公开(公告)号：US09735238B2

公开(公告)日：2017-08-15

申请号：US14471404

申请日：2014-08-28

申请人： Virginia Tech Intellectual Properties, Inc.

发明人： Xiucheng Huang ,  Weijing Du ,  Qiang Li ,  Fred C. Lee

IPC分类号： G05F1/00 ,  H01L29/20 ,  H01L29/16 ,  H03K17/10 ,  H03K17/567 ,  H02M1/00 ,  H03K17/687

CPC分类号： H01L29/20 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7828 ,  H02M2001/0058 ,  H03K17/102 ,  H03K17/567 ,  H03K2017/6875 ,  H03K2217/0036 ,  Y02B70/1491

摘要： In a cascode switching device, avalanche breakdown of a control transistor and loss of soft switching or zero voltage switching in a high voltage normally-on depletion mode transistor having a negative switching threshold voltage and the corresponding losses are avoided by providing additional capacitance in parallel with a parallel connection of drain-source parasitic capacitance of the control transistor and gate-source parasitic capacitance of the high voltage, normally-on transistor to form a capacitive voltage divider with the drain-source parasitic capacitance of the high voltage, normally-on transistor such that the avalanche breakdown voltage of the control transistor cannot be reached. The increased capacitance also assures that the drain source parasitic capacitance of the high voltage, normally-on transistor is fully discharged before internal turn-on can occur.

公开(公告)号：US20150200583A1

公开(公告)日：2015-07-16

申请号：US14471404

申请日：2014-08-28

申请人： Virginia Tech Intellectual Properties, Inc.

发明人： Xiucheng Huang ,  Weijing Du ,  Qiang Li ,  Fred C. Lee

IPC分类号： H02M1/08 ,  H01L27/06 ,  H01L29/16 ,  H01L29/20 ,  H02M3/156 ,  H03K3/012

CPC分类号： H01L29/20 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7828 ,  H02M2001/0058 ,  H03K17/102 ,  H03K17/567 ,  H03K2017/6875 ,  H03K2217/0036 ,  Y02B70/1491

摘要： In a cascode switching device, avalanche breakdown of a control transistor and loss of soft switching or zero voltage switching in a high voltage normally-on depletion mode transistor having a negative switching threshold voltage and the corresponding losses are avoided by providing additional capacitance in parallel with a parallel connection of drain-source parasitic capacitance of the control transistor and gate-source parasitic capacitance of the high voltage, normally-on transistor to form a capacitive voltage divider with the drain-source parasitic capacitance of the high voltage, normally-on transistor such that the avalanche breakdown voltage of the control transistor cannot be reached. The increased capacitance also assures that the drain source parasitic capacitance of the high voltage, normally-on transistor is fully discharged before internal turn-on can occur.

摘要翻译： 在共源共极开关器件中，通过提供与...的并联的附加电容来避免控制晶体管的雪崩击穿以及具有负开关阈值电压和相应损耗的高电压常开耗尽型晶体管中的软开关或零电压开关损耗 控制晶体管的漏 - 源寄生电容和高压常栅晶体管的栅 - 源寄生电容的并联连接，形成具有高电压漏极 - 源极寄生电容的电容分压器，常闭晶体管 使得控制晶体管的雪崩击穿电压不能达到。 增加的电容还保证了高电压，常开晶体管的漏源寄生电容在内部导通之前被完全放电。