公开(公告)号：US20120040162A1

公开(公告)日：2012-02-16

申请号：US12854734

申请日：2010-08-11

Applicant: Tsai-Yu Huang ,  Ching-Kai Lin

Inventor： Tsai-Yu Huang ,  Ching-Kai Lin

IPC: B32B18/00 ,  H01L21/314 ,  C01G23/047

CPC classification number: H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L28/40

Abstract: A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150° C. to about 350° C. and forming a second portion of titanium dioxide at a temperature of from about 350° C. to about 600° C. A high-k dielectric material is also disclosed.

Abstract translation: 一种形成高k电介质材料的方法，包括形成二氧化钛的至少两部分，二氧化钛的至少两部分包括包含无定形二氧化钛的第一部分和包含金红石型二氧化钛的第二部分。 一种形成高k介电材料的方法，包括在约150℃至约350℃的温度下形成二氧化钛的第一部分，并在约350℃的温度下形成第二部分二氧化钛 C.至约600℃。还公开了高k电介质材料。

公开(公告)号：US08420208B2

公开(公告)日：2013-04-16

申请号：US12854734

申请日：2010-08-11

Applicant: Tsai-Yu Huang ,  Ching-Kai Lin

Inventor： Tsai-Yu Huang ,  Ching-Kai Lin

IPC: B32B5/00 ,  C01G23/047 ,  C23C16/00

CPC classification number: H01L21/02186 ,  H01L21/022 ,  H01L21/0228 ,  H01L28/40

Abstract: A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150° C. to about 350° C. and forming a second portion of titanium dioxide at a temperature of from about 350° C. to about 600° C. A high-k dielectric material is also disclosed.

Abstract translation: 一种形成高k电介质材料的方法，包括形成二氧化钛的至少两部分，二氧化钛的至少两部分包括包含无定形二氧化钛的第一部分和包含金红石型二氧化钛的第二部分。 一种形成高k介电材料的方法，包括在约150℃至约350℃的温度下形成二氧化钛的第一部分，并在约350℃的温度下形成第二部分二氧化钛 C.至约600℃。还公开了高k电介质材料。

公开(公告)号：US06183940B2

公开(公告)日：2001-02-06

申请号：US09040480

申请日：1998-03-17

Applicant: Chen-Yu Wang ,  Tseng You Syau ,  Ching-Kai Lin

Inventor： Chen-Yu Wang ,  Tseng You Syau ,  Ching-Kai Lin

IPC: G03F700

CPC classification number: G03F7/40 ,  C23F1/02 ,  C23F4/00 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/32139

Abstract: A method of retaining the integrity of a photoresist pattern is provided where the patterned photoresist is treated prior to etching the principle layer. The pre-etch treatment encompasses a plasma treatment. In some embodiments employing an anti-reflective coating (ARC) layer, an isolation/protective layer is used to isolate the ARC from the photoresist. In some embodiments, the pre-etch treatment, advantageously provides for patterning the isolation/protection layer.

Abstract translation: 提供了保留光致抗蚀剂图案的完整性的方法，其中在蚀刻原理层之前处理图案化的光致抗蚀剂。 预蚀刻处理包括等离子体处理。 在采用抗反射涂层（ARC）层的一些实施例中，隔离/保护层用于将ARC与光致抗蚀剂隔离。 在一些实施例中，预蚀刻处理有利地提供图案化隔离/保护层。

公开(公告)号：US08222163B2

公开(公告)日：2012-07-17

申请号：US12851561

申请日：2010-08-06

Applicant: Chao-Wen Lay ,  Ching-Kai Lin

Inventor： Chao-Wen Lay ,  Ching-Kai Lin

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/302 ,  H01L21/02238 ,  H01L21/30604

Abstract: A recess is usually formed on the sidewall of the trench due to the dry etch. The recess may influence the profile of an element formed in the trench. Therefore, a method of flattening a recess in a substrate is provided. The method includes: first, providing a substrate having a trench therein, wherein the trench has a sidewall comprising a recessed section and an unrecessed section. Then, a recessed section oxidation rate change step is performed to change an oxidation rate of the recessed section. Later, an oxidizing process is performed to the substrate so as to form a first oxide layer on the recessed section, and a second oxide layer on the unrecessed section, wherein the second oxide layer is thicker than the first oxide layer. Finally, the first oxide layer and the second oxide layer are removed to form a flattened sidewall of the trench.

Abstract translation: 由于干蚀刻，凹槽通常形成在沟槽的侧壁上。 凹槽可影响形成在沟槽中的元件的轮廓。 因此，提供了在基板中使凹部变平的方法。 该方法包括：首先，提供其中具有沟槽的衬底，其中沟槽具有包括凹陷部分和未加工部分的侧壁。 然后，进行凹部氧化速度变化步骤，以改变凹部的氧化速率。 然后，对基板进行氧化处理，以在凹部上形成第一氧化物层，在未加工部分上形成第二氧化物层，其中第二氧化物层比第一氧化物层厚。 最后，去除第一氧化物层和第二氧化物层以形成沟槽的扁平侧壁。

公开(公告)号：US20120034791A1

公开(公告)日：2012-02-09

申请号：US12851561

申请日：2010-08-06

Applicant: Chao-Wen Lay ,  Ching-Kai Lin

Inventor： Chao-Wen Lay ,  Ching-Kai Lin

IPC: H01L21/316

CPC classification number: H01L21/302 ,  H01L21/02238 ,  H01L21/30604

Abstract: A recess is usually formed on the sidewall of the trench due to the dry etch. The recess may influence the profile of an element formed in the trench. Therefore, a method of flattening a recess in a substrate is provided. The method includes: first, providing a substrate having a trench therein, wherein the trench has a sidewall comprising a recessed section and an unrecessed section. Then, a recessed section oxidation rate change step is performed to change an oxidation rate of the recessed section. Later, an oxidizing process is performed to the substrate so as to form a first oxide layer on the recessed section, and a second oxide layer on the unrecessed section, wherein the second oxide layer is thicker than the first oxide layer. Finally, the first oxide layer and the second oxide layer are removed to form a flattened sidewall of the trench.

Abstract translation: 由于干蚀刻，凹槽通常形成在沟槽的侧壁上。 凹槽可影响形成在沟槽中的元件的轮廓。 因此，提供了在基板中使凹部变平的方法。 该方法包括：首先，提供其中具有沟槽的衬底，其中沟槽具有包括凹陷部分和未加工部分的侧壁。 然后，进行凹部氧化速度变化步骤，以改变凹部的氧化速率。 然后，对基板进行氧化处理，以在凹部上形成第一氧化物层，在未加工部分上形成第二氧化物层，其中第二氧化物层比第一氧化物层厚。 最后，去除第一氧化物层和第二氧化物层以形成沟槽的扁平侧壁。