公开(公告)号：US20240240994A1

公开(公告)日：2024-07-18

申请号：US18355102

申请日：2023-07-19

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Rohan Babu NAGABHIRAVA ,  Kuok San HO ,  Hisashi TAKANO ,  Son T. LE ,  Nam Hai PHAM ,  Huy H. HO

IPC: G01K7/36 ,  G11B5/39

CPC classification number: G01K7/36 ,  G11B5/3906 ,  G11B2005/0021

Abstract: The present disclosure generally relates to temperature detection devices, comprising an antiferromagnetic (AFM) layer a ferromagnetic (FM) layer disposed on the AFM layer and a spin-orbit torque (SOT) material layer disposed on the FM layer. The SOT material layer may comprise: a SOT material portion; a SOT material portion and an insulating material portion; or a plurality of SOT material portions and a plurality of insulating material portions. The temperature detection devices may also have a second FM layer disposed on the SOT material layer. The temperature detection devices may also have a second AFM layer disposed on the second FM layer. In another embodiment, the temperature detection devices may also have a heat sink.

公开(公告)号：US20240310459A1

公开(公告)日：2024-09-19

申请号：US18350584

申请日：2023-07-11

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Rohan Babu NAGABHIRAVA ,  Kuok San HO ,  Hisashi TAKANO ,  Son T. LE ,  Nam Hai PHAM ,  Huy H. HO

IPC: G01R33/07 ,  G01R33/00 ,  G01R33/09

CPC classification number: G01R33/075 ,  G01R33/0052 ,  G01R33/093

Abstract: The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

公开(公告)号：US20230306993A1

公开(公告)日：2023-09-28

申请号：US17705147

申请日：2022-03-25

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Brian R. YORK ,  Xiaoyong LIU ,  Son T. LE ,  Cherngye HWANG ,  Michael A. GRIBELYUK ,  Xiaoyu XU ,  Kuok San HO ,  Hisashi TAKANO ,  Julian SASAKI ,  Huy H. HO ,  Khang H. D. NGUYEN ,  Nam Hai PHAM

IPC: G11B5/39

CPC classification number: G11B5/39 ,  G11B2005/3996 ,  G11B2005/0021

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.

公开(公告)号：US20250006221A1

公开(公告)日：2025-01-02

申请号：US18229785

申请日：2023-08-03

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Cherngye HWANG ,  Brian R. YORK ,  Son T. LE ,  Sharon Swee Ling BANH ,  Maki MAEDA ,  Fan TUO ,  Yu TAO ,  Hisashi TAKANO ,  Nam Hai PHAM

IPC: G11B5/39

Abstract: The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.

公开(公告)号：US20240423098A1

公开(公告)日：2024-12-19

申请号：US18645189

申请日：2024-04-24

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Hisashi TAKANO ,  Nam Hai PHAM

IPC: H10N50/85 ,  H03K19/18 ,  H10N52/80

Abstract: The present disclosure generally relate to an integrated circuit utilizing spin orbital-spin orbital (SO-SO) logic. The integrated circuit comprises a plurality of SO-SO logic cells, where each SO-SO logic cell comprises a first spin orbit torque (SOT1) layer, a second spin orbit torque (SOT2) layer, and a ferromagnetic layer disposed between the SOT1 and SOT2 layer. Each SO-SO logic cell is configured for: a first current path that is in plane to a plane of the SOT1 layer, and a second current path that is perpendicular to a plane of the SOT2 layer, the second current path being configured to extend into the ferromagnetic layer. The integrated circuit further comprises a common voltage source connected to each SOT device, and one or more interconnects disposed between adjacent SOT devices of the plurality of SOT devices, the one or more interconnects connecting the adjacent SOT devices together.

公开(公告)号：US20240428820A1

公开(公告)日：2024-12-26

申请号：US18367882

申请日：2023-09-13

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Son T. LE ,  Hisashi TAKANO ,  Fan TUO ,  Hassan OSMAN ,  Nam Hai PHAM

IPC: G11B5/39

Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.

公开(公告)号：US20240420732A1

公开(公告)日：2024-12-19

申请号：US18367877

申请日：2023-09-13

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Son T. LE ,  Hisashi TAKANO ,  Fan TUO ,  Hassan OSMAN ,  Nam Hai PHAM

IPC: G11B5/31

Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.

公开(公告)号：US20210249038A1

公开(公告)日：2021-08-12

申请号：US17100199

申请日：2020-11-20

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Thao A. NGUYEN ,  Zheng GAO ,  Kuok San HO ,  Pham Nam Hai

IPC: G11B5/11 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01F10/32 ,  G11B5/147

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.

公开(公告)号：US20240420733A1

公开(公告)日：2024-12-19

申请号：US18740054

申请日：2024-06-11

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Sharon Swee Ling BANH ,  Hassan OSMAN ,  Hisashi TAKANO

IPC: G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H03K19/18 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/80

Abstract: The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and/or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

公开(公告)号：US20230121375A1

公开(公告)日：2023-04-20

申请号：US18082721

申请日：2022-12-16

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Susumu OKAMURA ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO

IPC: G11B5/39 ,  H10B61/00 ,  H10N52/80 ,  H01F10/32 ,  H10N50/85 ,  H10N52/00 ,  G11C11/16 ,  G11B5/31

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.