Abstract:
A device for measuring electromechanical properties and microstructure of nano-materials under stress state comprises two bimetallic strips placed on an insulated metal ring plated with insulating paint, wherein the two bimetallic strips are placed in parallel or V-shaped to insulated metal ring on the same plane, one end of each bimetallic strip is fixed on the insulated metal ring, the other end of the bimetallic strip hangs inside of the insulated ring, the distance of two bimetallic strips were controlled within 0.002-1 mm. Also provided is a method for measuring electromechanical properties and microstructure of nano-materials under stress state.
Abstract:
A device for measuring electromechanical properties and microstructure of nano-materials under stress state comprises two bimetallic strips placed on an insulated metal ring plated with insulating paint, wherein the two bimetallic strips are placed in parallel or V-shaped to insulated metal ring on the same plane, one end of each bimetallic strip is fixed on the insulated metal ring, the other end of the bimetallic strip hangs inside of the insulated ring, the distance of two bimetallic strips were controlled within 0.002-1 mm. Also provided is a method for measuring electromechanical properties and microstructure of nano-materials under stress state.
Abstract:
A double tilt sample holder for in-situ measuring mechanical and electrical properties of microstructures in transmission electron microscope (TEM) is provided. The sample holder includes a home-made hollow sample holder body, a sensor for measuring mechanical/electrical properties, a pressing piece, a sample holder head, a sensor carrier. The sensor for measuring mechanical/electrical properties is fixed on the sensor carrier on the sample holder head by the pressing piece, while the sensor carrier is connected to the sample holder head through a pair of supporting shafts located on sides of the sample holder head. The sensor carrier can tilt within the plane perpendicular to the ample holder head by revolving around the supporting shafts (i.e. tilting along Y axis at an angle of ±30°). The sample holder also allows obtaining mechanical/electrical parameters concurrently.
Abstract:
A double tilt sample holder for in-situ measuring mechanical and electrical properties of microstructures in transmission electron microscope (TEM) is provided. The sample holder includes a home-made hollow sample holder body, a sensor for measuring mechanical/electrical properties, a pressing piece, a sample holder head, a sensor carrier. The sensor for measuring mechanical/electrical properties is fixed on the sensor carrier on the sample holder head by the pressing piece, while the sensor carrier is connected to the sample holder head through a pair of supporting shafts located on sides of the sample holder head. The sensor carrier can tilt within the plane perpendicular to the ample holder head by revolving around the supporting shafts (i.e. tilting along Y axis at an angle of ±30°). The sample holder also allows obtaining mechanical/electrical parameters concurrently.
Abstract:
A sensor for quantitative testing electromechanical properties and microstructure of nano-materials and a manufacturing method for the sensor are provided. The sensor comprises a suspended structure, pressure-sensitive resistor cantilevers, support beams, bimetallic strip and other components. When the bimetallic strip produces bending deformation, one of the pressure-sensitive resistor cantilevers is actuated and then stretches the low-dimensional nano-materials which drive the other pressure-sensitive resistor cantilever to bend. Through signal changes are outputted by the Wheatstone bridge, the variable stresses of low-dimensional nano-materials are obtained. Meanwhile, the variable strains of low-dimensional nano-materials are obtained by the horizontal displacements between two cantilevers, so the stress-strain curves of low-dimensional nano-materials are worked out. When the low-dimensional nano-materials are measured in the power state, the voltage-current curves are also obtained. In addition, by the help of high resolution imaging system in the transmission electron microscopy, the mechanical-electrical-microstructure relationship of the nano-materials can be recorded in situ and in atomic lattice resolution.
Abstract:
Aspects of a method and system for channel estimation for interference suppression are provided. In this regard, one or more circuits and/or processors of a mobile communication device may generate and/or receive a first set of channel estimates and a second set of channel estimates. The one or more circuits and/or processors may modify the second set of channel estimates based on a comparison of a measure of correlation between the first set of channel estimates and the second set of channel estimates with a threshold. The first set of channel estimates and/or the modified second set of channel estimates may be utilized for cancelling interference in received signals. The first set of channel estimates may be associated with a first transmit antenna of a base transceiver station and the second set of channel estimates may be associated with a second transmit antenna of the base transceiver station.
Abstract:
A method for analyzing a sample for the manufacture of integrated circuits, e.g., dynamic random access memory devices, commonly called DRAMS. The method also provides an integrated chip including a thickness, a width, and a length. In a specific embodiment, the integrated chip has at least one elongated structure through a portion of the thickness, while being normal to the width and the length. In a specific embodiment, the elongated structure has a structure width and a structure length that extends through a vertical portion of the thickness. The method includes removing a slice of the integrated chip from a portion of the thickness in a directional manner normal to the structure length. In a specific embodiment, the slice is provided through an entirety of the one elongated structure along the structure length to cause a portion of a thickness of the slice providing the elongated structure to be of a substantially uniform sample thickness. The method also includes capturing one or more images through a portion of the slice using a transmission electron microscope.
Abstract:
Apparatus and method to provide unified STTD/CLTD dedicated pilot processing in a wireless receiver. The technique allows different set of parameters to be introduced to a same processing module to process STTD and CLTD diversity signals to recover a pilot signal. Introducing another set of parameters to the processing module also allows processing of a non-diversity signal to recover a pilot. The unified processing of STTD/CLTD signals is achieved by converting STTD/CLTD pilot bits as Hadamard-like bits and processing these bits along with orthogonal pilot bits which are encoded as Hadamard encoded bits.