公开(公告)号：US07514777B2

公开(公告)日：2009-04-07

申请号：US11566274

申请日：2006-12-04

申请人： Yasuto Kawaguchi ,  Yukimasa Hayashida

发明人： Yasuto Kawaguchi ,  Yukimasa Hayashida

IPC分类号： H01L23/34

CPC分类号： H01L23/5385 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/162 ,  H01L25/18 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A power semiconductor module of the present invention comprises: a heat sink 1; a circuit substrate 2 mounted on the heat sink 1; a conductive pattern 10 provided on the circuit substrate 2; a low dielectric constant film 11 covering the conductive pattern 10; a case 7 provided on the heat sink 1 so as to enclose the circuit substrate 2; and a soft insulator 9 filling the space within the case 7. The low dielectric constant film 11 is preferably formed of silicon rubber, polyimide, or epoxy resin.

摘要翻译： 本发明的功率半导体模块包括：散热器1; 安装在散热器1上的电路基板2; 设置在电路基板2上的导电图案10; 覆盖导电图案10的低介电常数膜11; 设置在散热器1上以包围电路基板2的壳体7; 以及填充壳体7内的空间的软绝缘体9.低介电常数膜11优选由硅橡胶，聚酰亚胺或环氧树脂形成。

公开(公告)号：US20110249407A1

公开(公告)日：2011-10-13

申请号：US12910231

申请日：2010-10-22

申请人： Yasuto Kawaguchi

发明人： Yasuto Kawaguchi

IPC分类号： H01L23/34 ,  H05K7/20

CPC分类号： H01L23/24 ,  H01L23/053 ,  H01L23/3121 ,  H01L23/3185 ,  H01L23/367 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/27013 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83951 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/07025 ,  H01L2924/00012

摘要： A power semiconductor module comprises: a heat dissipation plate; an insulating wiring board having an upper electrode and a lower electrode, the lower electrode joined to the heat dissipation plate via a first solder; a semiconductor chip joined to the upper electrode via a second solder; a first low-dielectric film coating sides of the lower electrode and the first solder; a second low-dielectric film coating sides of the semiconductor chip and the second solder; a case on the heat dissipation plate and surrounding the insulating wiring board and the semiconductor chip; and an insulator filled in the case and coating the insulating wiring board, the semiconductor chip, and the first and second low-dielectric films.

摘要翻译： 功率半导体模块包括：散热板; 绝缘布线板，具有上电极和下电极，所述下电极经由第一焊料与所述散热板接合; 通过第二焊料与上电极接合的半导体芯片; 下电极和第一焊料的第一低介电膜涂层; 半导体芯片和第二焊料的第二低电介质膜涂层; 在散热板上并围绕绝缘布线板和半导体芯片的情况; 以及填充在所述壳体中并且涂覆所述绝缘布线板，所述半导体芯片以及所述第一和第二低介电膜的绝缘体。

公开(公告)号：US08558361B2

公开(公告)日：2013-10-15

申请号：US12910231

申请日：2010-10-22

申请人： Yasuto Kawaguchi

发明人： Yasuto Kawaguchi

IPC分类号： H01L23/495

CPC分类号： H01L23/24 ,  H01L23/053 ,  H01L23/3121 ,  H01L23/3185 ,  H01L23/367 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/27013 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32227 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83951 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/07025 ,  H01L2924/00012

摘要： A power semiconductor module comprises: a heat dissipation plate; an insulating wiring board having an upper electrode and a lower electrode, the lower electrode joined to the heat dissipation plate via a first solder; a semiconductor chip joined to the upper electrode via a second solder; a first low-k dielectric film coating sides of the lower electrode and the first solder; a second low-k dielectric film coating sides of the semiconductor chip and the second solder; a case on the heat dissipation plate and surrounding the insulating wiring board and the semiconductor chip; and an insulator filled in the case and coating the insulating wiring board, the semiconductor chip, and the first and second low-k dielectric films.

摘要翻译： 功率半导体模块包括：散热板; 绝缘布线板，具有上电极和下电极，所述下电极经由第一焊料与所述散热板接合; 通过第二焊料与上电极接合的半导体芯片; 下电极和第一焊料的第一低k电介质膜涂层; 半导体芯片和第二焊料的第二低k电介质膜涂层; 在散热板上并围绕绝缘布线板和半导体芯片的情况; 以及填充在壳体中并且涂覆绝缘布线板，半导体芯片以及第一和第二低k电介质膜的绝缘体。