Invention Application
US20120040162A1 HIGH-K DIELECTRIC MATERIAL AND METHODS OF FORMING THE HIGH-K DIELECTRIC MATERIAL
有权
高K介电材料及其制备高K电介质材料的方法
- Patent Title: HIGH-K DIELECTRIC MATERIAL AND METHODS OF FORMING THE HIGH-K DIELECTRIC MATERIAL
- Patent Title (中): 高K介电材料及其制备高K电介质材料的方法
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Application No.: US12854734Application Date: 2010-08-11
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Publication No.: US20120040162A1Publication Date: 2012-02-16
- Inventor: Tsai-Yu Huang , Ching-Kai Lin
- Applicant: Tsai-Yu Huang , Ching-Kai Lin
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Main IPC: B32B18/00
- IPC: B32B18/00 ; H01L21/314 ; C01G23/047
Abstract:
A method of forming a high-k dielectric material including forming at least two portions of titanium dioxide, the at least two portions of titanium dioxide comprising a first portion comprising amorphous titanium dioxide and a second portion comprising rutile titanium dioxide. A method of forming a high-k dielectric material including forming a first portion of titanium dioxide at a temperature of from about 150° C. to about 350° C. and forming a second portion of titanium dioxide at a temperature of from about 350° C. to about 600° C. A high-k dielectric material is also disclosed.
Public/Granted literature
- US08420208B2 High-k dielectric material and methods of forming the high-k dielectric material Public/Granted day:2013-04-16
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