Valve timing control apparatus of internal combustion engine
    1.
    发明申请
    Valve timing control apparatus of internal combustion engine 失效
    内燃机气门正时控制装置

    公开(公告)号:US20070101962A1

    公开(公告)日:2007-05-10

    申请号:US11590880

    申请日:2006-11-01

    IPC分类号: F01L1/34

    摘要: A valve timing control apparatus is adapted to an exhaust valve side of an internal combustion engine. A vane member is arranged to rotate with a camshaft relative to a timing sprocket member. The vane member is rotated at low speed engine operation dominantly by a camshaft-torque actuation mechanism and at high speed engine operation dominantly by a hydraulic actuation mechanism. The camshaft-torque actuation mechanism is actuated by an alternating torque of the camshaft, whereas the hydraulic actuation mechanism is actuated by a fluid pump. The vane member includes a first vane arranged to operate in the camshaft-torque actuation mechanism and a second vane arranged to operate in the hydraulic actuation mechanism. The first vane has a shorter radial length and a smaller pressure-receiving area than the second vane.

    摘要翻译: 气门正时控制装置适用于内燃机的排气门侧。 叶片构件布置成与凸轮轴相对于正时链轮构件一起旋转。 叶片构件通过凸轮轴 - 扭矩致动机构主要以低速发动机运转而以高速发动机运转主要由液压致动机构转动。 凸轮轴扭矩致动机构由凸轮轴的交替扭矩致动,而液压致动机构由流体泵致动。 叶片构件包括布置成在凸轮轴 - 扭矩致动机构中操作的第一叶片和布置成在液压致动机构中操作的第二叶片。 第一叶片具有比第二叶片更短的径向长度和更小的压力接收面积。

    Valve timing control apparatus of internal combustion engine
    2.
    发明授权
    Valve timing control apparatus of internal combustion engine 失效
    内燃机气门正时控制装置

    公开(公告)号:US07444254B2

    公开(公告)日:2008-10-28

    申请号:US11590880

    申请日:2006-11-01

    IPC分类号: G01L25/00 F01L1/34

    摘要: A valve timing control apparatus is adapted to an exhaust valve side of an internal combustion engine. A vane member is arranged to rotate with a camshaft relative to a timing sprocket member. The vane member is rotated at low speed engine operation dominantly by a camshaft-torque actuation mechanism and at high speed engine operation dominantly by a hydraulic actuation mechanism. The camshaft-torque actuation mechanism is actuated by an alternating torque of the camshaft, whereas the hydraulic actuation mechanism is actuated by a fluid pump. The vane member includes a first vane arranged to operate in the camshaft-torque actuation mechanism and a second vane arranged to operate in the hydraulic actuation mechanism. The first vane has a shorter radial length and a smaller pressure-receiving area than the second vane.

    摘要翻译: 气门正时控制装置适用于内燃机的排气门侧。 叶片构件布置成与凸轮轴相对于正时链轮构件一起旋转。 叶片构件通过凸轮轴 - 扭矩致动机构主要以低速发动机运转而以高速发动机运转主要由液压致动机构转动。 凸轮轴扭矩致动机构由凸轮轴的交替扭矩致动,而液压致动机构由流体泵致动。 叶片构件包括布置成在凸轮轴 - 扭矩致动机构中操作的第一叶片和布置成在液压致动机构中操作的第二叶片。 第一叶片具有比第二叶片更短的径向长度和更小的压力接收面积。

    Controlled release coat-core tablet
    3.
    发明授权
    Controlled release coat-core tablet 有权
    控释外套芯片

    公开(公告)号:US08968779B2

    公开(公告)日:2015-03-03

    申请号:US13704345

    申请日:2011-06-15

    摘要: Disclosed is a controlled release nucleated tablet which is composed of an inner nucleus and an outer layer that covers the inner nucleus and is capable of maintaining the level of 2-(3-cyano-4-isobutyloxyphenyl)-4-methyl-5-thiazolecarboxylic acid in the blood to a certain value or higher for a long period of time. The controlled release nucleated tablet is characterized in that the inner nucleus contains 2-(3-cyano-4-isobutyloxyphenyl)-4-methyl-5-thiazolecarboxylic acid and the outer layer contains 2-(3-cyano-4-isobutyloxyphenyl)-4-methyl-5-thiazolecarboxylic acid and a gel-forming water-soluble polymer that is in an amount of 16 (w/w) % or more relative to the weight of the outer layer.

    摘要翻译: 公开了一种控制释放有核的片剂,其由内核和覆盖内核的外层组成,并且能够维持2-(3-氰基-4-异丁氧基苯基)-4-甲基-5-噻唑甲酸 血液中的酸长时间达到一定值或更高。 控释片的特征在于内核含有2-(3-氰基-4-异丁氧基苯基)-4-甲基-5-噻唑甲酸,外层含有2-(3-氰基-4-异丁氧基苯基) - 4-甲基-5-噻唑甲酸和相对于外层重量为16(w / w)%以上的凝胶形成性水溶性聚合物。

    Testing device and testing method of semiconductor devices
    4.
    发明授权
    Testing device and testing method of semiconductor devices 有权
    半导体器件的测试装置和测试方法

    公开(公告)号:US08395400B2

    公开(公告)日:2013-03-12

    申请号:US12606609

    申请日:2009-10-27

    申请人: Hideaki Nakamura

    发明人: Hideaki Nakamura

    IPC分类号: G01R31/10

    CPC分类号: G01R31/2874

    摘要: A testing device of semiconductor devices includes a temperature detector detecting temperatures of semiconductor devices, and a temperature control unit controlling the temperatures of the semiconductor devices based on a detected temperature, in which the temperature control unit includes thermal heads cooling or heating the semiconductor devices, solution pipes through which solutions set to different temperatures flow, and a channel switching part switching whether or not to make the solution flow through the thermal head, and when a test is conducted, the solution flown through the thermal head is switched according to heating amount of the semiconductor device.

    摘要翻译: 半导体器件的测试装置包括温度检测器,其检测半导体器件的温度,以及温度控制单元,其基于检测到的温度来控制半导体器件的温度,其中温度控制单元包括热敏头冷却或加热半导体器件, 溶液设置为不同温度的溶液管流动,以及切换是否使溶液流过热敏头的通道切换部分,并且当进行测试时,流过热敏头的溶液根据加热量 的半导体器件。

    MOTOR SPEED CONTROL CIRCUIT
    5.
    发明申请
    MOTOR SPEED CONTROL CIRCUIT 审中-公开
    电机速度控制电路

    公开(公告)号:US20120181966A1

    公开(公告)日:2012-07-19

    申请号:US13349313

    申请日:2012-01-12

    IPC分类号: H02P7/00

    CPC分类号: H02P23/22

    摘要: A motor speed control circuit includes: a first determining circuit configured to determine whether a rotation speed of a motor is higher than a set first rotation speed based on a speed signal corresponding to the rotation speed; a second determining circuit configured to determine whether the rotation speed is higher than a set second rotation speed, which is higher than the first rotation speed, based on the speed signal; and a drive signal output circuit configured to output to a drive circuit configured to drive the motor a drive signal for increasing the rotation speed when the rotation speed is lower than the first rotation speed and decreasing the rotation speed when the rotation speed is higher than the second rotation speed, based on determination results of the first and second determining circuits.

    摘要翻译: 电动机速度控制电路包括:第一确定电路,被配置为基于与所述转速相对应的速度信号来确定电动机的转速是否高于设定的第一转速; 第二确定电路,被配置为基于所述速度信号来确定所述转速是否高于高于所述第一转速的设定的第二转速; 以及驱动信号输出电路,被配置为输出到驱动电路,所述驱动电路被配置为当所述转速低于所述第一转速时驱动所述电动机用于增加转速的驱动信号,并且当所述转速高于所述第一转速时降低所述转速 第二转速,基于第一和第二确定电路的确定结果。

    Modified Ion Exchange Resin and Process for Producing Bisphenols
    8.
    发明申请
    Modified Ion Exchange Resin and Process for Producing Bisphenols 有权
    改性离子交换树脂及其生产方法

    公开(公告)号:US20080051480A1

    公开(公告)日:2008-02-28

    申请号:US11631292

    申请日:2005-06-14

    IPC分类号: C07F9/54 B01J41/12 C07C39/16

    摘要: There is provided a modified ion exchange resin catalyst which exhibits higher bisphenols selectivity than the conventional modified ion exchange resins in processes wherein bisphenols are produced by reacting a phenolic compound with ketones, and to provide such a process for producing bisphenols. A modified ion exchange resin is characterized in that at least one compound selected from (A) and (B) shown below is ionically bonded to an acidic functional group of an acidic ion exchange resin: (A) Compound represented by Formula (1) and (B) Compound represented by Formula (2)

    摘要翻译: 提供了一种改性离子交换树脂催化剂,其在通过使酚类化合物与酮反应制备双酚的方法中表现出比常规改性离子交换树脂更高的双酚选择性,并提供了制备双酚的方法。 改性离子交换树脂的特征在于,选自下述(A)和(B)中的至少一种化合物与酸性离子交换树脂的酸性官能团离子键合:(A)式(1)表示的化合物和 (B)式(2)表示的化合物

    Semiconductor device
    10.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US5495118A

    公开(公告)日:1996-02-27

    申请号:US323939

    申请日:1994-10-17

    摘要: Between an external terminal and the gate of one of output MOSFETs whose source or drain is connected to the external terminal, there is connected a P-channel type first protective MOSFET whose gate is connected to a high voltage side power supply terminal and which has a channel length equal to or larger than that of the output MOSFET, or an N-channel type second protective MOSFET whose gate is connected to a low voltage side power supply terminal and which has a channel length equal to or larger then that of the output MOSFET. When the external terminal is discharged by device charge, one of the protective MOSFETs is turned on, and the charge on the gate side of the output MOSFET can be likewise released by device charge to prevent ESD (Electro-Static Discharge) breakdown.

    摘要翻译: 在外部端子和源极或漏极连接到外部端子的输出MOSFET之一的栅极之间连接有P沟道型第一保护MOSFET,其栅极连接到高压侧电源端子,其具有 沟道长度等于或大于输出MOSFET的沟道长度,或者N沟道型第二保护MOSFET,其栅极连接到低压侧电源端子,并且沟道长度等于或大于输出MOSFET的沟道长度 。 当外部端子通过器件充电放电时,保护MOSFET之一导通,输出MOSFET栅极侧的电荷同样可以通过器件充电来释放,以防止ESD(静电放电)故障。