公开(公告)号：US08999835B2

公开(公告)日：2015-04-07

申请号：US13410273

申请日：2012-03-01

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： H01L27/02 ,  H01L23/60 ,  H01L23/00

CPC分类号： H01L27/0248 ,  H01L23/60 ,  H01L24/05 ,  H01L2924/14 ,  H01L2924/00

摘要： A method of fabricating ESD suppression device includes forming conductive pillars dispersed in a dielectric material. The gaps formed between each pillar in the device behave like spark gaps when a high voltage ESD pulse occurs. When the voltage of the pulse reaches the “trigger voltage” these gaps spark over, creating a very low resistance path. In normal operation, the leakage current and the capacitance is very low, due to the physical gaps between the conductive pillars. The proposed method for fabricating an ESD suppression device includes micromachining techniques to be on-chip with device ICs.

摘要翻译： 制造ESD抑制装置的方法包括形成分散在电介质材料中的导电柱。 当发生高电压ESD脉冲时，器件中每个支柱之间形成的间隙就像火花隙。 当脉冲电压达到“触发电压”时，这些间隙发生火花，产生非常低的电阻路径。 在正常工作中，由于导电柱之间的物理间隙，漏电流和电容非常低。 所提出的用于制造ESD抑制器件的方法包括使用器件IC片上的微加工技术。

公开(公告)号：US08071398B1

公开(公告)日：2011-12-06

申请号：US12634634

申请日：2009-12-09

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： G01R31/26

CPC分类号： B81C1/00246

摘要： The present invention relates to integrating an inertial mechanical device on top of an IC substrate monolithically using IC-foundry compatible processes. The IC substrate is completed first using standard IC processes. A thick silicon layer is added on top of the IC substrate. A subsequent patterning step defines a mechanical structure for inertial sensing. Finally, the mechanical device is encapsulated by a thick insulating layer at the wafer level. Compared with the incumbent bulk or surface micromachined MEMS inertial sensors, vertically monolithically integrated inertial sensors provided by embodiments of the present invention have one or more of the following advantages: smaller chip size, lower parasitics, higher sensitivity, lower power, and lower cost.

摘要翻译： 本发明涉及使用IC代工厂兼容的工艺将惯性机械装置整体集成在IC基板上。 首先使用标准IC工艺完成IC基板。 将厚硅层添加到IC基板的顶部。 随后的图案化步骤限定了用于惯性感测的机械结构。 最后，机械装置由晶圆级的厚绝缘层封装。 与现有的本体或表面微加工MEMS惯性传感器相比，本发明实施例提供的垂直单片集成惯性传感器具有以下一个或多个优点：较小的芯片尺寸，较低的寄生效应，更高的灵敏度，更低的功率和更低的成本。

公开(公告)号：US20070102035A1

公开(公告)日：2007-05-10

申请号：US11554496

申请日：2006-10-30

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： H02N6/00

CPC分类号： H01L31/0749 ,  G02F1/133512 ,  G02F2001/13324 ,  G02F2001/133562 ,  G02F2001/133565 ,  H01L31/0296 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0543 ,  Y02E10/52 ,  Y02E10/541 ,  Y02E10/546 ,  Y02E10/548

摘要： The present invention relates to a method and device for integrating solar cell on LCD panels for photovoltaic electricity generation for portable electronic devices. According to one embodiment of the present invention, the black matrix region on the color filter substrate in a LCD panel is replaced by a solar cell region. A lens array substrate is coupled between the light source layer and the TFT to focus the backlight to increase the solar cell layer area while maintaining high fill ratio of the LCD pixels. The solar cell material is selected from at least silicon, a single crystal silicon, poly-crystalline silicon, amorphous silicon, gallium arsenide, cadmium telluride, copper indium diselenide, organic/inorganic, or hybrid cells. The substrate material is selected from glass, metal, plastic or polymer.

摘要翻译： 本发明涉及将太阳能电池集成在用于便携式电子设备的光伏发电的LCD面板上的方法和装置。 根据本发明的一个实施例，LCD面板上的滤色器基板上的黑矩阵区域被太阳能电池区域代替。 透镜阵列基板耦合在光源层和TFT之间以聚焦背光以增加太阳能电池层面积，同时保持LCD像素的高填充率。 太阳能电池材料至少选自硅，单晶硅，多晶硅，非晶硅，砷化镓，碲化镉，二硒化铜铟，有机/无机或混合电池。 基底材料选自玻璃，金属，塑料或聚合物。

公开(公告)号：US20070097551A1

公开(公告)日：2007-05-03

申请号：US11554503

申请日：2006-10-30

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： G11B5/48

CPC分类号： G11B5/4886 ,  B82Y10/00 ,  G11B7/08576 ,  G11B9/1454

摘要： The present invention provides a method and device for fabricating high density memory device. Similar to a Hard Disk Drive (HDD), the integrated memory device is consisted with a rotating media plate and a Read/Write (R/W) head on a movable suspension. Unlike HDD where the media plate is coupled to a motor, the media plate is micro fabricated on a semiconductor substrate and is also a motor which is actuated and rotated by electrostatic forces. The head suspension is also micro fabricated and anchored to an electrostatic comb drive micro actuator. Control IC can also be integrated on-chip with the integrated memory device as well as acceleration sensing devices such as MEMS accelerator for anti-shock measures. The integrated disk storage device is fabricated by conventional semiconductor and MEMS fabrication process technology.

摘要翻译： 本发明提供一种用于制造高密度存储器件的方法和装置。 与硬盘驱动器（HDD）类似，集成存储器件由可移动悬架上的旋转介质板和读/写（R / W）头组成。 与介质板耦合到电动机的HDD不同，介质板被微制造在半导体衬底上，并且也是由静电力驱动和旋转的电动机。 磁头悬架也是微型制造和锚定到静电梳状驱动微型致动器。 控制IC还可以集成在集成的存储器件以及加速度传感器件如MEMS加速器的抗冲击措施。 集成磁盘存储设备由传统的半导体和MEMS制造工艺技术制造。

公开(公告)号：US07109066B2

公开(公告)日：2006-09-19

申请号：US10947879

申请日：2004-09-22

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： H01L21/44

CPC分类号： B81B7/0067 ,  B81C2203/0118

摘要： A method for forming a patterned silicon bearing material, e.g., silicon substrate. The method includes providing a silicon substrate, which has a surface region and a backside region. The method includes forming a plurality of recessed regions on the surface region. Each of the plurality of recessed regions has a border region. Preferably, the plurality of recessed regions forms a patterned surface region. The method includes bonding (e.g., hermetic bonding or on-hermetic seal) the patterned surface region to a handle surface region of a handle substrate, e.g., glass substrate. Each of the border regions, which protrude outwardly from the recessed regions, is bonded to the handle surface region, while each of the recessed regions remain free from attachment to any surface of the handle surface region. The method includes etching selected regions on the backside to remove a thickness of silicon substrate overlying each of the recessed regions. The method also includes releasing a thickness of material defined within the recessed region while maintaining each of the border regions bonded to the handle surface region to form a plurality of silicon structures bonded to the handle surface region.

公开(公告)号：US08704238B2

公开(公告)日：2014-04-22

申请号：US13311538

申请日：2011-12-05

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： H01L31/036

CPC分类号： B81C1/00246

摘要： A three-dimensional integrated circuit device includes a first substrate having a first crystal orientation comprising at least one or more PMOS devices thereon and a first dielectric layer overlying the one or more PMOS devices. The three-dimensional integrated circuit device also includes a second substrate having a second crystal orientation comprising at least one or more NMOS devices thereon; and a second dielectric layer overlying the one or more NMOS devices. An interface region couples the first dielectric layer to the second dielectric layer to form a hybrid structure including the first substrate overlying the second substrate.

摘要翻译： 三维集成电路器件包括具有包括其上的至少一个或多个PMOS器件的第一晶体取向的第一衬底和覆盖所述一个或多个PMOS器件的第一电介质层。 三维集成电路器件还包括具有第二晶体取向的第二衬底，其上包括至少一个或多个NMOS器件; 以及覆盖所述一个或多个NMOS器件的第二电介质层。 接口区域将第一介电层耦合到第二介电层，以形成包括覆盖在第二基板上的第一基板的混合结构。

公开(公告)号：US08120076B2

公开(公告)日：2012-02-21

申请号：US12511004

申请日：2009-07-28

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14669 ,  H01L27/14627 ,  H01L27/14685 ,  H01L27/14692

摘要： Protection for infrared sensing device, and more particularly, to a monolithically integrated uncooled infrared sensing device using IC foundry compatible processes. The proposed infrared sensing device is fabricated on a completed IC substrate. In an embodiment, the infrared sensing device has a single crystal silicon plate with an absorbing layer supported a pair of springs. The absorbing layer absorbs infrared radiation and heats up the underlying silicon layer. As a result, an n well in the silicon layer changes its resistance related to its temperature coefficient of resistance (TCR). In another embodiment, the infrared sensing device has a top sensing plate supported by an underlying spring structures. The top sensing plate has sensing materials such as amorphous silicon, poly silicon, SiC, SiGe, Vanadium oxide, or YbaCuO. Finally, a micro lens array is placed on top of the sensing pixel array with a gap in between. In an embodiment, the micro lens array is fabricated on a silicon substrate and bonded to the sensing pixel array substrate. In another embodiment, the micro lens array is fabricated monolithically using amorphous silicon. The micro lens array layer encapsulates the pixel sensing array hermetically, preferably in a vacuum environment.

摘要翻译： 用于红外感测装置的保护，更具体地说，涉及使用IC代工厂兼容工艺的单片集成非制冷红外感测装置。 所提出的红外感测装置在完整的IC衬底上制造。 在一个实施例中，红外感测装置具有单晶硅板，其中吸收层支撑一对弹簧。 吸收层吸收红外辐射并加热下面的硅层。 结果，硅层中的n阱改变其与其温度电阻系数（TCR）相关的电阻。 在另一个实施例中，红外感测装置具有由下面的弹簧结构支撑的顶部感测板。 顶部感测板具有非晶硅，多晶硅，SiC，SiGe，氧化钒或YbaCuO等感测材料。 最后，微透镜阵列放置在感测像素阵列的顶部，其间有间隙。 在一个实施例中，微透镜阵列制造在硅衬底上并结合到感测像素阵列衬底。 在另一个实施例中，微透镜阵列使用非晶硅单片制造。 微透镜阵列层优选地在真空环境中封装像素感测阵列。

公开(公告)号：US20070224548A1

公开(公告)日：2007-09-27

申请号：US11558441

申请日：2006-11-09

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： C23C16/00

CPC分类号： G03F7/203 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70383 ,  G03F7/70391 ,  H01J37/3174 ,  H01J2237/20228 ,  H01J2237/20235

摘要： According to a specific embodiment of the present invention, a mask-less lithography method and apparatus is provided. The apparatus includes an integrated write head on a slider with an air bearing that creates a lift force that allows that write head to fly over a spinning wafer substrate in nanometer distance without physical contact. The short distance between the write head and substrate prevents the light from diffracting. As a result, micro and nanometer structures can be patterned without being limited by light diffraction in conventional lithography methods.

摘要翻译： 根据本发明的具体实施例，提供了一种无掩模光刻方法和装置。 该装置包括具有空气轴承的滑块上的集成写头，其产生提升力，该提升力允许写头在纳米距离上飞过旋转晶片衬底而没有物理接触。 写头和基板之间的短距离防止光线衍射。 结果，微型和纳米结构可以被图案化，而不受传统光刻方法中的光衍射的限制。

公开(公告)号：US20070103009A1

公开(公告)日：2007-05-10

申请号：US11554515

申请日：2006-10-30

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： H02K5/00 ,  H02K7/02 ,  H02K21/22

CPC分类号： H02K7/025 ,  H02N1/004 ,  H02N13/00 ,  Y02E60/16

摘要： The present invention relates to a method and device for fabricating an integrated flywheel device using semiconductor materials and IC/MEMS processes. Single crystal silicon has high energy storage/weight ratio and no defects. Single crystal silicon flywheel can operate at much higher speed than conventional flywheel. The integrated silicon flywheel is operated by electrostatic motor and supported by electrostatic bearings, which consume much less power than magnetic actuation in conventional flywheel energy storage systems. The silicon flywheel device is fabricated by IC and MEMS processes to achieve high device integration and low manufacturing cost. For the integrated silicon flywheel, high vacuum can be achieved using hermetic bonding methods such as eutectic, fusion, glass frit, SOG, anodic, covalent, etc. To achieve larger energy capacity, an array of silicon flywheels is fabricated on one substrate. Multiple layers of flywheel energy storage devices are stacked.

摘要翻译： 本发明涉及使用半导体材料和IC / MEMS工艺制造集成飞轮装置的方法和装置。 单晶硅具有高能量存储/重量比，无缺陷。 单晶硅飞轮可以以比传统飞轮高得多的速度运行。 集成的硅飞轮由静电电动机驱动并由静电轴承支撑，在传统的飞轮储能系统中消耗的功率远低于磁力驱动。 硅飞轮器件由IC和MEMS工艺制造，以实现高器件集成度和低制造成本。 对于集成硅飞轮，可以使用诸如共晶，熔合，玻璃料，SOG，阳极，共价等的密封接合方法实现高真空。为了实现更大的能量容量，在一个基板上制造了硅飞轮阵列。 堆叠多层飞轮储能装置。

公开(公告)号：US08796746B2

公开(公告)日：2014-08-05

申请号：US12499027

申请日：2009-07-07

申请人： Xiao (Charles) Yang

发明人： Xiao (Charles) Yang

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： G01L9/0073 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2201/0192 ,  G01L9/0042 ,  G01L9/0054

摘要： A monolithically integrated MEMS pressure sensor and CMOS substrate using IC-Foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A diaphragm is then added on top of the CMOS. In one embodiment, the diaphragm is made of deposited thin films with stress relief corrugated structure. In another embodiment, the diaphragm is made of a single crystal silicon material that is layer transferred to the CMOS substrate. In an embodiment, the integrated pressure sensor is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated pressure sensor that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost.

摘要翻译： 使用IC-Foundry兼容工艺的单片集成MEMS压力传感器和CMOS衬底。 CMOS基板首先使用标准IC工艺完成。 然后将膜片添加到CMOS的顶部。 在一个实施例中，隔膜由具有应力消除波纹结构的沉积薄膜制成。 在另一个实施例中，膜片由层转移到CMOS衬底的单晶硅材料制成。 在一个实施例中，集成压力传感器由晶圆级的厚绝缘层封装。 采用IC代工兼容工艺的单片式压力传感器产生最高性能，最小的外形尺寸和最低的成本。