To reduce white spots by optimizing an impurity concentration of a p-type impurity doped region of a well contact, a size of a contact portion, a position of an n-type region serving as a photoelectric converter, and so on. In a solid state image pickup device in which a semiconductor substrate 11 includes a pixel region where a plurality of pixels are arranged, each pixel including a photoelectric converter 21, and a pixel well 12 shared by the respective pixels, a well contact 14 supplying a reference voltage to the pixel well 12 includes: an electrode 15 supplying a reference voltage; a p-type impurity doped region 16 placed in a surface of the pixel well 12; and a contact portion 17 placed in the p-type impurity doped region 16 so as to be connected to the electrode 15 and having a higher concentration than the p-type impurity doped region 16. The p-type impurity doped region 16 is doped with at least a p-type impurity, with an impurity concentration of 1×1019 cm−3 or less.