Abstract:
There is provided a semiconductor device including: a circuit board formed by bonding a first and a second metal plates to both surfaces of an insulating substrate respectively, at least one semiconductor element to be bonded to an external surface of the first metal plate through a first solder, and a radiating base plate to be bonded to an external surface of the second metal plate through a second solder, wherein the first and the second solders are constituted by solder materials of the same type, and a ratio of a sum of thicknesses of the first and the second metal plates to a thickness of the insulating substrate is set in a predetermined range to ensure an endurance to a temperature stress of each of the first and the second solders.
Abstract:
A bonding agent for metals or ceramics comprising 0.25 to 18.0% by weight of a powder of Mg and 25 to 50% by weight of a hydroxyl solvent, the balance of its composition being a powder of AlN. The bonding agent having the constituents stated above has a large amount of reaction heat generated by the reaction of its constituents. This reaction heat destroys thermally any strong oxide film existing on the surface of a base body or a part to be joined thereto, and forming a barrier layer hindering their bonding when the base body and the part to be joined thereto are of an aluminum alloy.
Abstract:
There is provided a semiconductor device including: a circuit board formed by bonding a first and a second metal plates to both surfaces of an insulating substrate respectively, at least one semiconductor element to be bonded to an external surface of the first metal plate through a first solder, and a radiating base plate to be bonded to an external surface of the second metal plate through a second solder, wherein the first and the second solders are constituted by solder materials of the same type, and a ratio of a sum of thicknesses of the first and the second metal plates to a thickness of the insulating substrate is set in a predetermined range to ensure an endurance to a temperature stress of each of the first and the second solders.