Optical elements and method for fabricating the same

    公开(公告)号:US10850462B2

    公开(公告)日:2020-12-01

    申请号:US16150804

    申请日:2018-10-03

    摘要: A method for fabricating an optical element is provided. A substrate is provided. A plurality of metal grids are formed on the substrate. An organic layer is formed on the substrate and the metal grids. The organic layer is etched to form a first patterned organic layer including a plurality of first protrusion portions and a plurality of first trenches surrounded by the first protrusion portions. The first patterned organic layer is etched to form a second patterned organic layer including a plurality of second protrusion portions and a plurality of second trenches surrounded by the second protrusion portions. Each second protrusion portion covers one metal grid. There is a distance between the center axis of one second protrusion portion of the second patterned organic layer and the center axis of one metal grid covered by the one second protrusion portion of the second patterned organic layer.

    Optical fingerprint sensor
    2.
    发明授权

    公开(公告)号:US10515253B2

    公开(公告)日:2019-12-24

    申请号:US15855122

    申请日:2017-12-27

    IPC分类号: G06K9/00

    摘要: An optical fingerprint sensor, includes: an image sensor array; a collimator layer disposed above the image sensor array, the collimator array having an array of first apertures; a light guiding layer disposed on the collimator layer; a light source emitting light into the light guiding layer; and a sensing area disposed above the light guiding layer. The light guiding layer allows a portion of the light from the light source to enter to the sensing area while directing the remaining portion of the light forward.

    Solid-state imaging devices
    4.
    发明授权

    公开(公告)号:US09704901B2

    公开(公告)日:2017-07-11

    申请号:US14599139

    申请日:2015-01-16

    IPC分类号: H01L29/49 H01L27/146

    摘要: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter layer includes a first color filter component and a second color filter component separated from each other and disposed above the semiconductor substrate. A microlens structure includes a first microlens element and a second microlens element separated from each other and disposed on the first and second color filter components respectively. The solid-state imaging device also includes a gap filled with air. The gap is disposed between the first and second color filter components and also between the first and second microlens elements.