公开(公告)号：US08492254B2

公开(公告)日：2013-07-23

申请号：US13294169

申请日：2011-11-10

申请人： Tomonori Mizushima

发明人： Tomonori Mizushima

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L29/872 ,  H01L29/66143 ,  H01L29/8725

摘要： A method of manufacturing a semiconductor device is disclosed. The method includes forming a first trench and a second trench in an n-type substrate surface, the first trenches being spaced apart from each other, the second trench surrounding the first trenches, the second trench being wider than the first trench. The method also includes forming a gate oxide film on the inner surfaces of the first and second trenches, and depositing an electrically conductive material to the thickness a half or more as large as the first trench width. The method further includes removing the electrically conductive material using the gate oxide film as a stopper layer, forming an insulator film thicker than the gate oxide film, and polishing the insulator film by CMP for exposing the n-type substrate and the electrically conductive material in the first trench.

摘要翻译： 公开了制造半导体器件的方法。 所述方法包括在n型衬底表面中形成第一沟槽和第二沟槽，所述第一沟槽彼此间隔开，所述第二沟槽围绕所述第一沟槽，所述第二沟槽比所述第一沟槽更宽。 该方法还包括在第一和第二沟槽的内表面上形成栅极氧化膜，并且将导电材料沉积成与第一沟槽宽度一样大的一半或更多的厚度。 该方法还包括使用栅极氧化膜作为阻挡层去除导电材料，形成比栅极氧化膜更厚的绝缘膜，并通过CMP抛光绝缘膜，以将n型衬底和导电材料暴露在 第一个沟槽。

公开(公告)号：US20120122307A1

公开(公告)日：2012-05-17

申请号：US13294169

申请日：2011-11-10

申请人： Tomonori Mizushima

发明人： Tomonori Mizushima

IPC分类号： H01L21/329

CPC分类号： H01L29/872 ,  H01L29/66143 ,  H01L29/8725

摘要： A method of manufacturing a semiconductor device is disclosed. The method includes forming a first trench and a second trench in an n-type substrate surface, the first trenches being spaced apart from each other, the second trench surrounding the first trenches, the second trench being wider than the first trench. The method also includes forming a gate oxide film on the inner surfaces of the first and second trenches, and depositing an electrically conductive material to the thickness a half or more as large as the first trench width. The method further includes removing the electrically conductive material using the gate oxide film as a stopper layer, forming an insulator film thicker than the gate oxide film, and polishing the insulator film by CMP for exposing the n-type substrate and the electrically conductive material in the first trench.

摘要翻译： 公开了制造半导体器件的方法。 所述方法包括在n型衬底表面中形成第一沟槽和第二沟槽，所述第一沟槽彼此间隔开，所述第二沟槽围绕所述第一沟槽，所述第二沟槽比所述第一沟槽更宽。 该方法还包括在第一和第二沟槽的内表面上形成栅极氧化膜，并且将导电材料沉积成与第一沟槽宽度一样大的一半或更多的厚度。 该方法还包括使用栅极氧化膜作为阻挡层去除导电材料，形成比栅极氧化膜更厚的绝缘膜，并通过CMP抛光绝缘膜，以将n型衬底和导电材料暴露在 第一个沟槽。

公开(公告)号：US09570541B2

公开(公告)日：2017-02-14

申请号：US13994424

申请日：2011-12-15

申请人： Tomonori Mizushima

发明人： Tomonori Mizushima

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/66 ,  H01L29/739 ,  H01L21/22 ,  H01L21/265 ,  H01L21/324 ,  H01L29/32 ,  H01L29/861

CPC分类号： H01L29/0619 ,  H01L21/221 ,  H01L21/26506 ,  H01L21/324 ,  H01L29/0615 ,  H01L29/0834 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/8611

摘要： A semiconductor device is disclosed. In a surface layer of a front surface of an n-type semiconductor substrate, an anode layer is provided in an element activation portion and an annular p-type guard ring and an n-type high-concentration surface region are provided in an annular termination breakdown voltage region which surrounds the outer circumference of the anode layer. The impurity concentration of the n-type high-concentration surface region is higher than that of the semiconductor substrate and is lower than that of the p-type guard ring. The depth of the n-type high-concentration surface region is less than that of the guard ring. The anode layer and the guard ring are formed while the oxygen concentration of the semiconductor substrate is set to be equal to or more than 1×1016/cm3 and equal to or less than 1×1018/cm3.

摘要翻译： 公开了一种半导体器件。 在n型半导体衬底的表面的表面层中，阳极层设置在元件激活部分中，环形p型保护环和n型高浓度表面区域设置在环形端子 围绕阳极层的外周的击穿电压区域。 n型高浓度表面区域的杂质浓度高于半导体衬底的杂质浓度，低于p型保护环的杂质浓度。 n型高浓度表面区域的深度小于保护环的深度。 形成阳极层和保护环，同时将半导体基板的氧浓度设定为1×1016 / cm3以上且1×1018 / cm3以下。

公开(公告)号：US20130264674A1

公开(公告)日：2013-10-10

申请号：US13994424

申请日：2011-12-15

申请人： Tomonori Mizushima

发明人： Tomonori Mizushima

IPC分类号： H01L29/06

CPC分类号： H01L29/0619 ,  H01L21/221 ,  H01L21/26506 ,  H01L21/324 ,  H01L29/0615 ,  H01L29/0834 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/8611

摘要： A semiconductor device is disclosed. In a surface layer of a front surface of an n-type semiconductor substrate, an anode layer is provided in an element activation portion and an annular p-type guard ring and an n-type high-concentration surface region are provided in an annular termination breakdown voltage region which surrounds the outer circumference of the anode layer. The impurity concentration of the n-type high-concentration surface region is higher than that of the semiconductor substrate and is lower than that of the p-type guard ring. The depth of the n-type high-concentration surface region is less than that of the guard ring. The anode layer and the guard ring are formed while the oxygen concentration of the semiconductor substrate is set to be equal to or more than 1×1016/cm3 and equal to or less than 1×1018/cm3.

摘要翻译： 公开了一种半导体器件。 在n型半导体衬底的表面的表面层中，阳极层设置在元件激活部分中，环形p型保护环和n型高浓度表面区域设置在环形端子 围绕阳极层的外周的击穿电压区域。 n型高浓度表面区域的杂质浓度高于半导体衬底的杂质浓度，低于p型保护环的杂质浓度。 n型高浓度表面区域的深度小于保护环的深度。 形成阳极层和保护环，同时将半导体基板的氧浓度设定为1×1016 / cm3以上且1×1018 / cm3以下。