发明申请
- 专利标题： METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造碳化硅衬底的方法，制造半导体器件的方法，碳化硅衬底和半导体器件
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申请号： US13104247申请日： 2011-05-10
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公开(公告)号： US20110278594A1公开(公告)日： 2011-11-17
- 发明人: Taro NISHIGUCHI , Makoto SASAKI , Shin HARADA , Kyoko OKITA , Hiroki INOUE , Yasuo NAMIKAWA
- 申请人： Taro NISHIGUCHI , Makoto SASAKI , Shin HARADA , Kyoko OKITA , Hiroki INOUE , Yasuo NAMIKAWA
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2010-111976 20100514
- 主分类号： H01L29/12
- IPC分类号： H01L29/12 ; C30B23/02 ; H01L21/20 ; B32B13/04
摘要：
A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide.
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