公开(公告)号：US20100327257A1

公开(公告)日：2010-12-30

申请号：US12880364

申请日：2010-09-13

Applicant: Tsuyoshi YAMAMOTO ,  Manabu MATSUDA

Inventor： Tsuyoshi YAMAMOTO ,  Manabu MATSUDA

IPC: H01L33/04 ,  H01L33/58

CPC classification number: H01S5/12 ,  H01S5/1025 ,  H01S5/124

Abstract: An optical semiconductor device is disclosed including an active region including an active layer and a diffraction grating having a λ/4 phase shift; passive waveguide regions each including a passive waveguide and a diffraction grating, disposed on the side of an emission facet and on the side of a rear facet sandwiching the active region between the passive waveguide regions, respectively; and an anti-reflection coating applied on the emission facet, wherein the passive waveguide region on the side of the emission facet has a length shorter than a length of the passive waveguide region on the side of the rear facet side.

Abstract translation: 公开了一种光学半导体器件，其包括有源区，其包括有源层和具有λ/ 4相移的衍射光栅; 无源波导区域各自包括无源波导和衍射光栅，分别设置在发射小面的侧面和后面的侧面，夹持有源区域在无源波导区域之间; 以及施加在所述发射面上的防反射涂层，其中在所述发射刻面侧的所述无源波导区域的长度短于所述后面侧的所述无源波导区域的长度。

公开(公告)号：US20090086785A1

公开(公告)日：2009-04-02

申请号：US12199507

申请日：2008-08-27

Applicant: Nobuaki HATORI ,  Tsuyoshi YAMAMOTO ,  Manabu MATSUDA ,  Yasuhiko ARAKAWA

Inventor： Nobuaki HATORI ,  Tsuyoshi YAMAMOTO ,  Manabu MATSUDA ,  Yasuhiko ARAKAWA

IPC: H01S5/125 ,  H01L33/00

CPC classification number: H01S5/341 ,  B82Y20/00 ,  B82Y40/00 ,  H01L33/02 ,  H01L33/30 ,  H01S5/0424 ,  H01S5/12 ,  H01S5/22 ,  H01S5/221 ,  H01S5/309 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/34313 ,  Y10S977/774

Abstract: A semiconductor light emitting device is provided with a GaAs substrate, a quantum dot active layer formed over the GaAs substrate, a GaAs layer formed above or below the quantum dot active layer, and a diffraction grating formed from InGaP or InGaAsP and periodically provided along an propagating direction of light in the GaAs layer.

Abstract translation: 半导体发光器件设置有GaAs衬底，在GaAs衬底上形成的量子点有源层，形成在量子点有源层上方或下方的GaAs层，以及由InGaP或InGaAsP形成的衍射光栅，并沿着 在GaAs层中传播光的方向。

公开(公告)号：US20120083151A1

公开(公告)日：2012-04-05

申请号：US13185970

申请日：2011-07-19

Applicant: Rie TAKADA ,  Tsuyoshi YAMAMOTO ,  Naoaki NAKAMURA ,  Harumi YAGI

Inventor： Rie TAKADA ,  Tsuyoshi YAMAMOTO ,  Naoaki NAKAMURA ,  Harumi YAGI

IPC: H01R4/26 ,  H01R43/20 ,  B23P11/00

CPC classification number: H01R13/635 ,  H01R43/26 ,  Y10T29/49821 ,  Y10T29/49822

Abstract: A method of detachment of a connector which is provided with a housing having connector pins to be inserted into a board and with a first member which is arranged between the housing and the board and through which the connector pins are inserted, the method including a process of pulling out the connector pins from the board. This process utilizes the lever principle, which uses the first member as a fulcrum and which uses any point on the housing as a point of action, so as to pull out the connector pins from the board.

Abstract translation: 一种连接器的拆卸方法，该连接器设置有具有插入板中的连接器针脚的壳体和布置在壳体和板之间的第一构件，并且连接器插脚穿过该第一构件插入，该方法包括： 从板上拉出连接器针脚。 该方法利用杠杆原理，其使用第一构件作为支点，并且将壳体上的任何点用作作用点，以便从板上拉出连接器销。

公开(公告)号：US20120007173A1

公开(公告)日：2012-01-12

申请号：US13177707

申请日：2011-07-07

Applicant: Tsuyoshi YAMAMOTO ,  Masakiyo SUMITOMO ,  Hitoshi YAMAGUCHI ,  Nozomu AKAGI ,  Yuma KAGATA

Inventor： Tsuyoshi YAMAMOTO ,  Masakiyo SUMITOMO ,  Hitoshi YAMAGUCHI ,  Nozomu AKAGI ,  Yuma KAGATA

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7813 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/66734 ,  H01L29/7811

Abstract: A semiconductor device includes: a substrate; multiple first and second conductive type regions on the substrate for providing a super junction structure; a channel layer on the super junction structure; a first conductive type layer in the channel layer; a contact second conductive type region in the channel layer; a gate electrode on the channel layer via a gate insulation film; a surface electrode on the channel layer; a backside electrode on the substrate opposite to the super junction structure; and an embedded second conductive type region. The embedded second conductive type region is disposed in a corresponding second conductive type region, protrudes into the channel layer, and contacts the contact second conductive type region. The embedded second conductive type region has an impurity concentration higher than the channel layer, and has a maximum impurity concentration at a position in the corresponding second conductive type region.

Abstract translation: 半导体器件包括：衬底; 用于提供超结结构的衬底上的多个第一和第二导电类型区域; 超级结结构上的沟道层; 沟道层中的第一导电类型层; 沟道层中的接触第二导电类型区域; 通过栅极绝缘膜在沟道层上形成栅电极; 沟道层上的表面电极; 衬底上的与超结结构相反的背面电极; 和嵌入式第二导电类型区域。 嵌入的第二导电类型区域设置在相应的第二导电类型区域中，突出到沟道层中，并且与接触第二导电类型区域接触。 嵌入的第二导电类型区域的杂质浓度高于沟道层，并且在相应的第二导电类型区域的位置具有最大的杂质浓度。

公开(公告)号：US20110081070A1

公开(公告)日：2011-04-07

申请号：US12892366

申请日：2010-09-28

Applicant: Tsuyoshi YAMAMOTO

Inventor： Tsuyoshi YAMAMOTO

IPC: G06K9/00

CPC classification number: G06T5/50 ,  G06T2207/10116 ,  G06T2207/30141 ,  G06T2207/30152

Abstract: In an apparatus for image processing realized by a computer executing an image processing program: an image generation unit generates, for a radiographic image of a structure constituted by a plurality of members being stacked and including an object to be examined, a density-correction image representing an influence of a transmission density of each of the plurality of members other than the object to be examined, on the basis of structure information on the plurality of members; and a removal unit removes the influence of the transmission density of each of the plurality of members other than the object to be examined, from at least a part of the radiographic image in which images of the plurality of members overlap, by using the density-correction image generated by the image generation unit.

Abstract translation: 在由执行图像处理程序的计算机实现的用于图像处理的装置中，图像生成单元生成由堆叠并包括被检体的多个构件构成的结构的放射线照相图像的密度校正图像 基于关于多个构件的结构信息，代表除被检查物以外的多个构件中的每一个的传播密度的影响; 并且去除单元从所述多个构件的图像重叠的所述放射线图像的至少一部分通过使用所述密度检测单元来除去所述被检查物体以外的所述多个构件中的每一个的透射密度的影响， 由图像生成单元生成的校正图像。

公开(公告)号：US20120185173A1

公开(公告)日：2012-07-19

申请号：US13345785

申请日：2012-01-09

Applicant: Tsuyoshi YAMAMOTO ,  Hideaki KOIZUMI ,  Tomihiro HASHIZUME ,  Seiji HEIKE

Inventor： Tsuyoshi YAMAMOTO ,  Hideaki KOIZUMI ,  Tomihiro HASHIZUME ,  Seiji HEIKE

IPC: G06F19/00

CPC classification number: A61B5/04001 ,  A61B5/0478 ,  A61B5/4076 ,  A61B5/4848 ,  A61B5/7275 ,  C12N13/00 ,  G01Q60/30 ,  G01Q60/44 ,  G01Q60/60

Abstract: The present invention provides a neural activity measurement system for measuring the electrical response of a neuron itself to achieve an electrical measurement of the neural activity itself, by providing a stimulator for applying an electrical stimulus to the neuron, as well as a Kelvin probe including a cantilever for detecting the electrical signal propagated through the neuron.

Abstract translation: 本发明提供了一种用于测量神经元本身的电响应以实现神经活动本身的电测量的神经活动测量系统，通过提供用于向神经元施加电刺激的刺激器，以及包括 用于检测通过神经元传播的电信号的悬臂。

公开(公告)号：US20110240719A1

公开(公告)日：2011-10-06

申请号：US13025398

申请日：2011-02-11

Applicant: Rie TAKADA ,  Tsuyoshi YAMAMOTO

Inventor： Rie TAKADA ,  Tsuyoshi YAMAMOTO

IPC: B23K1/018

CPC classification number: H05K13/0486 ,  H01L24/799 ,  H01L24/98 ,  H01L2224/16225 ,  H01L2924/01322 ,  H01L2924/00

Abstract: In the initial state, a part having a bottom electrode such as a BGA is attached to a substrate. A heat transfer material such as low melting point solder is allowed to fill a gap between the substrate and the part having the bottom electrode, and the heat transfer material and the BGA serving as the bottom electrode are heated. The heat transfer material and the BGA are melted by the heating so that the part having the bottom electrode is removed from the substrate.

Abstract translation: 在初始状态下，将具有诸如BGA的底部电极的部分附接到基板。 允许诸如低熔点焊料的传热材料填充基底和具有底部电极的部分之间的间隙，并且传热材料和用作底部电极的BGA被加热。 通过加热使传热材料和BGA熔融，使得具有底部电极的部分从基板去除。

公开(公告)号：US20080232417A1

公开(公告)日：2008-09-25

申请号：US12051449

申请日：2008-03-19

Applicant: Nobuaki HATORI ,  Tsuyoshi YAMAMOTO ,  Hisao SUDO ,  Yasuhiko ARAKAWA

Inventor： Nobuaki HATORI ,  Tsuyoshi YAMAMOTO ,  Hisao SUDO ,  Yasuhiko ARAKAWA

IPC: H01S5/30 ,  H01L21/02

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/0655 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3086 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173 ,  Y10S977/774

Abstract: A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.

Abstract translation: 半导体发光器件包括安装在GaAs衬底上的下包层，有源层和AlGaAs上覆层。 半导体发光器件具有包括AlGaAs上覆层的脊结构。 半导体发光器件还包括与AlGaAs上覆层的下侧接触设置的InGaAs蚀刻停止层。 InGaAs蚀刻停止层的带隙大于有源层的带隙。

公开(公告)号：US20080197377A1

公开(公告)日：2008-08-21

申请号：US12032250

申请日：2008-02-15

Applicant: Hisao SUDO ,  Tsuyoshi YAMAMOTO

Inventor： Hisao SUDO ,  Tsuyoshi YAMAMOTO

IPC: H01L33/00

CPC classification number: H01S5/2231 ,  H01L33/44 ,  H01S5/0425 ,  H01S5/2213 ,  H01S5/2214

Abstract: A photonic semiconductor device which includes a semiconductor layer having a ridge-form protruding part formed on a semiconductor substrate. A resin layer is formed on surface parts on both sides of the protruding part so that the protruding part is embedded, and a first insulating film includes an opening that is formed on the resin layer which exposes an upper surface of the protruding part and a portion of a upper surface of the resin layer on both sides of the protruding part. A first electrode is formed in the opening so as to cover the upper surface of the protruding part, and electrically couple to an upper part of the protruding part; and a second electrode, which electrically couples to the first electrode, is formed on the first electrode and the first insulation film.

Abstract translation: 一种光子半导体器件，包括形成在半导体衬底上的具有脊形突出部分的半导体层。 在突出部分的两侧的表面部分上形成树脂层，使得突起部分被嵌入，并且第一绝缘膜包括形成在暴露突出部分的上表面的树脂层上的开口和一部分 在突出部分的两侧上的树脂层的上表面。 第一电极形成在开口中以覆盖突出部分的上表面，并电连接到突出部分的上部; 并且电连接到第一电极的第二电极形成在第一电极和第一绝缘膜上。

公开(公告)号：US20100284059A1

公开(公告)日：2010-11-11

申请号：US12771275

申请日：2010-04-30

Applicant: Takashi SHIMIZU ,  Tsuyoshi YAMAMOTO

Inventor： Takashi SHIMIZU ,  Tsuyoshi YAMAMOTO

IPC: G02F2/00

CPC classification number: H04B10/677

Abstract: A demodulator includes a splitter, a first dielectric substance, and a combiner. The splitter splits a differential phase shift keying optical signal into a first light beam and a second light beam and outputs the first light beam to a first optical path and the second light beam to a second optical path. The first dielectric substance is disposed in the first optical path and has a refractive index higher than the average refractive index of the second optical path. The combiner combines the first light beam and the second light beam and causes the beams to interfere with each other. The difference in length between the first and second optical paths and the refractive index of the first dielectric substance are set such that the first light beam is delayed by one bit with respect to the second light beam.

Abstract translation: 解调器包括分路器，第一电介质物质和组合器。 分离器将差分相移键控光信号分离成第一光束和第二光束，并将第一光束输出到第一光路，将第二光束输出到第二光路。 第一电介质物质设置在第一光路中，折射率高于第二光路的平均折射率。 组合器组合第一光束和第二光束并且使光束彼此干涉。 第一和第二光路之间的长度差和第一介电物质的折射率之间被设定为使得第一光束相对于第二光束延迟一位。