- Patent Title: Manufacturing method for thin film transistors and display panel
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Application No.: US15525089Application Date: 2017-03-10
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Publication No.: US10347838B2Publication Date: 2019-07-09
- Inventor: Zhe Liu
- Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: WUHAN CHINA STAR OPTOELECTRONICS, TECHNOLOGY CO., LTD
- Current Assignee: WUHAN CHINA STAR OPTOELECTRONICS, TECHNOLOGY CO., LTD
- Current Assignee Address: CN Wuhan
- Agency: Soroker Agmon Nordman
- Priority: CN201710091596 20170220
- International Application: PCT/CN2017/076314 WO 20170310
- International Announcement: WO2018/149000 WO 20180823
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L27/32 ; H01L51/00 ; G03F7/00 ; H01L21/77 ; H01L29/66

Abstract:
The present disclosure provides a manufacturing method for thin film transistors and a display panel, in which a semiconductor channel layer is formed by embossing on a semiconductor solution material directly by using an embossing template having a semiconductor channel layer pattern, thus it does not need to form a photoresist layer on the semiconductor solution material to form a semiconductor channel layer, the erosion of the semiconductor channel layer caused by the photoresist can be avoided, thereby the product quality and the device performance are improved.
Public/Granted literature
- US20180351103A1 MANUFACTURING METHOD FOR THIN FILM TRANSISTORS AND DISPLAY PANEL Public/Granted day:2018-12-06
Information query
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