SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20100308465A1

    公开(公告)日:2010-12-09

    申请号:US12794012

    申请日:2010-06-04

    Abstract: There is provided a semiconductor device including: a circuit board formed by bonding a first and a second metal plates to both surfaces of an insulating substrate respectively, at least one semiconductor element to be bonded to an external surface of the first metal plate through a first solder, and a radiating base plate to be bonded to an external surface of the second metal plate through a second solder, wherein the first and the second solders are constituted by solder materials of the same type, and a ratio of a sum of thicknesses of the first and the second metal plates to a thickness of the insulating substrate is set in a predetermined range to ensure an endurance to a temperature stress of each of the first and the second solders.

    Abstract translation: 提供了一种半导体器件,包括:电路板,其通过将第一和第二金属板分别接合到绝缘基板的两个表面而形成;至少一个半导体元件,其将通过第一和第二金属板接合到第一金属板的外表面 焊料和散热基板,其通过第二焊料与第二金属板的外表面接合,其中第一和第二焊料由相同类型的焊料构成,并且厚度之和的比率 将绝缘基板的厚度的第一金属板和第二金属板设定在预定范围内,以确保第一和第二焊料各自的温度应力的耐久性。

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