-
公开(公告)号：US10347838B2
公开(公告)日：2019-07-09
申请号：US15525089
申请日：2017-03-10
Inventor： Zhe Liu
Abstract: The present disclosure provides a manufacturing method for thin film transistors and a display panel, in which a semiconductor channel layer is formed by embossing on a semiconductor solution material directly by using an embossing template having a semiconductor channel layer pattern, thus it does not need to form a photoresist layer on the semiconductor solution material to form a semiconductor channel layer, the erosion of the semiconductor channel layer caused by the photoresist can be avoided, thereby the product quality and the device performance are improved.
-
公开(公告)号：US20180035553A1
公开(公告)日：2018-02-01
申请号：US14914647
申请日：2015-12-28
Inventor： Zhe Liu
CPC classification number: H05K5/0017 , H01L21/77 , H01L27/32 , H05K1/028 , H05K3/0011
Abstract: The invention provides a flexible display substrate and manufacturing method thereof. The manufacturing method for flexible display substrate patternizes the inorganic layer between the two organic layers on the flexible substrate so that the two organic layer contacting each other at the gaps on the inorganic separation layer, so as to avoid the potential damage on the films during the subsequent laser-lift-off process. The method is simple and the manufacturing process is efficient. The flexible display substrate of the present invention uses a structure of stacked four thin film layers to realize effective water/oxygen blocking, thus avoiding display devices' eroding. The inner two organic layers of the flexible substrate contact each other directly at the gaps of the inorganic separation layer, and the high adhesion strength between the upper and lower film layers of the flexible substrate helps avoiding film-peeling inner the stacked structure.
-
公开(公告)号：US10418382B2
公开(公告)日：2019-09-17
申请号：US15521175
申请日：2017-03-10
Inventor： Zhe Liu
Abstract: A substrate, a thin film transistor array substrate, and a manufacturing method are provided. The substrate includes a main plate, a first film layer, a second film layer, and an insulation layer. The first film layer is disposed on the main plate, and is provided with at least two recesses. The insulation layer is disposed on the first film layer. The second film layer is disposed on the insulation layer and provided with at least two protrusions facing the insulation layer. The amount of stress accumulated is effectively reduced after the substrate is heated.
-
公开(公告)号：US10319933B2
公开(公告)日：2019-06-11
申请号：US15100345
申请日：2016-04-08
Inventor： Zhe Liu
Abstract: The invention discloses an OLED device including: a flexible substrate; a first anode and a second anode on the flexible substrate and being spaced from each other to form a channel therebetween; a flexible electrically-conductive assembly in the channel and connecting the first anode with the second anode; a first organic light emitting layer on the first anode and a second organic light emitting layer on the second anode; and a cathode on the first and the second organic light emitting layers. The invention can improve the flexibility of the anode of the OLED device, reduce an actual continuous length of the anode on a bending direction, reduce the probability of crack generation in the process of the OLED device being bent by external force, and therefore can increase bendable and wearable abilities of a flexible OLED display device formed by such OLED device.
-
5.发明授权公开(公告)号：US10096656B1
公开(公告)日：2018-10-09
申请号：US15541471
申请日：2017-05-16
Inventor： Zhe Liu , Xuanyun Wang
Abstract: The invention provides a manufacturing method for complementary TFT device. The manufacturing method for complementary TFT device uses a solution method to continuously form a metal oxide semiconductor TFT and an organic semiconductor TFT; the metal oxide semiconductor TFT and the organic semiconductor TFT are electrically connected, and one of the metal oxide semiconductor TFT and the organic semiconductor TFT is an N-type channel TFT, and the other is a P-type channel TFT. The method can reduce the use of vacuum apparatus and high temperature apparatus, and explore the advantages of the solution method to realize large area and low-cost to reduce production costs and increase product competitiveness. The invention also provides a manufacturing method for OLED display panel, able to reduce production cost and increase product competitiveness.
-
Patent Agency Ranking
公开(公告)号：US20180287081A1
公开(公告)日：2018-10-04
申请号：US15539700
申请日：2017-04-19
Inventor： Zhe Liu
Abstract: The present invention provides a vertical channel organic thin-film transistor and a manufacturing method thereof. The vertical channel organic thin-film transistor includes: an annular organic semiconductor layer, an annular drain electrode and an annular source electrode respectively set in contact with upper and lower sides of the annular organic semiconductor layer, and a gate electrode arranged inwardly of an inner circle of the annular organic semiconductor layer and insulated and isolated from the annular organic semiconductor layer. An effective conductive channel length of the thin-film transistor can be varied by changing a thickness of the organic semiconductor layer made with a solution method so that the definition of a short channel pattern no longer relies upon high precision exposure and etching equipment and thus, the difficulty and the cost of the manufacturing process can be reduced. Further, the annular electrode structure makes it possible to save a planar space of the thin-film transistor, increasing scenarios of application of the thin-film transistor, and improving flexibility of circuit design.
-
公开(公告)号：US10045445B2
公开(公告)日：2018-08-07
申请号：US14914647
申请日：2015-12-28
Inventor： Zhe Liu
Abstract: The invention provides a flexible display substrate and manufacturing method thereof. The manufacturing method for flexible display substrate patternizes the inorganic layer between the two organic layers on the flexible substrate so that the two organic layer contacting each other at the gaps on the inorganic separation layer, so as to avoid the potential damage on the films during the subsequent laser-lift-off process. The method is simple and the manufacturing process is efficient. The flexible display substrate of the present invention uses a structure of stacked four thin film layers to realize effective water/oxygen blocking, thus avoiding display devices' eroding. The inner two organic layers of the flexible substrate contact each other directly at the gaps of the inorganic separation layer, and the high adhesion strength between the upper and lower film layers of the flexible substrate helps avoiding film-peeling inner the stacked structure.
-
公开(公告)号：US20180301471A1
公开(公告)日：2018-10-18
申请号：US15521175
申请日：2017-03-10
Inventor： Zhe Liu
IPC: H01L27/12
CPC classification number: H01L27/1218 , H01L21/77 , H01L27/1262
Abstract: A substrate, a thin film transistor array substrate, and a manufacturing method are provided. The substrate includes a main plate, a first film layer, a second film layer, and an insulation layer. The first film layer is disposed on the main plate, and is provided with at least two recesses. The insulation layer is disposed on the first film layer. The second film layer is disposed on the insulation layer and provided with at least two protrusions facing the insulation layer. The amount of stress accumulated is effectively reduced after the substrate is heated.
-
公开(公告)号：US10043991B2
公开(公告)日：2018-08-07
申请号：US15312055
申请日：2016-09-09
Inventor： Zhe Liu
CPC classification number: H01L51/0558 , H01L27/283 , H01L27/3258 , H01L27/3262 , H01L51/0008 , H01L51/0011 , H01L51/0545
Abstract: An array substrate and a manufacturing method thereof are provided. The method comprises steps of: forming a first metal layer, a gate insulation layer, a second metal layer, and a barrier layer; and patterning the barrier layer to form a gap portion by etching a portion of the barrier layer corresponding to a channel location. The width of one side of the gap portion close to the second metal layer is greater than that of the other side of the gap portion far away from the second metal layer.
-
公开(公告)号：US09899615B1
公开(公告)日：2018-02-20
申请号：US15126488
申请日：2016-08-03
Inventor： Zhe Liu
CPC classification number: H01L51/0541 , B41F17/00 , B41F31/28 , B41M3/006 , H01L51/052 , H01L51/0558
Abstract: A manufacturing method of an organic thin film transistor includes: forming source and drain electrodes on a substrate; irradiating a photosensitive outer surface with a first charge of a photosensitive roller by laser to pattern the photosensitive outer surface and forming a channel pattern area without charge; spraying an atomized organic material solution with a third charge having same polarity as the first charge onto the channel pattern area to make the organic material solution be absorbed onto the channel pattern area and thereby form a channel region layer; attaching a fourth charge having an opposite polarity to the third charge onto a surface of the substrate disposed with the source and drain electrodes; and transferring a channel pattern in the channel region layer onto the substrate and connected with the source and drain electrodes and thereby forming a channel region. A manufacturing apparatus also is provided.
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.017 seconds)
