A1

公开(公告)日：2011-06-16

申请号：US12899499

申请日：2010-10-06

申请人： Seung Eon MOON ,  Sung Q. LEE ,  Sang Kyun LEE ,  Yil Suk YANG ,  Kang Ho PARK ,  Jong Dae KIM

发明人： Seung Eon MOON ,  Sung Q. LEE ,  Sang Kyun LEE ,  Yil Suk YANG ,  Kang Ho PARK ,  Jong Dae KIM

IPC分类号： H02N2/18 ,  H01L41/22

CPC分类号： H02N2/186 ,  H01L41/1136 ,  H02N2/188 ,  Y10T29/42

摘要： Provided is an active piezoelectric energy harvester, which can control a direct current voltage applied to an embedded variable capacitance layer to precisely adjust a resonance frequency in real time, and thus achieve a simpler structure and a smaller size compared to a conventional one that adjusts the resonance frequency using a separate variable capacitor provided outside. Further, the active piezoelectric energy harvester can precisely adjust the resonance frequency even when the frequency of vibration varies over time as in a real natural vibration environment or when it is degraded to undergo a variation in its own resonance frequency, and thus can continuously maintain optimal energy conversion characteristics.

摘要翻译： 提供了一种有源压电能量收集器，其可以控制施加到嵌入式可变电容层的直流电压，以实时精确地调节谐振频率，从而实现比传统调节器的传统电容器更简单的结构和更小的尺寸 谐振频率使用外部提供的单独的可变电容器。 此外，即使在真实的自然振动环境中，随着时间的推移，振动频率随时间而变化，或者当其自身的谐振频率变差而发生变化时，有源压电能量收集器也可以精确地调节谐振频率，从而可以持续保持最佳 能量转换特性。

公开(公告)号：US20080128285A1

公开(公告)日：2008-06-05

申请号：US11944232

申请日：2007-11-21

申请人： Seung Eon MOON ,  Eun Kyoung KIM ,  Hong Yeol LEE ,  Jong Hyurk PARK ,  Kang Ho PARK ,  Jong Dae KIM ,  Seok Hong MIN ,  Byung Gil JUNG ,  Seung Chul HA

发明人： Seung Eon MOON ,  Eun Kyoung KIM ,  Hong Yeol LEE ,  Jong Hyurk PARK ,  Kang Ho PARK ,  Jong Dae KIM ,  Seok Hong MIN ,  Byung Gil JUNG ,  Seung Chul HA

IPC分类号： G01N27/407 ,  C23C14/24 ,  C23C14/34

CPC分类号： G01N27/4045

摘要： An electrochemical gas sensor and a method of manufacturing the same are provided. The electrochemical gas sensor includes: a substrate; an electrode patterned on the substrate; a solid electrolyte layer having proton conductivity formed on the substrate having the patterned electrode; and a hydrophobic microporous membrane formed on the solid electrolyte layer. The gas sensor chip is easily integrated with a driving circuit and uses a solid electrolyte layer, and thus it can be manufactured in a smaller size and in a large area process.

摘要翻译： 提供一种电化学气体传感器及其制造方法。 电化学气体传感器包括：基板; 在基板上图案化的电极; 在具有图案化电极的基板上形成具有质子传导性的固体电解质层; 和形成在固体电解质层上的疏水性微孔膜。 气体传感器芯片易于与驱动电路集成，并且使用固体电解质层，因此可以以较小的尺寸和大面积的工艺制造。

公开(公告)号：US20080078443A1

公开(公告)日：2008-04-03

申请号：US11751674

申请日：2007-05-22

申请人： Yongseok JUN ,  Mangu KANG ,  Jong Dae KIM

发明人： Yongseok JUN ,  Mangu KANG ,  Jong Dae KIM

IPC分类号： H01L31/0224 ,  H01L31/0216

CPC分类号： H01G9/2031 ,  H01L51/0086 ,  Y02E10/542 ,  Y02P70/521

摘要： A dye-sensitized solar cell in which an insulating layer is formed on exposed surfaces of a semiconductor oxide layer in a semiconductor electrode and a conductive substrate, and a method of manufacturing the dye-sensitized solar cell are provided. The dye-sensitized solar cell includes a semiconductor electrode and an opposing electrode disposed to face each other, and an electrolyte solution interposed between the electrodes. The semiconductor electrode includes a conductive substrate, a semiconductor oxide layer formed on the semiconductor electrode, a dye molecule layer adhered to the surface of the semiconductor oxide layer, and an insulating layer formed on the surfaces of the semiconductor oxide layer exposed through the dye molecule layer and the conductive substrate. The insulating layer is formed of a self-assembling organic layer which is self-assembled on the surfaces of the semiconductor oxide layer and the conductive substrate by a chemical bond.

摘要翻译： 提供了在半导体电极和导电性基板中的半导体氧化物层的露出面上形成绝缘层的染料敏化太阳能电池，以及染料敏化太阳能电池的制造方法。 染料敏化太阳能电池包括设置成彼此面对的半导体电极和相对电极，以及插在电极之间的电解质溶液。 半导体电极包括导电基板，形成在半导体电极上的半导体氧化物层，粘附到半导体氧化物层的表面的染料分子层，以及形成在通过染料分子暴露的半导体氧化物层的表面上的绝缘层 层和导电基板。 绝缘层由自组装有机层形成，其通过化学键自组装在半导体氧化物层和导电基板的表面上。

公开(公告)号：US20120198918A1

公开(公告)日：2012-08-09

申请号：US13345772

申请日：2012-01-09

申请人： Seung Eon MOON ,  Jae Woo LEE ,  Nak Jin CHOI ,  Hyung Kun LEE ,  Woo Seok YANG ,  Jong Dae KIM

发明人： Seung Eon MOON ,  Jae Woo LEE ,  Nak Jin CHOI ,  Hyung Kun LEE ,  Woo Seok YANG ,  Jong Dae KIM

IPC分类号： G01N27/04 ,  H01L21/02

CPC分类号： G01N27/128 ,  G01N27/123

摘要： Disclosed are an MEMS type semiconductor gas sensor using a microheater having many holes and a method for manufacturing the same. The MEMS type semiconductor gas sensor includes: a substrate of which a central region is etched with a predetermined thickness; a second membrane formed at an upper portion of the central region of the substrate and having many holes; a heat emitting resistor formed on the second membrane and having many holes; a first membrane formed on the second membrane including the heat emitting resistor and having many holes; a sensing electrode formed on the first membrane and having many holes; and a sensing material formed on the sensing electrode.

摘要翻译： 公开了使用具有许多孔的微加热器的MEMS型半导体气体传感器及其制造方法。 MEMS型半导体气体传感器包括：以预定厚度蚀刻中心区域的基板; 第二膜，形成在所述基板的中心区域的上部并具有许多孔; 形成在第二膜上并具有许多孔的发热电阻器; 形成在包括所述发热电阻器并具有许多孔的所述第二膜上的第一膜; 形成在第一膜上并具有许多孔的感测电极; 以及感测材料，形成在感测电极上。