公开(公告)号：US20240304703A1

公开(公告)日：2024-09-12

申请号：US18579330

申请日：2022-07-14

申请人： UNIVERSITY OF SOUTHERN CALIFORNIA

发明人： Ajey Poovannummoottil JACOB ,  Rehan Rashid KAPADIA

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/20 ,  H01L29/737 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/0254 ,  H01L21/02543 ,  H01L29/2003 ,  H01L29/66318 ,  H01L29/737 ,  H01L29/7786

摘要： A method for fabricating low defective non-planar bipolar heterostructure transistors includes a steps of providing a substrate that is coated with a first dielectric layer when the substrate is not composed of a dielectric material. A layer of a first semiconductor material is formed by template liquid phase (TLP) crystal growth wherein a second dielectric layer is disposed over the first semiconductor material. A trench is patterned into the second dielectric layer. An intermediate heterostructure is formed by epitaxially growing second semiconductor material in the trench to form a fin structure therein. Various power transistor structures can be formed from the intermediate heterostructure.

公开(公告)号：US20240282366A1

公开(公告)日：2024-08-22

申请号：US18571407

申请日：2022-06-20

申请人： UNIVERSITY OF SOUTHERN CALIFORNIA

发明人： Ajey Poovannummoottil JACOB ,  Akhilesh JAISWAL

IPC分类号： G11C11/419 ,  G11C11/418

CPC分类号： G11C11/419 ,  G11C11/418

摘要： A novel approach for improving the power, performance, area metric for AI computations by dynamically augmenting (doubling) the memory storage capacity uses novel eight transistor SRAM bit-cells.

公开(公告)号：US20240220840A1

公开(公告)日：2024-07-04

申请号：US18684145

申请日：2022-08-16

申请人： UNIVERSITY OF SOUTHERN CALIFORNIA

发明人： Ajey Poovannummoottil JACOB ,  Akhilesh Ramlaut JAISWAL ,  Ramesh KUDALIPPALLIYALIL

IPC分类号： G06N10/40

CPC分类号： G06N10/40

摘要： A heterogeneous quantum device includes an interposer, a qubit sources disposed over the interposer, and an electro-optic quantum transducer disposed over the interposer. The electro-optic quantum transducer being a frequency converter that converts microwave frequency to optical frequency coupled to the qubit sources by superconducting capacitive or inductive coupling.

公开(公告)号：US20210342991A1

公开(公告)日：2021-11-04

申请号：US17244183

申请日：2021-04-29

申请人： UNIVERSITY OF SOUTHERN CALIFORNIA

发明人： Ajey Poovannummoottil JACOB ,  John DAMOULAKIS ,  Akhilesh JAISWAL ,  Devanand Krishna SHENOY ,  Andrew RITTENBACH

IPC分类号： G06T7/00 ,  G06T7/30 ,  G06T3/40 ,  G06T11/00 ,  H01J37/28 ,  H01J37/244

摘要： A method for assuring that integrated circuits are free of malicious circuit insertions and/or IC design modifications through mask swapping/addition is provided. The method includes a step of comparing 3D tomographic images constructed from design GDS to the 3D tomographic images constructed from in-line fab metrology data.

公开(公告)号：US20240170055A1

公开(公告)日：2024-05-23

申请号：US18281662

申请日：2022-03-14

申请人： UNIVERSITY OF SOUTHERN CALIFORNIA

发明人： Ajey Poovannummoottil JACOB ,  Akhilesh Ramlaut JAISWAL ,  Ramesh KUDALIPPALLIYALIL ,  Sujith CHANDRAN

IPC分类号： G11C11/42 ,  G02F1/225 ,  G11C13/04

CPC分类号： G11C11/42 ,  G02F1/225 ,  G11C13/047 ,  G02F2203/15

摘要： An electro-optic random-access memory enables (1) ultra-fast write and read operation (2) featuring differential sensing (3) wavelength, and polarization multiplex high bandwidth memory access (4) enables very large-scale memory array for wafer scale ICs.