METHOD FOR TREATMENT OF SAMPLES FOR TRANSMISSION ELECTRONIC MICROSCOPES
    1.
    发明申请
    METHOD FOR TREATMENT OF SAMPLES FOR TRANSMISSION ELECTRONIC MICROSCOPES 有权
    用于处理传输电子显微镜样品的方法

    公开(公告)号:US20100006754A1

    公开(公告)日:2010-01-14

    申请号:US12258965

    申请日:2008-10-27

    CPC classification number: G01N1/286 G01N2001/2873 G01N2033/0095 H01L22/12

    Abstract: A method for analyzing a sample for the manufacture of integrated circuits, e.g., dynamic random access memory device, commonly called, DRAMS. The method also provides an integrated chip including a thickness, a width, and a length. In a specific embodiment, the integrated chip has at least one elongated structure through a portion of the thickness, while being normal to the width and the length. In a specific embodiment, the elongated structure has a structure width and a structure length that extends through a vertical portion of the thickness. The method includes removing a slice of the integrated circuit chip from a portion of the thickness in a directional manner normal to the structure length. In a specific embodiment, the slice is provided through an entirety of the one elongated structure along the structure length to cause a portion of a thickness of the slice providing the elongated structure to be of a substantially uniform sample thickness. The method also includes capturing one or more images through a portion of the slice using a transmission electron

    Abstract translation: 用于分析用于制造集成电路的样本的方法,例如通常称为DRAMS的动态随机存取存储器件。 该方法还提供了包括厚度,宽度和长度的集成芯片。 在具体实施例中,集成芯片具有穿过厚度的一部分的至少一个细长结构,同时垂直于宽度和长度。 在具体实施例中,细长结构具有延伸穿过厚度的垂直部分的结构宽度和结构长度。 该方法包括以垂直于结构长度的定向方式从该厚度的一部分去除集成电路芯片的切片。 在一个具体的实施例中,切片沿着结构长度通过整个一个细长结构提供,以使切片的厚度的一部分提供细长结构,使其具有基本均匀的样本厚度。 该方法还包括使用透射电子通过片的一部分捕获一个或多个图像

    Method for treatment of samples for transmission electron microscopes
    2.
    发明授权
    Method for treatment of samples for transmission electron microscopes 有权
    透射电子显微镜样品处理方法

    公开(公告)号:US07923683B2

    公开(公告)日:2011-04-12

    申请号:US12258965

    申请日:2008-10-27

    CPC classification number: G01N1/286 G01N2001/2873 G01N2033/0095 H01L22/12

    Abstract: A method for analyzing a sample for the manufacture of integrated circuits, e.g., dynamic random access memory devices, commonly called DRAMS. The method also provides an integrated chip including a thickness, a width, and a length. In a specific embodiment, the integrated chip has at least one elongated structure through a portion of the thickness, while being normal to the width and the length. In a specific embodiment, the elongated structure has a structure width and a structure length that extends through a vertical portion of the thickness. The method includes removing a slice of the integrated chip from a portion of the thickness in a directional manner normal to the structure length. In a specific embodiment, the slice is provided through an entirety of the one elongated structure along the structure length to cause a portion of a thickness of the slice providing the elongated structure to be of a substantially uniform sample thickness. The method also includes capturing one or more images through a portion of the slice using a transmission electron microscope.

    Abstract translation: 用于分析用于制造集成电路的样本的方法,例如通常称为DRAMS的动态随机存取存储器件。 该方法还提供了包括厚度,宽度和长度的集成芯片。 在具体实施例中,集成芯片具有穿过厚度的一部分的至少一个细长结构,同时垂直于宽度和长度。 在具体实施例中,细长结构具有延伸穿过厚度的垂直部分的结构宽度和结构长度。 该方法包括以垂直于结构长度的定向方式从厚度的一部分去除集成芯片的切片。 在一个具体的实施例中,切片沿着结构长度通过整个一个细长结构提供,以使切片的厚度的一部分提供细长结构,使其具有基本均匀的样本厚度。 该方法还包括使用透射电子显微镜捕获通过切片的一部分的一个或多个图像。

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