公开(公告)号：US06342895B1

公开(公告)日：2002-01-29

申请号：US09221982

申请日：1998-12-29

Applicant: Woo-jin Kim

Inventor： Woo-jin Kim

IPC: G09G539

CPC classification number: H04N19/427 ,  H04N19/423 ,  H04N19/61

Abstract: A memory allocation method and apparatus is disclosed in which the macro blocks are grouped into a plurality block sets and stored in the memory as block set. By grouping and storing the macro blocks, an efficient reading of the data is achieved.

Abstract translation: 公开了一种存储器分配方法和装置，其中宏块被分组成多个块集合并作为块集存储在存储器中。 通过分组和存储宏块，实现数据的有效读取。

公开(公告)号：US09178135B2

公开(公告)日：2015-11-03

申请号：US14254858

申请日：2014-04-16

Applicant: Young-hyun Kim ,  Hee-ju Shin ,  Woo-jin Kim ,  Sang-hwan Park

Inventor： Young-hyun Kim ,  Hee-ju Shin ,  Woo-jin Kim ,  Sang-hwan Park

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.

Abstract translation: 磁性装置可以包括隧道沐浴器和邻近隧道屏障设置的混合磁化层。 混合磁化层可以包括第一垂直磁各向异性（PMA）层，第二PMA层和设置在第一和第二PMA层之间的非晶形阻挡层。 第一PMA层可以包括多层膜，其中由Co形成的第一层和由Pt或Pd形成的第二层交替堆叠。 由与第一层和第二层不同的元素形成的第一掺杂剂也可以包括在第一PMA层中。 第二PMA层可以设置在第一PMA层和隧道势垒之间，并且可以包括选自由Co，Fe和Ni组成的组中的至少一种元素。

公开(公告)号：US20110149647A1

公开(公告)日：2011-06-23

申请号：US12926442

申请日：2010-11-18

Applicant: Kwang-seok Kim ,  Taek-dong Lee ,  Woo-jin Kim ,  Sun-ae Seo ,  Kee-won Kim ,  Sun-ok Kim

Inventor： Kwang-seok Kim ,  Taek-dong Lee ,  Woo-jin Kim ,  Sun-ae Seo ,  Kee-won Kim ,  Sun-ok Kim

IPC: G11C11/14 ,  H01L29/82 ,  H01L21/02

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: Provided are a perpendicular magnetic tunnel junction (MTJ), a magnetic device including the same, and a method of manufacturing the MTJ, the perpendicular MTJ includes a lower magnetic layer; a tunnelling layer on the lower magnetic layer; and an upper magnetic layer on the tunnelling layer. One of the upper and lower magnetic layers includes a free magnetic layer that exhibits perpendicular magnetic anisotropy, wherein the magnetizing direction of the free magnetic layer is changed by a spin polarization current. A polarization enhancing layer (PEL) and an exchange blocking layer (EBL) are stacked between the tunnelling layer and the free magnetic layer.

Abstract translation: 提供垂直磁性隧道结（MTJ），包括该垂直磁性隧道结（MTJ）的磁性装置以及制造MTJ的方法，垂直MTJ包括下部磁性层; 下层磁性层上的隧道层; 和隧道层上的上层磁性层。 上下磁性层中的一个包括具有垂直磁各向异性的自由磁性层，其中自由磁性层的磁化方向由自旋极化电流改变。 极化增强层（PEL）和交换阻挡层（EBL）堆叠在隧穿层和自由磁性层之间。