DEVICE AND METHOD FOR MEASURING ELECTROMECHANICAL PROPERTIES AND MICROSTRUCTURE OF NANO-MATERIALS UNDER STRESS STATE
    1.
    发明申请
    DEVICE AND METHOD FOR MEASURING ELECTROMECHANICAL PROPERTIES AND MICROSTRUCTURE OF NANO-MATERIALS UNDER STRESS STATE 失效
    用于测量应力状态下纳米材料的机械性能和微结构的装置和方法

    公开(公告)号:US20100154557A1

    公开(公告)日:2010-06-24

    申请号:US12632597

    申请日:2009-12-07

    CPC classification number: G01N3/08 G01N2203/0282 G01N2203/0286

    Abstract: A device for measuring electromechanical properties and microstructure of nano-materials under stress state comprises two bimetallic strips placed on an insulated metal ring plated with insulating paint, wherein the two bimetallic strips are placed in parallel or V-shaped to insulated metal ring on the same plane, one end of each bimetallic strip is fixed on the insulated metal ring, the other end of the bimetallic strip hangs inside of the insulated ring, the distance of two bimetallic strips were controlled within 0.002-1 mm. Also provided is a method for measuring electromechanical properties and microstructure of nano-materials under stress state.

    Abstract translation: 用于测量纳米材料在应力状态下的机电性能和显微组织的装置包括两个双金属条,放置在镀有绝缘涂料的绝缘金属环上,其中两个双金属条被放置在平行的或V形的绝缘金属环上 每个双金属条的一端固定在绝缘金属环上,双金属条的另一端悬挂在绝缘环的内部,两个双金属条的距离控制在0.002-1mm之内。 还提供了一种用于在应力状态下测量纳米材料的机电性能和微结构的方法。

    Device and method for measuring electromechanical properties and microstructure of nano-materials under stress state
    2.
    发明授权
    Device and method for measuring electromechanical properties and microstructure of nano-materials under stress state 失效
    纳米材料在应力状态下机电性能和显微组织的测量装置及方法

    公开(公告)号:US08069733B2

    公开(公告)日:2011-12-06

    申请号:US12632597

    申请日:2009-12-07

    CPC classification number: G01N3/08 G01N2203/0282 G01N2203/0286

    Abstract: A device for measuring electromechanical properties and microstructure of nano-materials under stress state comprises two bimetallic strips placed on an insulated metal ring plated with insulating paint, wherein the two bimetallic strips are placed in parallel or V-shaped to insulated metal ring on the same plane, one end of each bimetallic strip is fixed on the insulated metal ring, the other end of the bimetallic strip hangs inside of the insulated ring, the distance of two bimetallic strips were controlled within 0.002-1 mm. Also provided is a method for measuring electromechanical properties and microstructure of nano-materials under stress state.

    Abstract translation: 用于测量纳米材料在应力状态下的机电性能和显微组织的装置包括两个双金属条,放置在镀有绝缘涂料的绝缘金属环上,其中两个双金属条被放置在平行的或V形的绝缘金属环上 每个双金属条的一端固定在绝缘金属环上,双金属条的另一端悬挂在绝缘环的内部,两个双金属条的距离控制在0.002-1mm之内。 还提供了一种用于在应力状态下测量纳米材料的机电性能和微结构的方法。

    Double tilt transmission electron microscope sample holder for in-situ measurement of microstructures
    3.
    发明授权
    Double tilt transmission electron microscope sample holder for in-situ measurement of microstructures 有权
    双倾斜透射电子显微镜样品架用于原位测量微结构

    公开(公告)号:US08569714B2

    公开(公告)日:2013-10-29

    申请号:US13519291

    申请日:2011-07-11

    Abstract: A double tilt sample holder for in-situ measuring mechanical and electrical properties of microstructures in transmission electron microscope (TEM) is provided. The sample holder includes a home-made hollow sample holder body, a sensor for measuring mechanical/electrical properties, a pressing piece, a sample holder head, a sensor carrier. The sensor for measuring mechanical/electrical properties is fixed on the sensor carrier on the sample holder head by the pressing piece, while the sensor carrier is connected to the sample holder head through a pair of supporting shafts located on sides of the sample holder head. The sensor carrier can tilt within the plane perpendicular to the ample holder head by revolving around the supporting shafts (i.e. tilting along Y axis at an angle of ±30°). The sample holder also allows obtaining mechanical/electrical parameters concurrently.

    Abstract translation: 提供了一种用于在透射电子显微镜(TEM)中原位测量微结构的机械和电学性能的双倾斜样品架。 样品架包括自制的中空样品保持器主体,用于测量机械/电气特性的传感器,按压件,样品架头,传感器载体。 用于测量机械/电气性能的传感器通过按压件固定在样品架头上的传感器载体上,而传感器载体通过位于样品架头侧面的一对支撑轴连接到样品架头。 通过围绕支撑轴旋转(即,沿着Y轴以±30°的角度倾斜),传感器载体可以在与大量保持器头部垂直的平面内倾斜。 样品架也可以同时获得机械/电气参数。

    Double Tilt Transmission Electron Microscope Sample Holder for In-Situ Measurement of Microstructures
    4.
    发明申请
    Double Tilt Transmission Electron Microscope Sample Holder for In-Situ Measurement of Microstructures 有权
    双倾斜透射电子显微镜样品架,用于原位测量微结构

    公开(公告)号:US20130105706A1

    公开(公告)日:2013-05-02

    申请号:US13519291

    申请日:2011-07-11

    Abstract: A double tilt sample holder for in-situ measuring mechanical and electrical properties of microstructures in transmission electron microscope (TEM) is provided. The sample holder includes a home-made hollow sample holder body, a sensor for measuring mechanical/electrical properties, a pressing piece, a sample holder head, a sensor carrier. The sensor for measuring mechanical/electrical properties is fixed on the sensor carrier on the sample holder head by the pressing piece, while the sensor carrier is connected to the sample holder head through a pair of supporting shafts located on sides of the sample holder head. The sensor carrier can tilt within the plane perpendicular to the ample holder head by revolving around the supporting shafts (i.e. tilting along Y axis at an angle of ±30°). The sample holder also allows obtaining mechanical/electrical parameters concurrently.

    Abstract translation: 提供了一种用于在透射电子显微镜(TEM)中原位测量微结构的机械和电学性能的双倾斜样品架。 样品架包括自制的中空样品保持器主体,用于测量机械/电气特性的传感器,按压件,样品架头,传感器载体。 用于测量机械/电气性能的传感器通过按压件固定在样品架头上的传感器载体上,而传感器载体通过位于样品架头侧面的一对支撑轴连接到样品架头。 通过围绕支撑轴旋转(即,沿着Y轴以±30°的角度倾斜),传感器载体可以在与大量保持器头部垂直的平面内倾斜。 样品架也可以同时获得机械/电气参数。

    Sensor for quantitative measurement of electromechanical properties and microstructure of nano-materials and method for making the same
    5.
    发明授权
    Sensor for quantitative measurement of electromechanical properties and microstructure of nano-materials and method for making the same 有权
    用于定量测量纳米材料机电性能和显微组织的传感器及其制备方法

    公开(公告)号:US08302494B2

    公开(公告)日:2012-11-06

    申请号:US12756131

    申请日:2010-04-07

    Abstract: A sensor for quantitative testing electromechanical properties and microstructure of nano-materials and a manufacturing method for the sensor are provided. The sensor comprises a suspended structure, pressure-sensitive resistor cantilevers, support beams, bimetallic strip and other components. When the bimetallic strip produces bending deformation, one of the pressure-sensitive resistor cantilevers is actuated and then stretches the low-dimensional nano-materials which drive the other pressure-sensitive resistor cantilever to bend. Through signal changes are outputted by the Wheatstone bridge, the variable stresses of low-dimensional nano-materials are obtained. Meanwhile, the variable strains of low-dimensional nano-materials are obtained by the horizontal displacements between two cantilevers, so the stress-strain curves of low-dimensional nano-materials are worked out. When the low-dimensional nano-materials are measured in the power state, the voltage-current curves are also obtained. In addition, by the help of high resolution imaging system in the transmission electron microscopy, the mechanical-electrical-microstructure relationship of the nano-materials can be recorded in situ and in atomic lattice resolution.

    Abstract translation: 提供了用于定量测量纳米材料的机电性能和微结构的传感器以及用于传感器的制造方法。 传感器包括悬挂结构,压敏电阻悬臂,支撑梁,双金属条等部件。 当双金属条产生弯曲变形时,压敏电阻悬臂之一被致动,然后拉伸驱动另一个压敏电阻悬臂弯曲的低维纳米材料。 通过惠斯通电桥输出的信号变化,得到了低维纳米材料的可变应力。 同时,通过两个悬臂之间的水平位移获得了低维纳米材料的可变应变,得出了低维纳米材料的应力 - 应变曲线。 当在功率状态下测量低维纳米材料时,也获得电压 - 电流曲线。 此外,通过透射电子显微镜中的高分辨率成像系统的帮助,可以原位和原子晶格分辨率记录纳米材料的机械 - 电 - 微结构关系。

    Method and system for channel estimation processing for interference suppression
    8.
    发明授权
    Method and system for channel estimation processing for interference suppression 有权
    用于干扰抑制的信道估计处理方法及系统

    公开(公告)号:US08358610B2

    公开(公告)日:2013-01-22

    申请号:US12615237

    申请日:2009-11-09

    CPC classification number: H04L27/00 H04B1/7107 H04B1/7115 H04L25/0204

    Abstract: Aspects of a method and system for channel estimation for interference suppression are provided. In this regard, one or more circuits and/or processors of a mobile communication device may generate and/or receive a first set of channel estimates and a second set of channel estimates. The one or more circuits and/or processors may modify the second set of channel estimates based on a comparison of a measure of correlation between the first set of channel estimates and the second set of channel estimates with a threshold. The first set of channel estimates and/or the modified second set of channel estimates may be utilized for cancelling interference in received signals. The first set of channel estimates may be associated with a first transmit antenna of a base transceiver station and the second set of channel estimates may be associated with a second transmit antenna of the base transceiver station.

    Abstract translation: 提供了用于干扰抑制的信道估计的方法和系统的方面。 在这点上,移动通信设备的一个或多个电路和/或处理器可以生成和/或接收第一组信道估计和第二组信道估计。 一个或多个电路和/或处理器可以基于第一组信道估计与具有阈值的第二组信道估计之间的相关度的比较来修改第二组信道估计。 可以利用第一组信道估计和/或修改的第二组信道估计来消除接收信号中的干扰。 第一组信道估计可以与基站收发台的第一发射天线相关联,并且第二组信道估计可以与基站的第二发射天线相关联。

    Method for treatment of samples for transmission electron microscopes
    9.
    发明授权
    Method for treatment of samples for transmission electron microscopes 有权
    透射电子显微镜样品处理方法

    公开(公告)号:US07923683B2

    公开(公告)日:2011-04-12

    申请号:US12258965

    申请日:2008-10-27

    CPC classification number: G01N1/286 G01N2001/2873 G01N2033/0095 H01L22/12

    Abstract: A method for analyzing a sample for the manufacture of integrated circuits, e.g., dynamic random access memory devices, commonly called DRAMS. The method also provides an integrated chip including a thickness, a width, and a length. In a specific embodiment, the integrated chip has at least one elongated structure through a portion of the thickness, while being normal to the width and the length. In a specific embodiment, the elongated structure has a structure width and a structure length that extends through a vertical portion of the thickness. The method includes removing a slice of the integrated chip from a portion of the thickness in a directional manner normal to the structure length. In a specific embodiment, the slice is provided through an entirety of the one elongated structure along the structure length to cause a portion of a thickness of the slice providing the elongated structure to be of a substantially uniform sample thickness. The method also includes capturing one or more images through a portion of the slice using a transmission electron microscope.

    Abstract translation: 用于分析用于制造集成电路的样本的方法,例如通常称为DRAMS的动态随机存取存储器件。 该方法还提供了包括厚度,宽度和长度的集成芯片。 在具体实施例中,集成芯片具有穿过厚度的一部分的至少一个细长结构,同时垂直于宽度和长度。 在具体实施例中,细长结构具有延伸穿过厚度的垂直部分的结构宽度和结构长度。 该方法包括以垂直于结构长度的定向方式从厚度的一部分去除集成芯片的切片。 在一个具体的实施例中,切片沿着结构长度通过整个一个细长结构提供,以使切片的厚度的一部分提供细长结构,使其具有基本均匀的样本厚度。 该方法还包括使用透射电子显微镜捕获通过切片的一部分的一个或多个图像。

    Unified STTD/CLTD dedicated pilot processing
    10.
    发明授权
    Unified STTD/CLTD dedicated pilot processing 有权
    统一STTD / CLTD专用导频处理

    公开(公告)号:US07877071B2

    公开(公告)日:2011-01-25

    申请号:US11964066

    申请日:2007-12-26

    CPC classification number: H04B7/0871 H04L5/0051 H04L25/0226

    Abstract: Apparatus and method to provide unified STTD/CLTD dedicated pilot processing in a wireless receiver. The technique allows different set of parameters to be introduced to a same processing module to process STTD and CLTD diversity signals to recover a pilot signal. Introducing another set of parameters to the processing module also allows processing of a non-diversity signal to recover a pilot. The unified processing of STTD/CLTD signals is achieved by converting STTD/CLTD pilot bits as Hadamard-like bits and processing these bits along with orthogonal pilot bits which are encoded as Hadamard encoded bits.

    Abstract translation: 在无线接收机中提供统一的STTD / CLTD专用导频处理的装置和方法。 该技术允许将不同的参数集合引入相同的处理模块来处理STTD和CLTD分集信号以恢复导频信号。 向处理模块引入另一组参数还允许处理非分集信号以恢复导频。 将STTD / CLTD信号的统一处理通过将STTD / CLTD导频位转换为Hadamard类比特并且将这些比特以及被编码为Hadamard编码比特的正交导频比特一起处理来实现。

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