摘要:
A driving device is electrically connected with an AC power and a brushless DC motor for a fan. The driving device includes a rectifier unit, a filter unit, a switch power conversion unit and a control unit. The rectifier unit receives the AC power and rectifies the AC power. The filter unit, electrically connected with the rectifier unit, filters the rectified AC power and generates a DC power. The switch power conversion unit, electrically connected with the filter unit and the brushless DC motor, receives the DC power and outputs a driving power to the brushless DC motor. The control unit is electrically connected with the switch power conversion unit and the brushless DC motor.
摘要:
A driving device is electrically connected with an AC power and a brushless DC motor for a fan. The driving device includes a rectifier unit, a filter unit, a switch power conversion unit and a control unit. The rectifier unit receives the AC power and rectifies the AC power. The filter unit, electrically connected with the rectifier unit, filters the rectified AC power and generates a DC power. The switch power conversion unit, electrically connected with the filter unit and the brushless DC motor, receives the DC power and outputs a driving power to the brushless DC motor. The control unit is electrically connected with the switch power conversion unit and the brushless DC motor.
摘要:
A control clocks generator and method thereof for a high speed sense amplifier generates control clocks by utilizing RC delay and gate delay, in combination with reference sensing delay induced from a reference sense amplifier, and thereby, is tracking well for the high speed sense amplifier with process, temperature and voltage variations.
摘要:
A control clocks generator and method thereof for a high speed sense amplifier generates control clocks by utilizing RC delay and gate delay, in combination with reference sensing delay induced from a reference sense amplifier, and thereby, is tracking well for the high speed sense amplifier with process, temperature and voltage variations.
摘要:
A read only memory device includes multiple word lines, a first and second main bit line GL (n) and BL (n), sub-bit lines SB1 (n) to SB4 (n), selection switches MB1 (n) to MB4 (n), and memory cells M1 (n) to M4 (n). The memory cells M1 (n) to M4 (n) are electrically coupled to the sub-bit lines SB1 (n) to SB4 (n) and the sub-bit line SB1 (n+1), respectively. When the memory cell M3 (n) which is connected to SB3 (n) is read, the sub-bit lines SB1 (n) to SB3 (n) are connected to the corresponding main bit lines through the turned selection switches. At this time, the sub-bit lines SB1 (n) to SB3 (n) are not floating but are all at the same high voltage level. Therefore, the capacitance effect will not exist between them to change the voltage level of the sub-bit lines quickly.
摘要:
A control clocks generator and method thereof for a high speed sense amplifier generates control clocks by utilizing RC delay and gate delay, in combination with reference sensing delay induced from a reference sense amplifier, and thereby, is tracking well for the high speed sense amplifier with process, temperature and voltage variations.
摘要:
A sense amplifier circuit for sensing data fed to its data input terminal and operating on the data according to a pre-charge signal, a latch signal and a sense amplifier enable signal. The sense amplifier circuit includes a pre-charge sense circuit that receives data from a data input terminal and outputs a first output value as well as a latching circuit that receives the first output value and outputs a second output value within a preset period. The pre-charge sense circuit further includes a first circuit and a second circuit. The first circuit is capable of pre-charging the data input terminal to a preset potential level. The second circuit produces a first output value according to the input data. In addition, the first circuit and the second circuit are connected in parallel between a voltage source and a data input terminal.
摘要:
A double protection virtual ground memory circuit and column decoder. Through the introduction of a double protection circuit, leakage current from the virtual ground memory is reduced and power consumed by the memory circuit is lowered. Ultimately, sensing range of data within the memory by a sense amplifier is improved.
摘要:
An integrated circuit memory comprises an array of non-volatile memory cells arranged in rows and columns, and including a plurality of banks. There are a plurality of word lines along the plurality of rows in the array, and a plurality of array bit lines arranged along the plurality of columns. The array bit lines extend across the array, and include sense lines and ground lines. A plurality of bank bit lines is arranged along the plurality of columns. The bank bit lines extend across corresponding banks in the plurality of banks and are coupled to memory cells in the corresponding banks. A plurality of connection terminals are coupled to the array bit lines. For each array bit line there is at least one connection terminal per bank in the plurality of banks for which the array bit line will be used. A plurality of bank select transistors is provided to act as bank select circuitry. The bank select transistors are operable to selectively connect respective bank bit lines to corresponding connection terminals for array bit lines. The bank select transistors are characterized by allowing independent connection of bank bit lines to sense lines of the plurality of array bit lines, while minimizing the number of transistors in the sensing path. In embodiments described, the bank select transistors allow independent connection of the bank bit lines to both sense lines and ground lines in the plurality of array bit lines.