Solid-state imaging device having a waveguide partition grid with variable grid widths

    公开(公告)号:US11569285B2

    公开(公告)日:2023-01-31

    申请号:US16872605

    申请日:2020-05-12

    Inventor: Chi-Han Lin

    Abstract: A solid-state imaging device having a first area and a second area surrounding the first area is provided. The solid-state imaging device includes a substrate having a plurality of photoelectric conversion elements. The solid-state imaging device also includes a color filter layer disposed on the substrate. The color filter layer includes a plurality of color filter segments corresponding to the plurality of photoelectric conversion elements. The solid-state imaging device further includes an optical waveguide layer over the color filter layer. The optical waveguide layer includes a waveguide partition grid, a waveguide material in spaces of the waveguide partition grid, and an anti-reflection film on the waveguide partition grid and the waveguide material. The width of the top of the waveguide partition grid is larger than the width of the bottom of the waveguide partition grid.

    Solid-state imaging devices having light shielding partitions with variable dimensions
    3.
    发明授权
    Solid-state imaging devices having light shielding partitions with variable dimensions 有权
    具有可变尺寸的遮光隔板的固态成像装置

    公开(公告)号:US09281333B2

    公开(公告)日:2016-03-08

    申请号:US14267480

    申请日:2014-05-01

    Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements. A color filter layer is disposed above the photoelectric conversion elements. A light shielding layer is disposed between the color filter layer and substrate. The light-shielding layer has a plurality of first light shielding partitions extended along a first direction and a plurality of second light shielding partitions extended along a second direction perpendicular to the first direction. The first light shielding partitions have different dimensions along the second direction and the second light shielding partitions have different dimensions along the first direction.

    Abstract translation: 提供固态成像装置。 固态成像装置包括含有多个光电转换元件的基板。 滤色器层设置在光电转换元件的上方。 遮光层设置在滤色器层和基板之间。 遮光层具有沿着第一方向延伸的多个第一遮光隔板和沿着垂直于第一方向的第二方向延伸的多个第二遮光隔板。 第一遮光隔板沿着第二方向具有不同的尺寸,并且第二遮光隔板沿着第一方向具有不同的尺寸。

    Image sensor and method forming the same

    公开(公告)号:US11569291B2

    公开(公告)日:2023-01-31

    申请号:US17090298

    申请日:2020-11-05

    Abstract: A method forming an image sensor includes: providing a substrate including a plurality of sensing portions; forming a color filter layer on the substrate; forming a micro-lens material layer on the color filter layer; and forming a hard mask pattern on the micro-lens material layer, wherein the hard mask pattern has a first gap and a second gap larger than the first gap. The method includes reflowing the hard mask pattern into a plurality of dome shapes; transferring the plurality of dome shapes into the micro-lens material layer to form a plurality of micro-lenses; and forming a top film conformally on the plurality of micro-lenses.

    Image sensor
    5.
    发明授权

    公开(公告)号:US10566365B2

    公开(公告)日:2020-02-18

    申请号:US14722730

    申请日:2015-05-27

    Abstract: An image sensor includes a sensing layer, a first microlens, and a number of second microlenses. The first microlens is disposed on the sensing layer. The second microlenses are disposed on the sensing layer adjacent to the first microlens. The diameter of the first microlens is greater than the diameter of each of the second microlenses.

    Solid-state imaging devices with enhanced angular response

    公开(公告)号:US09634049B2

    公开(公告)日:2017-04-25

    申请号:US14861378

    申请日:2015-09-22

    Abstract: A solid-state imaging device includes a substrate containing a plurality of photoelectric conversion elements arranged into a pixel array. A color filter layer including a plurality of color filter segments is disposed above the photoelectric conversion elements. A partition grid includes a plurality of partitions, and each of the partitions is disposed between two adjacent color filter segments. The color filter layer and the partition grid are disposed in the same layer. In addition, the partitions include a first partition disposed at a center line of the pixel array and a second partition disposed at an edge of the pixel array. The second partition has a top width that is larger than the top width of the first partition.

    Solid-state imaging devices
    7.
    发明授权

    公开(公告)号:US10784300B1

    公开(公告)日:2020-09-22

    申请号:US16385463

    申请日:2019-04-16

    Inventor: Chi-Han Lin

    Abstract: The solid-state imaging device includes a first set of units disposed in a substrate and including a first pixel unit, a second pixel unit and a third pixel unit. The first pixel unit, the second pixel unit and the third pixel unit are sequentially arranged and include respective photoelectric conversion elements. The solid-state imaging device also includes a metal grid structure disposed over the first set of units and including a first portion and a second portion. The first portion is disposed between the first pixel unit and the second pixel unit and has a first width. The second portion is disposed between the second pixel unit and the third pixel unit and has a second width that is greater than the first width.

    Solid-state imaging devices
    8.
    发明授权

    公开(公告)号:US09704901B2

    公开(公告)日:2017-07-11

    申请号:US14599139

    申请日:2015-01-16

    Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter layer includes a first color filter component and a second color filter component separated from each other and disposed above the semiconductor substrate. A microlens structure includes a first microlens element and a second microlens element separated from each other and disposed on the first and second color filter components respectively. The solid-state imaging device also includes a gap filled with air. The gap is disposed between the first and second color filter components and also between the first and second microlens elements.

    Solid-state imaging devices and methods of fabricating the same
    9.
    发明授权
    Solid-state imaging devices and methods of fabricating the same 有权
    固态成像装置及其制造方法

    公开(公告)号:US09412775B2

    公开(公告)日:2016-08-09

    申请号:US14220864

    申请日:2014-03-20

    Abstract: Solid-state imaging devices and fabrication methods thereof are provided. The solid-state imaging device includes a substrate containing a first photoelectric conversion element and a second photoelectric conversion element. A color filter layer has a first color filter component and a second color filter component respectively disposed above the first and second photoelectric conversion elements. A light-shielding partition is disposed between the first and second color filter components. The light-shielding partition has a height lower than that of the first and second color filter components. A buffer layer is disposed between the first and second color filter components and above the light-shielding partition. The buffer layer has a refractive index lower than that of the color filter layer.

    Abstract translation: 提供固态成像装置及其制造方法。 固态成像装置包括含有第一光电转换元件和第二光电转换元件的基板。 滤色器层具有分别设置在第一和第二光电转换元件上方的第一滤色器部件和第二滤色器部件。 遮光隔板设置在第一和第二滤色器组件之间。 遮光隔板的高度低于第一和第二滤色器部件的高度。 缓冲层设置在第一和第二滤色器组件之间以及遮光隔板之上。 缓冲层的折射率低于滤色器层的折射率。

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