PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM
    2.
    发明申请
    PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM 审中-公开
    磷光体膜和生产磷光体膜的方法

    公开(公告)号:US20100221420A1

    公开(公告)日:2010-09-02

    申请号:US12779648

    申请日:2010-05-13

    IPC分类号: B05D5/06

    摘要: A phosphor film high in efficiency and less in luminescence irregularity and a method of producing the phosphor film are provided. The phosphor film includes a zinc sulfide compound containing an additive element(s). The additive element is at least one element selected from the group consisting of Ag, Cu and Au; the concentration of the additive element is 0.2 mol % or more and 5 mol % or less with respect to Zn; and the film thickness of the phosphor film is 10 nm or more and 2 um or less.

    摘要翻译: 提供了效率高,发光不均匀性低的荧光体膜以及荧光体膜的制造方法。 荧光体膜包括含有添加元素的硫化锌化合物。 添加元素是选自Ag,Cu和Au中的至少一种元素; 相对于Zn,添加元素的浓度为0.2摩尔%以上且5摩尔%以下。 荧光体膜的膜厚为10nm以上且2μm以下。

    Light emitting device and method of producing a light emitting device
    3.
    发明授权
    Light emitting device and method of producing a light emitting device 有权
    发光装置及其制造方法

    公开(公告)号:US07768031B2

    公开(公告)日:2010-08-03

    申请号:US11677251

    申请日:2007-02-21

    IPC分类号: H01L33/26 H05B33/14

    摘要: To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first portion containing Zn and at least one element chosen from S and Se as its constituent elements; and a second portion containing at least one element chosen from Cu and Ag and at least one element chosen from S and Se as its constituent elements; the first layer is made of a light emitting layer formed of at least one element chosen from S and Se and of Zn; and, in the second layer, the second portion has a cross section parallel to the substrate which tapers toward the first layer.

    摘要翻译: 为了提供发光效率优异的直流驱动型无机发光装置,提供了一种发光装置,包括:基板; 以及层叠在所述基板上的第一层和第二层,其中所述第二层由包含Zn的第一部分和选自S和Se的至少一种元素作为其构成元素形成; 和含有选自Cu和Ag中的至少一种元素的第二部分和选自S和Se的至少一种元素作为其组成元素; 第一层由由至少一种选自S和Se的元素和Zn形成的发光层制成; 并且在第二层中,第二部分具有平行于基板的横截面朝向第一层逐渐变细的横截面。

    Method for producing light-emitting film and light-emitting device
    4.
    发明授权
    Method for producing light-emitting film and light-emitting device 失效
    发光膜和发光装置的制造方法

    公开(公告)号:US08574955B2

    公开(公告)日:2013-11-05

    申请号:US13297027

    申请日:2011-11-15

    IPC分类号: H01L21/00 H01L29/24

    摘要: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

    摘要翻译: 提供一种具有可控电阻率的发光膜和可以使用这种发光膜在低电压下驱动的高亮度发光装置。 发光膜包含Cu作为添加元素,作为基材的硫化锌化合物,其中硫化锌化合物包括柱状ZnS晶体,ZnS晶体与ZnS晶体接触的晶界上由硫化铜形成的部位 彼此。

    LIGHT-EMITTING FILM, LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF
    5.
    发明申请
    LIGHT-EMITTING FILM, LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF 有权
    发光膜,发光装置及其制造方法

    公开(公告)号:US20090039378A1

    公开(公告)日:2009-02-12

    申请号:US12185261

    申请日:2008-08-04

    IPC分类号: H01L33/00 H01L21/00

    摘要: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

    摘要翻译: 提供一种具有可控电阻率的发光膜和可以使用这种发光膜在低电压下驱动的高亮度发光装置。 发光膜包含Cu作为添加元素,作为基材的硫化锌化合物,其中硫化锌化合物包括柱状ZnS晶体,ZnS晶体与ZnS晶体接触的晶界上由硫化铜形成的部位 彼此。

    LIGHT EMITTING STRUCTURE AND LIGHT EMITTING DEVICE
    6.
    发明申请
    LIGHT EMITTING STRUCTURE AND LIGHT EMITTING DEVICE 失效
    发光结构和发光装置

    公开(公告)号:US20070126351A1

    公开(公告)日:2007-06-07

    申请号:US11564385

    申请日:2006-11-29

    IPC分类号: H01J1/62 H01J63/04

    CPC分类号: H01J29/89 G02B1/02

    摘要: Provided is a light emitting material in which: a light emitting layer comprising a columnar part of which a cross-sectional shape is column such as cylindrical column, and a light emitting part of which a cross-sectional shape is cone or pyramid; and light generated in the light emitting part is extracted outside through the columnar part. The light emitting material allows light to be efficiently extracted to the outside to improve luminance.

    摘要翻译: 本发明提供一种发光材料,其中:发光层包括柱状部分,其截面形状为柱状柱状柱,发光部分的截面形状为锥形或金字塔形; 并且在发光部分中产生的光通过柱状部分被提取到外部。 发光材料允许光被有效地提取到外部以提高亮度。

    Compound semiconductor film, light emitting film, and manufacturing method thereof
    8.
    发明授权
    Compound semiconductor film, light emitting film, and manufacturing method thereof 有权
    化合物半导体膜,发光膜及其制造方法

    公开(公告)号:US08097885B2

    公开(公告)日:2012-01-17

    申请号:US12127766

    申请日:2008-05-27

    IPC分类号: H01L29/15

    摘要: Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.

    摘要翻译: 本发明提供一种低温制造且显示出优异的p型导电性的化合物半导体膜,其中化合物半导体膜和发光材料层叠的发光膜,能够实现高强度发光的发光膜 。 化合物半导体膜具有由Cu2-Zn-IV-S4型表示的组成,其中IV是Ge和Si中的至少一种。 发光膜包括按照所述顺序层压在基板上的发光材料和化合物半导体膜。

    Light-emitting film, light-emitting device and production method thereof
    9.
    发明授权
    Light-emitting film, light-emitting device and production method thereof 有权
    发光膜,发光装置及其制造方法

    公开(公告)号:US08084782B2

    公开(公告)日:2011-12-27

    申请号:US12185261

    申请日:2008-08-04

    IPC分类号: H01L29/24

    摘要: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

    摘要翻译: 提供一种具有可控电阻率的发光膜和可以使用这种发光膜在低电压下驱动的高亮度发光装置。 发光膜包含Cu作为添加元素,作为基材的硫化锌化合物,其中硫化锌化合物包括柱状ZnS晶体,ZnS晶体与ZnS晶体接触的晶界上由硫化铜形成的部位 彼此。

    METHOD FOR PRODUCING LIGHT-EMITTING FILM AND LIGHT-EMITTING DEVICE
    10.
    发明申请
    METHOD FOR PRODUCING LIGHT-EMITTING FILM AND LIGHT-EMITTING DEVICE 失效
    用于生产发光膜和发光装置的方法

    公开(公告)号:US20120064654A1

    公开(公告)日:2012-03-15

    申请号:US13297027

    申请日:2011-11-15

    IPC分类号: H01L33/28 H01L33/42

    摘要: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

    摘要翻译: 提供一种具有可控电阻率的发光膜和可以使用这种发光膜在低电压下驱动的高亮度发光装置。 发光膜包含Cu作为添加元素,作为基材的硫化锌化合物,其中硫化锌化合物包括柱状ZnS晶体,ZnS晶体与ZnS晶体接触的晶界上由硫化铜形成的部位 彼此。