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公开(公告)号：US07391459B2
公开(公告)日：2008-06-24
申请号：US11069717
申请日：2005-02-28
申请人： Toshifumi Wakano , Keiji Mabuchi
发明人： Toshifumi Wakano , Keiji Mabuchi
CPC分类号： H04N5/2254
摘要： An optical system for a CMOS sensor includes an aspherical lens with which an exit pupil distance appears short in a central region of an imaging plane and long in a peripheral region of the imaging plane. The aspherical lens functions such that the exit pupil distance monotonously increases from a central region of the imaging plane toward a peripheral region of the imaging plane. In addition, pupil correction is performed in accordance with an exit pupil distance d which satisfies (d1+d2)/2
摘要翻译： 用于CMOS传感器的光学系统包括非球面透镜，出射光瞳距离在成像平面的中心区域中短，并且在成像平面的周边区域中长。 非球面透镜的功能使得出射光瞳距离从成像平面的中心区域朝向成像平面的周边区域单调增加。 此外，根据满足（d 1 + d 2）/ 2
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2.发明授权Solid state image pickup device having a capacitor structure made up of a plurality of capacitors 有权具有由多个电容器组成的电容器结构的固体摄像装置公开(公告)号：US09077922B2
公开(公告)日：2015-07-07
申请号：US11176476
申请日：2005-07-07
申请人： Toshifumi Wakano , Keiji Mabuchi
发明人： Toshifumi Wakano , Keiji Mabuchi
CPC分类号： H04N5/3575 , H04N5/372 , H04N5/37455 , H04N5/378
摘要： A solid state image pickup device is provided that includes a pixel array unit having a plurality of pixels and a signal processing circuit that has a capacitor operatively configured to process a respective signal output from each of the plurality of pixels. The capacitor is operatively configured as a stacked capacitor or a trench capacitor.
摘要翻译： 提供一种固态图像拾取装置，其包括具有多个像素的像素阵列单元和具有可操作地配置为处理从多个像素中的每个像素输出的相应信号的电容器的信号处理电路。 电容器可操作地配置为堆叠电容器或沟槽电容器。
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公开(公告)号：US07749796B2
公开(公告)日：2010-07-06
申请号：US12263604
申请日：2008-11-03
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14643
摘要： A method for manufacturing a solid state image pickup device in which a semiconductor substrate includes a pixel region where a plurality of pixels are arranged, each pixel including a signal charge accumulating portion and a transistor, and a pixel well of a first conductive type shared by the respective pixels, the method comprising: (a) a first step of forming a first impurity doped region by ion-implanting an impurity of the first conductive type to a surface of the semiconductor substrate together with the pixel well at a surface density of 1×1014 cm−2 or less in total; (b) a second step of forming an interlayer film after the first step; (c) a third step of forming a hole for providing a contact electrode in the interlayer film on the first impurity doped region; (d) a fourth step of forming a contact portion by ion-implanting an impurity of the first conductive type through the hole; and (e) a fifth step of forming the contact electrode by filling the hole.
摘要翻译： 一种固态摄像装置的制造方法，其中半导体衬底包括排列有多个像素的像素区域，每个像素包括信号电荷累积部分和晶体管，以及由第一导电类型共享的像素阱， 所述方法包括：（a）第一步骤，通过以下方式形成第一杂质掺杂区域：将所述第一导电类型的杂质与所述像素阱一起以1的表面密度离子注入所述半导体衬底的表面 ×1014 cm -2以下; （b）在第一步骤之后形成中间膜的第二步骤; （c）在第一杂质掺杂区域上形成用于在层间膜中提供接触电极的孔的第三步骤; （d）通过所述孔离子注入第一导电类型的杂质形成接触部分的第四步骤; 和（e）通过填充孔形成接触电极的第五步骤。
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公开(公告)号：US07675095B2
公开(公告)日：2010-03-09
申请号：US11113633
申请日：2005-04-25
申请人： Keiji Mabuchi , Toshifumi Wakano , Ken Koseki
发明人： Keiji Mabuchi , Toshifumi Wakano , Ken Koseki
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14643 , H04N5/357 , H04N5/3658 , H04N5/3741 , H04N5/3742 , H04N5/3745 , H04N5/37455 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device includes a pixel array including pixels two-dimensionally arranged in matrix form, with a signal line provided in each column of the arranged pixels, each pixel including a photoelectric conversion element, and a fixing unit fixing the potential of the signal line, which is obtained before the pixel has an operating period, to an intermediate potential between a first power-supply potential and a second power-supply potential.
摘要翻译： 固态成像装置包括像素阵列，其包括以矩阵形式二维排列的像素，在布置的像素的每列中提供信号线，每个像素包括光电转换元件，以及固定单元， 在像素具有工作周期之前获得的信号线到第一电源电位和第二电源电位之间的中间电位。
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公开(公告)号：US20090068787A1
公开(公告)日：2009-03-12
申请号：US12263604
申请日：2008-11-03
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14643
摘要： A method for manufacturing a solid state image pickup device in which a semiconductor substrate includes a pixel region where a plurality of pixels are arranged, each pixel including a signal charge accumulating portion and a transistor, and a pixel well of a first conductive type shared by the respective pixels, the method comprising: (a) a first step of forming a first impurity doped region by ion-implanting an impurity of the first conductive type to a surface of the semiconductor substrate together with the pixel well at a surface density of 1×1014 cm−2 or less in total; (b) a second step of forming an interlayer film after the first step; (c) a third step of forming a hole for providing a contact electrode in the interlayer film on the first impurity doped region; (d) a fourth step of forming a contact portion by ion-implanting an impurity of the first conductive type through the hole; and (e) a fifth step of forming the contact electrode by filling the hole.
摘要翻译： 一种固态摄像装置的制造方法，其中半导体衬底包括排列有多个像素的像素区域，每个像素包括信号电荷累积部分和晶体管，以及由第一导电类型共享的像素阱， 所述方法包括：（a）第一步骤，通过以1×1014的表面密度与像素阱一起离子注入第一导电类型的杂质到半导体衬底的表面来形成第一杂质掺杂区域 共计-2厘米-2以下; （b）在第一步骤之后形成中间膜的第二步骤; （c）在第一杂质掺杂区域上形成用于在层间膜中提供接触电极的孔的第三步骤; （d）通过所述孔离子注入第一导电类型的杂质形成接触部分的第四步骤; 和（e）通过填充孔形成接触电极的第五步骤。
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公开(公告)号：US20050190284A1
公开(公告)日：2005-09-01
申请号：US11069717
申请日：2005-02-28
申请人： Toshifumi Wakano , Keiji Mabuchi
发明人： Toshifumi Wakano , Keiji Mabuchi
CPC分类号： H04N5/2254
摘要： An optical system for a CMOS sensor includes an aspherical lens with which an exit pupil distance appears short in a central region of an imaging plane and long in a peripheral region of the imaging plane. The aspherical lens functions such that the exit pupil distance monotonously increases from a central region of the imaging plane toward a peripheral region of the imaging plane. In addition, pupil correction is performed in accordance with an exit pupil distance d which satisfies (d1+d2)/2
摘要翻译： 用于CMOS传感器的光学系统包括非球面透镜，出射光瞳距离在成像平面的中心区域中短，并且在成像平面的周边区域中长。 非球面透镜的功能使得出射光瞳距离从成像平面的中心区域朝向成像平面的周边区域单调增加。 此外，根据满足（d 1 + d 2）/ 2
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公开(公告)号：US07978251B2
公开(公告)日：2011-07-12
申请号：US12214692
申请日：2008-06-20
申请人： Toshifumi Wakano , Keiji Mabuchi
发明人： Toshifumi Wakano , Keiji Mabuchi
IPC分类号： H04N5/225
CPC分类号： H04N5/2254
摘要： An optical system for a CMOS sensor includes an aspherical lens with which an exit pupil distance appears short in a central region of an imaging plane and long in a peripheral region of the imaging plane. The aspherical lens functions such that the exit pupil distance monotonously increases from a central region of the imaging plane toward a peripheral region of the imaging plane. In addition, pupil correction is performed in accordance with an exit pupil distance d which satisfies (d1+d2)/2
摘要翻译： 用于CMOS传感器的光学系统包括非球面透镜，出射光瞳距离在成像平面的中心区域中短，并且在成像平面的周边区域中长。 非球面透镜的功能使得出射光瞳距离从成像平面的中心区域朝向成像平面的周边区域单调增加。 此外，根据满足（d1 + d2）/ 2
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公开(公告)号：US20080266442A1
公开(公告)日：2008-10-30
申请号：US12214692
申请日：2008-06-20
申请人： Toshifumi Wakano , Keiji Mabuchi
发明人： Toshifumi Wakano , Keiji Mabuchi
IPC分类号： H04N5/225
CPC分类号： H04N5/2254
摘要： An optical system for a CMOS sensor includes an aspherical lens with which an exit pupil distance appears short in a central region of an imaging plane and long in a peripheral region of the imaging plane. The aspherical lens functions such that the exit pupil distance monotonously increases from a central region of the imaging plane toward a peripheral region of the imaging plane. In addition, pupil correction is performed in accordance with an exit pupil distance d which satisfies (d1+d2)/2≦d≦d2, where d1 is the exit pupil distance at the center of the imaging plane and d2 is the exit pupil distance at the edge of the imaging plane.
摘要翻译： 用于CMOS传感器的光学系统包括非球面透镜，出射光瞳距离在成像平面的中心区域中短，并且在成像平面的周边区域中长。 非球面透镜的功能使得出射光瞳距离从成像平面的中心区域朝向成像平面的周边区域单调增加。 另外，根据满足（d 1 + d 2）/ 2 <= d <= d 2的出射光瞳距离d执行光瞳校正，其中d 1是成像平面中心处的出射光瞳距离， d 2是成像平面边缘处的出射光瞳距离。
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公开(公告)号：US20060060854A1
公开(公告)日：2006-03-23
申请号：US11208959
申请日：2005-08-22
IPC分类号： H01L29/04
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14643
摘要： To reduce white spots by optimizing an impurity concentration of a p-type impurity doped region of a well contact, a size of a contact portion, a position of an n-type region serving as a photoelectric converter, and so on. In a solid state image pickup device in which a semiconductor substrate 11 includes a pixel region where a plurality of pixels are arranged, each pixel including a photoelectric converter 21, and a pixel well 12 shared by the respective pixels, a well contact 14 supplying a reference voltage to the pixel well 12 includes: an electrode 15 supplying a reference voltage; a p-type impurity doped region 16 placed in a surface of the pixel well 12; and a contact portion 17 placed in the p-type impurity doped region 16 so as to be connected to the electrode 15 and having a higher concentration than the p-type impurity doped region 16. The p-type impurity doped region 16 is doped with at least a p-type impurity, with an impurity concentration of 1×1019 cm−3 or less.
摘要翻译： 通过优化阱接触的p型杂质掺杂区域的杂质浓度，接触部分的尺寸，用作光电转换器的n型区域的位置等来减少白点。
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公开(公告)号：US20050248674A1
公开(公告)日：2005-11-10
申请号：US11113633
申请日：2005-04-25
申请人： Keiji Mabuchi , Toshifumi Wakano , Ken Koseki
发明人： Keiji Mabuchi , Toshifumi Wakano , Ken Koseki
IPC分类号： H01L27/146 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14612 , H01L27/14643 , H04N5/357 , H04N5/3658 , H04N5/3741 , H04N5/3742 , H04N5/3745 , H04N5/37455 , H04N5/37457 , H04N5/378
摘要： A solid-state imaging device includes a pixel array including pixels two-dimensionally arranged in matrix form, with a signal line provided in each column of the arranged pixels, each pixel including a photoelectric conversion element, and a fixing unit fixing the potential of the signal line, which is obtained before the pixel has an operating period, to an intermediate potential between a first power-supply potential and a second power-supply potential.
摘要翻译： 固态成像装置包括像素阵列，其包括以矩阵形式二维排列的像素，在布置的像素的每列中提供信号线，每个像素包括光电转换元件，以及固定单元， 在像素具有工作周期之前获得的信号线到第一电源电位和第二电源电位之间的中间电位。
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