ASHING APPARATUS
    1.
    发明申请
    ASHING APPARATUS 有权
    打磨装置

    公开(公告)号:US20160128200A1

    公开(公告)日:2016-05-05

    申请号:US14896016

    申请日:2014-05-26

    发明人: Kenichi HIROSE

    IPC分类号: H05K3/00 H01L21/67

    摘要: An ashing apparatus includes a treatment chamber having an object to be processed therein, and a lamp chamber having an ultraviolet lamp that radiates the object with an ultraviolet beam. The ashing apparatus is configured to accurately maintain an irradiation distance between a light source and the object. Thus, it is possible to efficiently remove a smear from a wiring board. The treatment chamber and the lamp chamber are moved relative to each other and in parallel to a surface of the object to be processed. The treatment chamber has a stage that supports the object, a gas inlet opening for supplying a treatment gas into the treatment chamber, and a gas outlet opening for discharging the treatment gas. An ultraviolet transmitting window member that partitions the treatment chamber and the lamp chamber from each other is fixed to the treatment chamber.

    摘要翻译: 灰化装置包括具有待处理物体的处理室和具有用紫外线照射物体的紫外线灯的灯室。 灰化装置被配置为精确地保持光源和物体之间的照射距离。 因此,可以有效地从布线板去除污迹。 处理室和灯室相对于彼此移动并且平行于被处理物体的表面移动。 处理室具有支撑物体的台,用于将处理气体供给到处理室的气体入口,以及用于排出处理气体的气体出口。 将处理室和灯室分隔开的紫外线透射窗构件被固定到处理室。

    DESMEARING METHOD AND DESMEARING DEVICE
    2.
    发明申请
    DESMEARING METHOD AND DESMEARING DEVICE 审中-公开
    分离方法和装置设备

    公开(公告)号:US20150351251A1

    公开(公告)日:2015-12-03

    申请号:US14655046

    申请日:2013-12-26

    IPC分类号: H05K3/26

    摘要: Provided are a desmearing method and a desmearing device which are able to reliably remove a smear derived from any of an inorganic substance and an organic substance, and eliminate the need to use a chemical that requires a waste liquid treatment. The desmearing method of the present invention is directed to a desmearing method for a wiring substrate material that is a laminated body of insulating layers made from resin containing a filler and a conductive layer, and includes an ultraviolet irradiation treatment step for irradiating the wiring substrate material with ultraviolet beams with a wavelength of 220 nm or less, and a physical vibration treatment step for applying physical vibrations to the wiring substrate material which has undergone the ultraviolet irradiation treatment step.

    摘要翻译: 提供了能够可靠地除去来自任何无机物质和有机物质的污迹的除污方法和除污装置,并且不需要使用需要废液处理的化学品。 本发明的除污方法涉及一种布线基板材料的脱模方法,该布线基板材料是由含有填料和导电层的树脂制成的绝缘层的层叠体,并且包括用于照射布线基板材料的紫外线照射处理步骤 具有波长为220nm以下的紫外线,以及用于对经过紫外线照射处理工序的配线基板材料进行物理振动的物理振动处理工序。

    MICROCHIP
    3.
    发明申请
    MICROCHIP 审中-公开

    公开(公告)号:US20200255288A1

    公开(公告)日:2020-08-13

    申请号:US16758362

    申请日:2018-08-07

    IPC分类号: B81C3/00 B81C1/00

    摘要: Provided is a microchip that can achieve a favorable bonding state in the bonding portion between first and second substrates even if the microchip is large in size.A microchip includes a first substrate made of a resin and a second substrate made of a resin, the first substrate and the second substrates being bonded to each other, and a channel surrounded by a bonding portion between the first substrate and the second substrate is formed by a channel forming step formed at least in the first substrate. Further, a noncontact portion is formed to surround the bonding portion, and an angle 01 formed between a side wall surface of the channel forming step and a bonding surface continuous therewith satisfies θ1>90°.

    LIGHT IRRADIATION APPARATUS
    4.
    发明申请
    LIGHT IRRADIATION APPARATUS 审中-公开
    光照射装置

    公开(公告)号:US20160329223A1

    公开(公告)日:2016-11-10

    申请号:US15108063

    申请日:2014-11-21

    发明人: Kenichi HIROSE

    IPC分类号: H01L21/67 B08B5/00 B08B7/00

    摘要: A light irradiation apparatus that can uniformly treat the entire to-be-treated surface of a to-be-treated subject having a light irradiation apparatus including: a treatment chamber in which a to-be-treated subject is disposed; an ultraviolet emitting lamp for emitting vacuum ultraviolet rays to the to-be-treated subject; and gas supply means for supplying a treatment gas containing a source of active species to the treatment chamber. A gas supply port for supplying the treatment gas to the treatment chamber and a gas discharge port for discharging the gas in the treatment chamber are provided on respective sides of a to-be-treated subject placement area in the treatment chamber so as to form a gas flow channel through which the treatment gas flows from the gas supply port toward the gas discharge port in the treatment chamber. How much of a gas amount at the gas supply port reaches the gas discharge port is controlled to be 60 to 95%.

    摘要翻译: 一种光照射装置,其能够均匀地处理具有光照射装置的待处理对象物的整个待处理表面,所述被照射物体包括:设置被处理物体的处理室; 用于向被处理对象发射真空紫外线的紫外线发射灯; 以及用于将含有活性物质源的处理气体供给到处理室的气体供给装置。 将处理气体供给到处理室的气体供给口和用于排出处理室内的气体的气体排出口设置在处理室内的待处理对象放置区域的两侧,形成 气体流路,处理气体从气体供给口向处理室内的气体排出口流动。 气体供给口到达排气口的气体量控制在60〜95%。

    METHOD OF BONDING SUBSTRATES AND METHOD OF PRODUCING MICROCHIP

    公开(公告)号:US20190300662A1

    公开(公告)日:2019-10-03

    申请号:US16317469

    申请日:2017-06-27

    摘要: The present invention has as its object the provision of a method of bonding substrates, which can bond two substrates, at least one of which has warpage and undulation of a bonding surface, in a high adhesion state and a method of producing a microchip.In the method of bonding substrates according to the present invention, the first substrate is formed of a material having a deformable temperature at which the substrate deforms and which is higher than a deformable temperature of the second substrate, the method includes: a surface activation step of activating each of bonding surfaces of the first substrate and the second substrate; a stacking step of stacking the first substrate and the second substrate so that the respective bonding surfaces thereof are in contact with each other; and a deforming step of deforming the bonding surface of the second substrate to conform to a shape of the bonding surface of the first substrate, and the deforming step is performed by heating the stacked body of the first substrate and the second substrate obtained in the stacking step at a temperature not lower than the deformable temperature of the second substrate and lower than the deformable temperature of the first substrate.