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公开(公告)号：US10319876B2
公开(公告)日：2019-06-11
申请号：US15327133
申请日：2017-01-05
Abstract: The present disclosure proposes a micro LED and a method of forming the same. After a body of layers to structure a PN junction is formed sequentially on the outer wall of a buffer layer column, a first electrode is formed on the outer side of the body of layers that structured the PN junction. A second electrode is formed on the inner side of the body of layers that structured the PN junction after the buffer layer column is removed. The first electrode and second electrode are insulating to each other in areas outside of the body of layers structuring the PN junction. The micro LED formed is of a tube structure. The tube-structured micro LED can effectively lower the impedance imposed by the body of layers structuring the PN junction between the first and second electrodes, and thus enhance conductivity and illumination efficiency of the micro LED.
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公开(公告)号：US09647012B1
公开(公告)日：2017-05-09
申请号：US15161260
申请日：2016-05-22
Inventor： Bo Liang
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L29/417 , H01L29/423
CPC classification number: H01L27/127 , H01L27/1225 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/66742 , H01L29/778 , H01L29/78681 , H01L29/78696
Abstract: The present disclosure provides a TFT array substrate and manufacturing method thereof, forming a class structure of graphene-like two-dimensional layered semiconductor material on a base substrate and transferring the class structure of graphene-like two-dimensional layered semiconductor material on the designated position of the soft substrate to be a semiconductor active layer of the array substrate, therefore the semiconductor active layer of the TFT array substrate of the present disclosure uses a class structure of graphene-like two-dimensional layered semiconductor material to makes the array substrate having the advantage of higher electron mobility and mechanical property, excellent flexural resistance and reducing thickness of the substrate greatly.
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3.发明授权公开(公告)号：US11004957B2
公开(公告)日：2021-05-11
申请号：US15540543
申请日：2017-05-23
Inventor： Bo Liang
IPC: H01L29/66 , H01L27/12 , H01L29/786 , H01L21/308 , H01L29/423 , H01L21/3065 , H01L27/32
Abstract: The present disclosure relates to a manufacturing method of inorganic thin film transistors (TFTs), including: forming a p-type semiconductor layer and a n-type semiconductor layer on a hard substrate in sequence, forming a slot on the p-type semiconductor layer, wherein the slot passes through the n-type semiconductor layer, forming a source and a drain on the n-type semiconductor layer, wherein the source and the drain are respectively configured on two sides of the slot, performing a flip-transferring process to transfer the p-type semiconductor layer, the n-type semiconductor layer, the source, and the drain on a flexible substrate, forming a gate insulation layer and a gate on the p-type semiconductor layer in sequence, forming a flat layer on the gate insulation layer, wherein the flat layer covers the gate. The inorganic TFT is designed to obtain a narrow channel inorganic TFT device, to reduce process requirements, and to reduce costs.
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Patent Agency Ranking
公开(公告)号：US10319925B2
公开(公告)日：2019-06-11
申请号：US15544015
申请日：2017-04-28
Abstract: The present application discloses a manufacturing method of an organic thin film transistor, comprising steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with organic solution and heating the graphene layer to form an organic semiconductor nano line on the surface of the graphene layer; and transferring the organic semiconductor nano line on a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by graphene layer. The semiconductor layer having organic thin film transistors are formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed at a time on the surface of the metal substrate with a large area.
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公开(公告)号：US10192954B2
公开(公告)日：2019-01-29
申请号：US15314057
申请日：2016-11-16
IPC: H01L29/06 , H01L29/10 , H01L21/308 , H01L29/786 , H01L29/08 , H01L29/423 , H01L21/3065 , H01L29/417 , H01L21/762 , H01L29/66 , B82Y10/00 , H01L29/775 , H01L21/02 , H01L21/324 , H01L21/3105
Abstract: A junctionless nanowire transistor and a manufacturing method for the same are disclosed. Two terminals of each of the channel nanowires disposed in the transistor are respectively connected with the source region and the drain region; the source region, the drain region and the channel nanowires uses a same doping material such that the on-state current of the transistor is increased, and the uniformity of the transistor is increased. Besides, the multiple channel nanowires are disposed above the active layer in a stacked arrangement to increase the integration of the transistor.
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公开(公告)号：US10756280B2
公开(公告)日：2020-08-25
申请号：US16254742
申请日：2019-01-23
Abstract: A method for manufacturing an organic thin film transistor includes steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with an organic solution and heating the graphene layer to form organic semiconductor nano lines on the surface of the graphene layer; and transferring the organic semiconductor nano lines to a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by the graphene layer. The semiconductor layer having organic thin film transistors is formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed simultaneously on the surface of the metal substrate with a large area.
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7.发明授权公开(公告)号：US10586835B2
公开(公告)日：2020-03-10
申请号：US16258768
申请日：2019-01-28
Inventor： Jhih-jie Huang , Bo Liang , Wei Wang
Abstract: A double-sided organic light-emitting display apparatus includes: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements and formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate. The top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The OLED display apparatus can serve as a double-sided display, and because of the use of the flexible substrate, it also has the advantage of easy carrying and flexibility.
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8.发明授权公开(公告)号：US10192940B2
公开(公告)日：2019-01-29
申请号：US15111230
申请日：2016-04-01
Inventor： Jhih-jie Huang , Bo Liang , Wei Wang
Abstract: The present application discloses a double sided organic light-emitting display apparatus, including: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate, wherein the top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The present application also provides a method of manufacturing the OLED display apparatus. The OLED display apparatus can achieve the double sided display, and because of its use of the flexible substrate, it also has the advantage of ease of carrying and flexible property.
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