公开(公告)号：US20240120183A1

公开(公告)日：2024-04-11

申请号：US18263920

申请日：2022-01-24

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Ryota IFUKU ,  Takashi MATSUMOTO ,  Hiroki YAMADA

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/455 ,  C23C16/511 ,  C23C16/52 ,  H01L21/02

CPC classification number: H01J37/32816 ,  C23C16/26 ,  C23C16/45557 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32743 ,  H01L21/02115 ,  H01L21/02274 ,  H01J37/32192 ,  H01J2237/182 ,  H01J2237/332

Abstract: A substrate processing method of processing a substrate includes: a carry-in process of carrying the substrate into a processing container; a first process of forming a first carbon film on the substrate with plasma of a first mixture gas containing a carbon-containing gas in a state in which interior of the processing container is maintained at a first pressure; and a second process of changing a pressure in the processing container to a second pressure higher than the first pressure.

公开(公告)号：US20230167547A1

公开(公告)日：2023-06-01

申请号：US17997410

申请日：2021-04-16

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Makoto WADA

IPC: C23C16/44 ,  C23C16/26 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/4404 ,  C23C16/26 ,  C23C16/50 ,  H01J37/32449 ,  H01J37/32495 ,  H01J2237/3323

Abstract: A method of pre-coating a carbon film by plasma in a processing container, includes: pre-coating an inner wall of the processing container with a first carbon film by plasma of a first carbon-containing gas under a first pressure; and processing the first carbon film with the plasma under a second pressure.

公开(公告)号：US20220316065A1

公开(公告)日：2022-10-06

申请号：US17636808

申请日：2020-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Ryota IFUKU ,  Hirokazu UEDA

IPC: C23C16/511 ,  H01J37/32 ,  C23C16/27 ,  C23C16/455

Abstract: There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.

公开(公告)号：US20230080956A1

公开(公告)日：2023-03-16

申请号：US17931930

申请日：2022-09-14

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Ryota IFUKU ,  Hiroki YAMADA ,  Haruhiko FURUYA

IPC: H01L21/3205 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677

Abstract: A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.

公开(公告)号：US20230061151A1

公开(公告)日：2023-03-02

申请号：US17820929

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Hideki YUASA ,  Hiroyuki IKUTA ,  Yutaka FUJINO ,  Makoto WADA ,  Hirokazu UEDA

IPC: C23C16/56 ,  C23C16/34

Abstract: A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.

公开(公告)号：US20210164103A1

公开(公告)日：2021-06-03

申请号：US17106521

申请日：2020-11-30

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Takashi MATSUMOTO ,  Masahito SUGIURA ,  Makoto WADA

IPC: C23C16/511 ,  H01L21/02 ,  H01J37/32 ,  C23C16/26 ,  C23C16/44

Abstract: There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.

公开(公告)号：US20230420294A1

公开(公告)日：2023-12-28

申请号：US18252408

申请日：2021-11-02

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Nobutake KABUKI ,  Ryota IFUKU ,  Takashi MATSUMOTO

IPC: H01L21/768 ,  H01L21/02 ,  H01J37/32 ,  C23C16/458 ,  C23C16/02 ,  C23C16/26 ,  C23C16/50 ,  C01B32/186

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01J37/32715 ,  C23C16/4583 ,  C23C16/02 ,  C23C16/26 ,  C23C16/50 ,  C01B32/186 ,  H01J2237/20235 ,  H01J2237/334

Abstract: A substrate processing method of processing a substrate having a base film includes a loading process of loading the substrate into a processing container, a first process of performing a first plasma process in a state where the loaded substrate is held at a first position by raising substrate support pins of a stage arranged in the processing container, and a second process of performing a second plasma process while holding the substrate at a second position by lowering the substrate support pins.

公开(公告)号：US20230042099A1

公开(公告)日：2023-02-09

申请号：US17757906

申请日：2020-11-26

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Takashi MATSUMOTO ,  Nobutake KABUKI ,  Ryota IFUKU ,  Masahito SUGIURA ,  Hirokazu UEDA

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/768 ,  H01L21/285 ,  C23C16/26 ,  C23C16/511 ,  C01B32/186

Abstract: A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

公开(公告)号：US20230102051A1

公开(公告)日：2023-03-30

申请号：US17935594

申请日：2022-09-27

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Makoto WADA ,  Nobutake KABUKI ,  Takashi MATSUMOTO ,  Hiroshi TERADA ,  Genji NAKAMURA

IPC: C23C16/26 ,  C23C16/02 ,  C23C16/44 ,  C23C16/513

Abstract: A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

公开(公告)号：US20230062105A1

公开(公告)日：2023-03-02

申请号：US17820962

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Yutaka FUJINO ,  Hiroyuki IKUTA ,  Hideki YUASA ,  Hirokazu UEDA

IPC: C23C16/44 ,  C23C16/511 ,  C23C16/34 ,  H01J37/32

Abstract: A film forming method includes repeatedly performing: forming a film on one substrate or consecutively on a plurality of substrates by supplying a film formation gas into a processing container while heating the substrate on a stage; cleaning an interior of the processing container by a fluorine-containing gas by setting a temperature of the stage to a first temperature at which a vapor pressure of an aluminum fluoride becomes lower than a control pressure in the processing container in a state in which the substrate is unloaded from the processing container; and performing a precoating continuously to the cleaning the interior of the processing container such that a precoat film is formed on at least a surface of the stage by setting the temperature of the stage to a second temperature at which the vapor pressure of the aluminum fluoride becomes lower than the control pressure in the processing container.