Abstract:
A double protection virtual ground memory circuit and column decoder. Through the introduction of a double protection circuit, leakage current from the virtual ground memory is reduced and power consumed by the memory circuit is lowered. Ultimately, sensing range of data within the memory by a sense amplifier is improved.
Abstract:
A switched capacitor digital-to-analog converter (SC-DAC) is provided. The SC-DAC of the present invention can eliminate an influence of a reference voltage source caused by a signal dependent loading at each clock cycle, so as to completely solve a harmonic distortion of an analog output signal converted by a conventional SC-DAC. In addition, when the SC-DAC of the present invention has a plurality of converting channels, since the reference voltage source is not influenced by the effect of signal dependent loading of any converting channel, so that each converting channel can be regarded to have a separate state, and thus the purpose of channel separation can be achieved.
Abstract:
A switched capacitor digital-to-analog converter (SC-DAC) is provided. The SC-DAC of the present invention can eliminate an influence of a reference voltage source caused by a signal dependent loading at each clock cycle, so as to completely solve a harmonic distortion of an analog output signal converted by a conventional SC-DAC. In addition, when the SC-DAC of the present invention has a plurality of converting channels, since the reference voltage source is not influenced by the effect of signal dependent loading of any converting channel, so that each converting channel can be regarded to have a separate state, and thus the purpose of channel separation can be achieved.
Abstract:
A flat-cell nonvolatile semiconductor memory. The semiconductor memory includes a plurality of units. Each unit includes word lines, a main bit line, a ground line, sub-bit lines, memory cell columns, and bank-selecting switches. Word lines are disposed in parallel, and the main bit line and the ground line cross the word lines. Sub-bit lines are disposed substantially in parallel to the main bit lines. Each memory cell column includes a plurality of memory cells connected in parallel between respective adjacent two of the sub-bit lines. The bank-selecting switches are used to select one of the memory cell columns. The first one of the bank-selecting switches is disposed between the main bit line and the fourth sub-bit line. The second of the bank-selecting switches is disposed between the main bit line and the second sub-bit line. The third of the bank-selecting switches is disposed between the ground line and the fifth sub-bit line. The fourth of the bank-selecting switches is disposed between the ground line and the third sub-bit line. The fifth of the bank-selecting switch is disposed between the ground line and the third sub-bit line. The sixth bank-selecting switch is disposed between the ground line and the first sub-bit line. Wherein, the second, third, and fourth bank-selecting switches are controlled by a first selecting signal, and the first, fifth, and sixth bank-selecting switches are controlled by a second selecting signal.