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公开(公告)号:US20180175371A1
公开(公告)日:2018-06-21
申请号:US15579029
申请日:2016-06-01
发明人: Kevin M. Ryan , Tadhg Kennedy
IPC分类号: H01M4/134 , H01M4/36 , H01M4/38 , H01M10/0525 , C30B29/06 , C30B29/08 , C30B29/66 , C30B11/12 , C30B25/18
CPC分类号: H01M4/134 , C30B11/12 , C30B25/18 , C30B29/06 , C30B29/08 , C30B29/52 , C30B29/60 , C30B29/66 , H01M4/366 , H01M4/38 , H01M4/386 , H01M10/0525
摘要: The present invention provides a heterostructure for use as an electrode in a lithium ion battery as well as a method for synthesising the heterostructure.
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2.
公开(公告)号:US20160043385A1
公开(公告)日:2016-02-11
申请号:US14594548
申请日:2015-01-12
发明人: Kevin M. Ryan , Tadhg Kennedy , Emma Mullane
IPC分类号: H01M4/134 , H01M2/16 , H01M4/38 , C23C16/52 , C23C16/28 , C23C16/02 , C23C16/56 , C23C16/44 , H01M4/04 , C23C16/24
CPC分类号: H01M4/134 , B82Y40/00 , C23C16/0227 , C23C16/0281 , C23C16/24 , C23C16/28 , C23C16/4408 , C23C16/52 , C23C16/56 , C30B29/06 , H01M2/1673 , H01M4/0428 , H01M4/0445 , H01M4/045 , H01M4/1395 , H01M4/38 , H01M4/386 , H01M4/387 , H01M4/662 , H01M10/052 , H01M2004/027
摘要: The invention provides process for producing a stable Si or Ge electrode structure comprising cycling a Si or Ge nanowire electrode until a structure of the Si nanowires form a continuous porous network of Si or Ge ligaments.
摘要翻译: 本发明提供了生产稳定的Si或Ge电极结构的方法,包括循环Si或Ge纳米线电极,直到Si纳米线的结构形成Si或Ge韧带的连续多孔网络。
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公开(公告)号:US11075370B2
公开(公告)日:2021-07-27
申请号:US15703493
申请日:2017-09-13
发明人: Kevin M. Ryan , Tadhg Kennedy , Emma Mullane
IPC分类号: H01M4/1395 , H01M4/134 , C30B29/06 , H01M4/04 , H01M4/38 , H01M4/66 , H01M50/46 , C23C16/02 , C23C16/24 , C23C16/28 , C23C16/44 , C23C16/52 , C23C16/56 , H01M10/052 , B82Y40/00 , H01M4/02
摘要: The invention provides process for producing a stable Si or Ge electrode structure comprising cycling a Si or Ge nanowire electrode until a structure of the Si nanowires form a continuous porous network of Si or Ge ligaments.
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公开(公告)号:US20180006295A1
公开(公告)日:2018-01-04
申请号:US15703493
申请日:2017-09-13
发明人: Kevin M. Ryan , Tadhg Kennedy , Emma Mullane
IPC分类号: H01M4/134 , C23C16/02 , H01M4/66 , H01M4/38 , H01M4/1395 , H01M2/16 , C30B29/06 , C23C16/56 , C23C16/52 , C23C16/44 , C23C16/28 , C23C16/24 , H01M4/04 , B82Y40/00 , H01M10/052 , H01M4/02
CPC分类号: H01M4/134 , B82Y40/00 , C23C16/0227 , C23C16/0281 , C23C16/24 , C23C16/28 , C23C16/4408 , C23C16/52 , C23C16/56 , C30B29/06 , H01M2/1673 , H01M4/0428 , H01M4/0445 , H01M4/045 , H01M4/1395 , H01M4/38 , H01M4/386 , H01M4/387 , H01M4/662 , H01M10/052 , H01M2004/027
摘要: The invention provides process for producing a stable Si or Ge electrode structure comprising cycling a Si or Ge nanowire electrode until a structure of the Si nanowires form a continuous porous network of Si or Ge ligaments.
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