知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

29 条记录 (耗时 0.028 秒)

    Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern
    5.
    发明授权
    Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern 有权
    含有相分离结构的结构的制造方法，形成图案的方法和形成精细图案的方法

    公开(公告)号：US09206307B2

    公开(公告)日：2015-12-08

    申请号：US14447376

    申请日：2014-07-30

    申请人： Tokyo Ohka Kogyo Co., Ltd.

    发明人： Tasuku Matsumiya ,  Takehiro Seshimo ,  Ken Miyagi ,  Takaya Maehashi ,  Takahiro Dazai ,  Yoshiyuki Utsumi

    IPC分类号： B05D3/10 ,  B44C1/22 ,  C08L53/00 ,  B82B3/00 ,  C09D153/00 ,  B05D1/18

    CPC分类号： C08L53/00 ,  B05D1/185 ,  B81C1/00031 ,  B81C2201/0149 ,  B82B3/00 ,  C09D153/00

    摘要： A method of producing a structure containing a phase-separated structure, including: forming a layer including a neutralization film on a substrate; forming a layer containing a block copolymer on the layer including the neutralization film, the PA block and PB block being mutually bonded in the block copolymer, and the PB block including a structural unit other than a structural unit constituting the PA block; and subjecting the layer containing the block copolymer to an annealing treatment, such that, in the case where a surface free energy of the PA block, a surface free energy of the PB block and a surface free energy of the neutralization film are represented by a coordinate point A of the PA block, a coordinate point B of the PB block and a coordinate point N of the neutralization film, respectively in the plane of coordinates, the coordinate point N of the neutralization film is within the predetermined range.

    摘要翻译： 一种制造包含相分离结构的结构的方法，包括：在基板上形成包含中和膜的层; 在包含中和膜的层上形成包含嵌段共聚物的层，PA嵌段和PB嵌段相互结合在嵌段共聚物中，PB组分包括构成PA嵌段的结构单元以外的结构单元; 并使含有嵌段共聚物的层进行退火处理，使得在PA嵌段的表面自由能，PB嵌段的表面自由能和中和膜的表面自由能由 PA块的坐标点A，PB块的坐标点B和中和膜的坐标点N分别在坐标平面中，中和膜的坐标点N在预定范围内。

    METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE AND METHOD OF FORMING TOP COAT FILM
    6.
    发明申请
    METHOD OF PRODUCING STRUCTURE CONTAINING PHASE-SEPARATED STRUCTURE AND METHOD OF FORMING TOP COAT FILM 有权
    生产包含相分离结构的结构的方法和形成顶层薄膜的方法

    公开(公告)号：US20150291832A1

    公开(公告)日：2015-10-15

    申请号：US14674515

    申请日：2015-03-31

    申请人： Tokyo Ohka Kogyo Co., Ltd.

    发明人： Takehiro Seshimo ,  Takaya Maehashi ,  Takahiro Dazai ,  Yoshiyuki Utsumi

    IPC分类号： C09D153/00

    CPC分类号： C09D153/00 ,  B82Y40/00 ,  C09D183/00 ,  G03F7/0002 ,  G03F7/11

    摘要： A method of producing a structure containing a phase-separated structure, including forming a layer containing a block copolymer on a substrate; applying a top coat material to the layer containing the block copolymer to form a top coat film; and subjecting the layer including the block copolymer having the top coat film formed thereon to annealing treatment so as to conduct a phase separation of the layer, the top coat material including an organic solvent component and a polymeric compound containing a structural unit having either a dicarboxylic acid or a salt of a dicarboxylic acid, and the organic solvent component containing water and an alcohol having 3 or more carbon atoms.

    摘要翻译： 一种制备包含相分离结构的结构的方法，包括在基材上形成含有嵌段共聚物的层; 将面漆材料涂布在含有嵌段共聚物的层上以形成顶涂膜; 对包含形成在其上的顶涂层的嵌段共聚物层进行退火处理，以使层的相分离，包括有机溶剂组分的顶涂层材料和含有具有二羧酸的结构单元的高分子化合物 酸或二羧酸的盐，以及含有水和具有3个或更多个碳原子的醇的有机溶剂组分。

    Pattern forming method
    9.
    发明授权
    Pattern forming method 有权

    公开(公告)号：US10366888B2

    公开(公告)日：2019-07-30

    申请号：US16008392

    申请日：2018-06-14

    申请人： Tokyo Electron Limited ,  TOKYO OHKA KOGYO CO., LTD.

    发明人： Kazuki Yamada ,  Masatoshi Yamato ,  Hidetami Yaegashi ,  Yoshitaka Komuro ,  Takehiro Seshimo ,  Katsumi Ohmori

    IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311

    摘要： A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.