公开(公告)号：US20250072008A1

公开(公告)日：2025-02-27

申请号：US18939533

申请日：2024-11-07

Applicant: Winbond Electronics Corp.

Inventor： Chi-Ching Liu ,  Chih-Chao Huang ,  Ming-Che Lin ,  Frederick Chen ,  Han-Huei Hsu

IPC: H10B63/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H10N70/00

Abstract: Provided is a semiconductor device including: a substrate, a plurality of isolation structures, a plurality of channel layers, and a gate structure. The substrate includes a plurality of fins thereon. The plurality of isolation structures are respectively disposed between the plurality of fins. A top surface of the plurality of isolation structures is higher than a top surface of the plurality of fins to form a plurality of openings. The plurality of channel layers are respectively disposed in the plurality of openings. Each channel layer is in contact with a corresponding fin and extends to cover a lower sidewall of a corresponding isolation structure, thereby forming a U-shaped structure. The gate structure is filled in the plurality of openings and extends to cover the top surface of the plurality of isolation structures.

公开(公告)号：US12185553B2

公开(公告)日：2024-12-31

申请号：US17715065

申请日：2022-04-07

Applicant: Winbond Electronics Corp.

Inventor： Chi-Ching Liu ,  Chih-Chao Huang ,  Ming-Che Lin ,  Frederick Chen ,  Han-Huei Hsu

IPC: H10B63/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H10N70/00

Abstract: Provided is a semiconductor device including: a substrate, a plurality of isolation structures, a plurality of channel layers, and a gate structure. The substrate includes a plurality of fins thereon. The plurality of isolation structures are respectively disposed between the plurality of fins. A top surface of the plurality of isolation structures is higher than a top surface of the plurality of fins to form a plurality of openings. The plurality of channel layers are respectively disposed in the plurality of openings. Each channel layer is in contact with a corresponding fin and extends to cover a lower sidewall of a corresponding isolation structure, thereby forming a U-shaped structure. The gate structure is filled in the plurality of openings and extends to cover the top surface of the plurality of isolation structures.

公开(公告)号：US20230329009A1

公开(公告)日：2023-10-12

申请号：US17715065

申请日：2022-04-07

Applicant: Winbond Electronics Corp.

Inventor： Chi-Ching Liu ,  Chih-Chao Huang ,  Ming-Che Lin ,  Frederick Chen ,  Han-Huei Hsu

IPC: H01L27/24 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L45/00

CPC classification number: H01L27/2454 ,  H01L29/0649 ,  H01L45/124 ,  H01L29/7851 ,  H01L45/16 ,  H01L29/66795

Abstract: Provided is a semiconductor device including: a substrate, a plurality of isolation structures, a plurality of channel layers, and a gate structure. The substrate includes a plurality of fins thereon. The plurality of isolation structures are respectively disposed between the plurality of fins. A top surface of the plurality of isolation structures is higher than a top surface of the plurality of fins to form a plurality of openings. The plurality of channel layers are respectively disposed in the plurality of openings. Each channel layer is in contact with a corresponding fin and extends to cover a lower sidewall of a corresponding isolation structure, thereby forming a U-shaped structure. The gate structure is filled in the plurality of openings and extends to cover the top surface of the plurality of isolation structures.