Abstract:
A thin film transistor includes a low resistance metal film covering a drain region and an interconnecting metal line disposed thereon. Covering the drain region with the low resistance metal film reduces oxidation in the drain region, and thus reduces the contact resistance between the drain region and the interconnecting metal line.
Abstract:
Disclosed herein is a breaking apparatus for glass substrates. The breaking apparatus includes a breaking bar connected to a linear driver, a plurality of linear bushes longitudinally mounted on the breaking bar and each including an outer barrel, a plurality of buffer cylinders longitudinally mounted on the breaking bar, and a breaking tip extending in one direction and having a bar shape with a predetermined width. Each of the buffer cylinders includes a hollow cylinder body generating pressure therein, a piston received in the cylinder body, and a piston rod connected to the piston. The breaking tip is disposed in a longitudinal direction of the breaking bar beneath the breaking bar and connected to the piston rods and the shafts to be brought into contact with a glass substrate.
Abstract:
Disclosed herein is a breaking apparatus for glass substrates. The breaking apparatus includes a breaking bar connected to a linear driver, a plurality of linear bushes longitudinally mounted on the breaking bar and each including an outer barrel, a plurality of buffer cylinders longitudinally mounted on the breaking bar, and a breaking tip extending in one direction and having a bar shape with a predetermined width. Each of the buffer cylinders includes a hollow cylinder body generating pressure therein, a piston received in the cylinder body, and a piston rod connected to the piston. The breaking tip is disposed in a longitudinal direction of the breaking bar beneath the breaking bar and connected to the piston rods and the shafts to be brought into contact with a glass substrate.
Abstract:
An active layer commonly used in a thin-film-transistor is made by irradiating an amorphous silicon layer with a laser source at an energy density sufficient to induce substantially complete melting to form a melted region and an unmelted region. The melted region of the amorphous silicon layer is solidified with a lateral grain growth from the unmelted region to the melted region. Then the amorphous silicon layer is translated relative to the laser source. In such an apparatus, the laser source is prepared by emitting a laser beam through a mask. The mask has a plurality of transparent regions which comprises slits arranged adjacent to or next to each other and separated by a predetermined distance in certain applications. Such pattern includes contiguous chevron-shaped lines with curved apexes. Alternatively, the pattern also includes slim rectangular apertures.
Abstract:
A garlic upright-positioning and planting device has a simple structure by which a garlic clove can be planted while the garlic clove is kept at its upright posture with its blunt root portion directed toward the ground. There is provided a garlic planting device for planting garlic cloves while maintaining an upright state, which comprises at least one guiding hopper for guiding a garlic clove with a root portion directed in a downward direction, and a planter for planting the garlic clove supplied from each of the guiding hoppers.
Abstract:
A method for forming a polycrystalline silicon layer for TFT according to the present invention includes steps of: depositing an amorphous silicon layer and a silicon oxidation layer on a substrate in this order; and implanting semiconductor ions into the amorphous silicon layer and the silicon oxidation layer while heating the substrate, thereby converting the amorphous silicon layer into a polycrystalline silicon layer, and forming an amorphous oxidation layer between the amorphous silicon layer and the silicon oxidation layer.
Abstract:
A glass substrate laser cutting device according to the invention includes: a working table that has a plurality of vacuum absorbing grooves; a laser cutter; a pressure sensor that measures a pressure sensor when suctioning the glass substrate in a vacuum state; a calculation processing unit that compares the vacuum pressure measured by the pressure sensor with a predetermined threshold pressure and determines whether the glass substrate is broken; a laser cutter that includes a leaser head moving along the cutting direction of the glass substrate and emitting a laser beam; and an optical sensor that is attached to the laser head so as to move together and is disposed at a point in front of the laser beam emitted to the outside so as to detect the breakage of the glass substrate.
Abstract:
A method for forming a polycrystalline silicon layer for TFT according to the present invention includes steps of: depositing an amorphous silicon layer and a silicon oxidation layer on a substrate in this order; and implanting semiconductor ions into the amorphous silicon layer and the silicon oxidation layer while heating the substrate, thereby converting the amorphous silicon layer into a polycrystalline silicon layer, and forming an amorphous oxidation layer between the amorphous silicon layer and the silicon oxidation layer.