公开(公告)号：US20130017683A1

公开(公告)日：2013-01-17

申请号：US13543018

申请日：2012-07-06

申请人： Tsubasa HONKE ,  Shin HARADA ,  Kyoko OKITA

发明人： Tsubasa HONKE ,  Shin HARADA ,  Kyoko OKITA

IPC分类号： H01L21/316 ,  H01L21/311

CPC分类号： H01L29/7802 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/045 ,  H01L21/049 ,  H01L29/1608 ,  H01L29/66068

摘要： A silicon carbide substrate is prepared. By exposing the silicon carbide substrate to an atmosphere having a nitrogen dioxide concentration greater than or equal to 2 μg/m3, an oxide film is formed on the silicon carbide substrate.

摘要翻译： 制备碳化硅衬底。 通过将碳化硅衬底暴露于二氧化氮浓度大于或等于2μg/ m 3的气氛中，在碳化硅衬底上形成氧化物膜。

公开(公告)号：US20110278594A1

公开(公告)日：2011-11-17

申请号：US13104247

申请日：2011-05-10

申请人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

发明人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

IPC分类号： H01L29/12 ,  C30B23/02 ,  H01L21/20 ,  B32B13/04

CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/0475 ,  H01L21/2007 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide.

摘要翻译： 一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热所述坩埚中的所述基底基板而形成与所述SiC基板的主表面接触的碳化硅的基底层，以落入等于或高于构成所述基底基板的碳化硅的升华温度的温度范围内。 坩埚具有内壁，其至少一部分设置有由碳化硅制成的涂层。

公开(公告)号：US20110198027A1

公开(公告)日：2011-08-18

申请号：US13025879

申请日：2011-02-11

申请人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

发明人： Taro NISHIGUCHI ,  Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Hiroki INOUE ,  Yasuo NAMIKAWA

IPC分类号： C09J5/10

CPC分类号： H01L29/7802 ,  H01L21/02002 ,  H01L21/7602 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/66068

摘要： A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized.

摘要翻译： 基底部分和第一和第二碳化硅衬底设置在处理室中，使得第一碳化硅衬底的第一侧面和第二碳化硅衬底的侧表面彼此面对。 处理室具有内表面，其至少一部分被包含Ta原子和C原子的吸收部分覆盖。 为了将第一和第二侧表面彼此连接，处理室中的温度增加到达或超过碳化硅可以升华的温度。 在增加温度的步骤中，吸收部分的至少一部分被碳化。

公开(公告)号：US20120304839A1

公开(公告)日：2012-12-06

申请号：US13484724

申请日：2012-05-31

申请人： Kyoko OKITA

发明人： Kyoko OKITA

IPC分类号： B26D3/28 ,  B26D1/46

CPC分类号： B28D5/045 ,  B28D5/04 ,  C30B29/36 ,  C30B33/00 ,  C30B33/06 ,  Y10T83/04

摘要： A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide and obtaining a substrate by cutting the ingot. Then, in the step of obtaining a substrate, cutting proceeds in a direction α in which an angle β formed with respect to a direction or a direction of the ingot is 15°±5° in an orthogonal projection on a {0001} plane.

摘要翻译： 制造碳化硅衬底的方法包括制备单晶碳化硅锭并通过切割锭获得衬底的步骤。 然后，在获得基板的工序中，沿着角度＆bgr; 在{0001}平面上的正交投影中，相对于块的<11-20>方向或<1-100>方向形成的角度为15°±5°。

公开(公告)号：US20120325196A1

公开(公告)日：2012-12-27

申请号：US13530486

申请日：2012-06-22

申请人： Kyoko OKITA ,  Shinsuke Fujiwara

发明人： Kyoko OKITA ,  Shinsuke Fujiwara

IPC分类号： H01L21/304

CPC分类号： H01L21/02021 ,  C30B29/36 ,  C30B33/00 ,  C30B33/06 ,  H01L29/045 ,  H01L29/1608

摘要： A method for manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide, obtaining a silicon carbide substrate by cutting the ingot, and forming a chamfer portion in a region including an outer peripheral surface of the silicon carbide substrate. In the step of obtaining the silicon carbide substrate, the ingot is cut such that a main surface of the silicon carbide substrate forms an angle of not less than 10° with respect to a {0001} plane.

摘要翻译： 碳化硅基板的制造方法包括以下步骤：制备单晶碳化硅锭，通过切割锭获得碳化硅基体，并在包括碳化硅基板的外周表面的区域中形成倒角部分。 在获得碳化硅衬底的步骤中，切割该锭，使得碳化硅衬底的主表面相对于{0001}面形成不小于10°的角度。