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公开(公告)号：US20150014810A1
公开(公告)日：2015-01-15
申请号：US14281075
申请日：2014-05-19
IPC分类号： H01L29/06
CPC分类号： H01L29/0646 , H01L21/26513 , H01L21/761 , H01L21/76224 , H01L21/76237 , H01L21/76243 , H01L21/76267 , H01L21/763 , H01L21/823481 , H01L21/823878 , H01L21/823892 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： Isolation structures for isolating semiconductor devices from a substrate include floor isolation regions buried within the substrate and one or more trenches extending from a surface of the substrate to the buried floor isolation region.
摘要翻译： 用于从衬底隔离半导体器件的隔离结构包括掩埋在衬底内的底部隔离区域和从衬底的表面延伸到掩埋地板隔离区域的一个或多个沟槽。
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公开(公告)号：US08659086B2
公开(公告)日：2014-02-25
申请号：US12286326
申请日：2008-09-30
IPC分类号： H01L23/62
CPC分类号： H01L29/735 , H01L27/0251 , H01L29/0626 , H01L29/0692 , H01L29/7317 , H01L29/7833 , H01L29/861 , H01L29/866
摘要： An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically “stacked” on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.
摘要翻译： 在半导体衬底的隔离区域中形成静电放电（ESD）保护器件。 ESD保护器件可以是MOS或双极晶体管或二极管的形式。 隔离结构可以包括深度植入的地板层和横向围绕隔离区域的一个或多个植入的孔。 隔离结构和ESD保护器件使用模块化工艺制造，其中几乎不包括热处理。 由于ESD器件是隔离的，所以两个或多个ESD器件可以彼此电“堆叠”，使得器件的触发电压相加在一起以实现更高的有效触发电压。
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公开(公告)号：US08138570B2
公开(公告)日：2012-03-20
申请号：US12002346
申请日：2007-12-17
CPC分类号： H01L29/735 , H01L21/761 , H01L21/82285 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/8249 , H01L27/0623 , H01L27/0826 , H01L27/092 , H01L29/7322 , H01L2924/0002 , H01L2924/00
摘要： An isolation structure for a semiconductor device comprises a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. This structure provides a relatively deep isolated pocket in a semiconductor substrate while limiting the depth of the trench that must be etched in the substrate. An isolated junction field-effect transistor is formed in the isolated pocket.
摘要翻译： 用于半导体器件的隔离结构包括地板隔离区域，位于地板隔离区域上方的电介质填充沟槽以及从沟槽底部向下延伸到地板隔离区域的侧壁隔离区域。 该结构在半导体衬底中提供了较深的隔离袋，同时限制了必须在衬底中被蚀刻的沟槽的深度。 隔离的结场场效应晶体管形成在隔离的袋中。
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公开(公告)号：US07898060B2
公开(公告)日：2011-03-01
申请号：US12220992
申请日：2008-07-30
IPC分类号： H01L29/02
CPC分类号： H01L29/0646 , H01L21/26513 , H01L21/761 , H01L21/76224 , H01L21/76237 , H01L21/76243 , H01L21/76267 , H01L21/763 , H01L21/823481 , H01L21/823878 , H01L21/823892 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.
摘要翻译： 用于半导体衬底的各种隔离结构包括形成在衬底中的沟槽，其填充有电介质材料或填充有导电材料并且沿着沟槽的壁衬有介电层。 沟槽可以与掺杂的侧壁隔离区域组合使用。 沟槽和侧壁隔离区域都可以是环形的并且包围衬底的隔离袋。 隔离结构通过不包括显着的热处理或掺杂剂扩散的模块化注入和蚀刻工艺形成，使得所得到的结构是紧凑的并且可以紧密地堆积在衬底的表面中。
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公开(公告)号：US07795681B2
公开(公告)日：2010-09-14
申请号：US12002437
申请日：2007-12-17
IPC分类号： H01L23/62
CPC分类号： H01L29/735 , H01L21/761 , H01L21/82285 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/8249 , H01L27/0623 , H01L27/0826 , H01L27/092 , H01L29/7322 , H01L2924/0002 , H01L2924/00
摘要： A lateral MOSFET formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric layer over a surface of the substrate, a drain region of a second conductivity type, a source region of a second conductivity type, and a body region of the first conductivity type which extends under the gate. The body region may have a non-monotonic vertical doping profile with a portion located deeper in the substrate having a higher doping concentration than a portion located shallower in the substrate. The lateral MOSFET may be drain-centric, with the source region and an optional dielectric-filled trench surrounding the drain region.
摘要翻译： 形成在第一导电类型的衬底中的横向MOSFET包括形成在衬底的表面上的栅极电介质层顶部的栅极，第二导电类型的漏极区域，第二导电类型的源极区域和主体区域 的第一导电类型在栅极下延伸。 体区域可以具有非单调垂直掺杂分布，其中位于衬底中的部分位于比衬底中较浅的部分具有更高的掺杂浓度的部分。 横向MOSFET可以以漏极为中心，源极区域和围绕漏极区域的可选的介电填充沟槽。
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公开(公告)号：US07701033B2
公开(公告)日：2010-04-20
申请号：US12220986
申请日：2008-07-30
IPC分类号： H01L23/58
CPC分类号： H01L29/0646 , H01L21/26513 , H01L21/761 , H01L21/76224 , H01L21/76237 , H01L21/76243 , H01L21/76267 , H01L21/763 , H01L21/823481 , H01L21/823878 , H01L21/823892 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.
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公开(公告)号：US20090034136A1
公开(公告)日：2009-02-05
申请号：US12286325
申请日：2008-09-30
IPC分类号： H02H9/04
CPC分类号： H01L29/735 , H01L27/0251 , H01L29/0626 , H01L29/0692 , H01L29/7317 , H01L29/7833 , H01L29/861 , H01L29/866
摘要： An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically “stacked” on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.
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8.发明申请ESD protection for bipolar-CMOS-DMOS integrated circuit devices and modular method of forming the same 有权双极CMOS-DMOS集成电路器件的ESD保护及其形成的模块化方法公开(公告)号：US20080029820A1
公开(公告)日：2008-02-07
申请号：US11499381
申请日：2006-08-04
IPC分类号： H01L23/62
CPC分类号： H01L29/735 , H01L27/0251 , H01L29/0626 , H01L29/0692 , H01L29/7317 , H01L29/7833 , H01L29/861 , H01L29/866
摘要： An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically “stacked” on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.
摘要翻译： 在半导体衬底的隔离区域中形成静电放电（ESD）保护器件。 ESD保护器件可以是MOS或双极晶体管或二极管的形式。 隔离结构可以包括深度植入的地板层和横向围绕隔离区域的一个或多个植入的孔。 隔离结构和ESD保护器件使用模块化工艺制造，其中几乎不包括热处理。 由于ESD器件是隔离的，所以两个或多个ESD器件可以彼此电“堆叠”，使得器件的触发电压相加在一起以实现更高的有效触发电压。
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公开(公告)号：US07956437B2
公开(公告)日：2011-06-07
申请号：US12455212
申请日：2009-05-28
IPC分类号： H01L21/70
CPC分类号： H01L29/0646 , H01L21/26513 , H01L21/761 , H01L21/76224 , H01L21/76237 , H01L21/76243 , H01L21/76267 , H01L21/763 , H01L21/823481 , H01L21/823878 , H01L21/823892 , H01L29/0649 , H01L2924/0002 , H01L2924/00
摘要： A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with a dielectric layer along the walls of the trench. The trench may be used in combination with doped sidewall isolation regions. Both the trench and the sidewall isolation regions may be annular and enclose an isolated pocket of the substrate. The isolation structures are formed by modular implant and etch processes that do not include significant thermal processing or diffusion of dopants so that the resulting structures are compact and may be tightly packed in the surface of the substrate.
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公开(公告)号：US20110012196A1
公开(公告)日：2011-01-20
申请号：US12807675
申请日：2010-09-10
IPC分类号： H01L29/735
CPC分类号： H01L29/735 , H01L21/761 , H01L21/82285 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L21/8249 , H01L27/0623 , H01L27/0826 , H01L27/092 , H01L29/7322 , H01L2924/0002 , H01L2924/00
摘要： A lateral MOSFET formed in a substrate of a first conductivity type includes a gate formed atop a gate dielectric layer over a surface of the substrate, a drain region of a second conductivity type, a source region of a second conductivity type, and a body region of the first conductivity type which extends under the gate. The body region may have a non-monotonic vertical doping profile with a portion located deeper in the substrate having a higher doping concentration than a portion located shallower in the substrate. The lateral MOSFET is drain-centric, with the source region and a dielectric-filled trench surrounding the drain region.
摘要翻译： 形成在第一导电类型的衬底中的横向MOSFET包括形成在衬底的表面上的栅极电介质层顶部的栅极，第二导电类型的漏极区域，第二导电类型的源极区域和主体区域 的第一导电类型在栅极下延伸。 体区域可以具有非单调垂直掺杂分布，其中位于衬底中的部分位于比衬底中较浅的部分具有更高的掺杂浓度的部分。 横向MOSFET是以漏极为中心的，源极区和围绕漏极区的电介质填充沟槽。
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